A method includes forming a first through-via from a first conductive pad of a first device die, and forming a second through-via from a second conductive pad of a second device die. The first and second conductive pads are at top surfaces of the first and the second device dies, respectively. The first and the second conductive pads may be used as seed layers. The second device die is adhered to the top surface of the first device die. The method further includes encapsulating the first and the second device dies and the first and the second through-vias in an encapsulating material, with the first and the second device dies and the first and the second through-vias encapsulated in a same encapsulating process. The encapsulating material is planarized to reveal the first and the second through-vias. Redistribution lines are formed to electrically couple to the first and the second through-vias.

A semiconductor module includes a power element, a signal wiring, and a heat sink. The signal wiring is connected to a signal pad of the power element. The heat sink cools the power element. The power element has an active area provided by a portion where the signal pad is formed. The signal pad is thermally connected to the heat sink via the signal wiring.

The disclosure describes to techniques for detecting field failures or performance degradation of circuits, including integrated circuits (IC), by including additional contacts, i.e. terminals, along with the functional contacts that used for connecting the circuit to a system in which the circuit is a part. These additional contacts may be used to measure dynamic changing electrical characteristics over time e.g. voltage, current, temperature and impedance. These electrical characteristics may be representative of a certain failure mode and may be an indicator for circuit state-of-health (SOH), while the circuit is performing in the field.

An in-line power device, a semiconductor assembly, an in-wheel motor driver or a vehicle driver, and a new-energy vehicle are provided. The in-line power device includes: a body including a power chip and a wrapping layer wrapping an outer surface of the power chip; and a plurality of pins provided at a first side of the body at intervals. The plurality of pins includes a power pin, an auxiliary control pin and a control signal pin, and each pin includes a first segment provided inside the wrapping layer and a second segment provided outside the wrapping layer. The second segment of the auxiliary control pin and the second segment of the control signal pin are located in a first plane, the second segment of the power pin and the first side are located in a second plane, and the first plane is not parallel to the second plane.

The present invention provides a package structure and a method for manufacturing the same. The package structure includes at least two electrical elements, a second reconstruction layer, and a metal lead frame, wherein at least one of the electrical elements is a chip, at least one of the electrical elements has a first reconstruction layer, and the second reconstruction layer has a smaller pin pitch than that of the metal lead frame; the second reconstruction layer has a first surface and a second surface, a functional surface of the electrical element is disposed on and connected to the first surface, and at least one of the electrical elements is connected to the second reconstruction layer; and the second surface is disposed on and connected to the metal lead frame. A fan-out package structure is formed on the metal lead frame, which improves the heat dissipation capacity of the chip.

A semiconductor package is provided. The semiconductor package includes: a package substrate; a first semiconductor chip mounted on the package substrate; a second semiconductor chip mounted on the package substrate; an adhesive film provided on an upper surface the first semiconductor chip and an upper surface of the second semiconductor chip; and a third semiconductor chip attached to the first semiconductor chip, the second semiconductor chip by the adhesive film. The first and second semiconductor chips have different heights, and a thickness of the adhesive film at a portion thereof contacting the first semiconductor chip is different from a thickness of the adhesive film at a portion thereof contacting the second semiconductor chip.

Provided is a semiconductor device including: a lead frame having an upper surface provided with a concave portion and a lower surface provided with a convex portion; a semiconductor chip fixed to the upper surface of the lead frame; a solder layer provided in the concave portion and fixing the semiconductor chip to the upper surface of the lead frame; and a sealing resin for sealing the semiconductor chip and the lead frame. A thickness of the solder layer is larger than a depth of the concave portion. The sealing resin covers at least a part of the lower surface of the lead frame. At least a part of the convex portion of the lead frame is exposed from the sealing resin.

In some examples, a package comprises a semiconductor die having a first surface and a second surface opposing the first surface, the semiconductor die including circuitry formed in the first surface. The package includes an acoustic waveguide in the semiconductor die, the acoustic waveguide including an array of capacitors. The array of capacitors includes a transducer portion and a diffraction grating portion. The transducer portion is configured to convert signals between electrical signals and acoustic waves, and the diffraction grating portion is configured to direct the acoustic waves toward and receive the acoustic waves from the second surface.

An apparatus is provided which comprises: a plurality of nanowire transistors stacked vertically, wherein each nanowire transistor of the plurality of nanowire transistors comprises a corresponding nanowire of a plurality of nanowires; and a gate stack, wherein the gate stack fully encircles at least a section of each nanowire of the plurality of nanowires.

A microelectronic device, in a fan-out fan-in chip scale package, has a die and an encapsulation material at least partially surrounding the die. Fan-out connections from the die extend through the encapsulation material and terminate adjacent to the die. The fan-out connections include wire bonds, and are free of photolithographically-defined structures. Fan-in/out traces connect the fan-out connections to bump bond pads. The die and at least a portion of the bump bond pads partially overlap each other. The microelectronic device is formed by mounting the die on a carrier, and forming the fan-out connections, including the wire bonds, without using a photolithographic process. The die and the fan-out connections are covered with an encapsulation material, and the carrier is subsequently removed, exposing the fan-out connections. The fan-in/out traces are formed so as to connect to the exposed portions of the fan-out connections, and extend to the bump bond pads.