A semiconductor device assembly including a substrate, a semiconductor device, a stiffener member, and mold compound. The stiffener member is tuned, or configured, to reduce and/or control the shape of warpage of the semiconductor device assembly at an elevated temperature. The stiffener member may be placed on the substrate, on the semiconductor device, and/or on the mold compound. A plurality of stiffener members may be used. The stiffener members may be positioned in a predetermined pattern on a component of the semiconductor device assembly. A stiffener member may be used so that the warpage of a first semiconductor device substantially corresponds to the warpage of a second semiconductor device at an elevated temperature. The stiffener member may be tuned by providing the member with a desired coefficient of thermal expansion (CTE). The desired CTE may be based on the individual CTEs of the components of a semiconductor device assembly.

A semiconductor device assembly including a substrate, a semiconductor device, a stiffener member, and mold compound. The stiffener member is tuned, or configured, to reduce and/or control the shape of warpage of the semiconductor device assembly at an elevated temperature. The stiffener member may be placed on the substrate, on the semiconductor device, and/or on the mold compound. A plurality of stiffener members may be used. The stiffener members may be positioned in a predetermined pattern on a component of the semiconductor device assembly. A stiffener member may be used so that the warpage of a first semiconductor device substantially corresponds to the warpage of a second semiconductor device at an elevated temperature. The stiffener member may be tuned by providing the member with a desired coefficient of thermal expansion (CTE). The desired CTE may be based on the individual CTEs of the components of a semiconductor device assembly.

Alternating electric fields (e.g., TTFields) may be applied to a subject's body using one or more electrode assemblies that includes a sheet of graphite, at least one layer of conductive material disposed on the front face of the sheet of graphite, and an electrode element positioned behind the sheet of graphite. The electrode element has a front face disposed in electrical contact with the rear face of the sheet of graphite. The sheet of graphite spreads both heat and current out in directions that are parallel to the front face of the sheet, which eliminates or at least minimizes hot spots on the electrode assembly. This in turn makes it possible to increase the current without exceeding a temperature safety threshold (e.g., 41° C.).

A method for producing a 3D semiconductor device: providing a first level with a first single crystal layer; forming control circuitry of first transistors in and/or on the first level with a first metal layer above; forming a second metal layer above the first metal layer; forming a third metal layer above the second metal layer; forming at least one second level on top of or above the third metal layer; performing additional processing steps to form a plurality of second transistors within the second level; forming a fourth and fifth metal layers above second level; a global power distribution grid includes fifth metal, and local power distribution grid includes the second metal layer, where the fifth metal layer thickness is at least 50% greater than the second metal layer thickness.

A method of manufacturing a semiconductor device, the method including: preparing an insulated circuit substrate including a conductive plate; partially fixing a plate-like bonding member onto the conductive plate so as to make a positioning of the bonding member in a horizontal direction; mounting a semiconductor chip on the bonding member; and heating and melting the bonding member so as to form a bonding layer for bonding the insulated circuit substrate and the semiconductor chip each other.

Semiconductor device assemblies are provided with a package substrate including one or more layers of thermally conductive material configured to conduct heat generated by one or more of semiconductor dies of the assemblies laterally outward towards an outer edge of the assembly. The layer of thermally conductive material can comprise one or more allotropes of carbon, such as diamond, graphene, graphite, carbon nanotubes, or a combination thereof. The layer of thermally conductive material can be provided via deposition (e.g., sputtering, PVD, CVD, or ALD), via adhering a film comprising the layer of thermally conductive material to an outer surface of the package substrate, or via embedding a film comprising the layer of thermally conductive material to within the package substrate.

Semiconductor device assemblies are provided with a package substrate including one or more layers of thermally conductive material configured to conduct heat generated by one or more of semiconductor dies of the assemblies laterally outward towards an outer edge of the assembly. The layer of thermally conductive material can comprise one or more allotropes of carbon, such as diamond, graphene, graphite, carbon nanotubes, or a combination thereof. The layer of thermally conductive material can be provided via deposition (e.g., sputtering, PVD, CVD, or ALD), via adhering a film comprising the layer of thermally conductive material to an outer surface of the package substrate, or via embedding a film comprising the layer of thermally conductive material to within the package substrate.

A semiconductor package of the present invention comprises a base plate, an insulating substrate, and a lead frame, wherein the base plate is made of a metallic material including Cu and Be—Cu. The present invention can ensure bonding reliability and thus prevent performance degradation of semiconductor devices.

Stacked semiconductor die assemblies with multiple thermal paths and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a plurality of first semiconductor dies arranged in a stack and a second semiconductor die carrying the first semiconductor dies. The second semiconductor die can include a peripheral portion that extends laterally outward beyond at least one side of the first semiconductor dies. The semiconductor die assembly can further include a thermal transfer feature at the peripheral portion of the second semiconductor die. The first semiconductor dies can define a first thermal path, and the thermal transfer feature can define a second thermal path separate from the first semiconductor dies.

A semiconductor device includes a semiconductor element, a base plate, and a plurality of contact materials. The base plate has a front surface holding the semiconductor element and a rear surface to which a cooling body to cool the semiconductor element is attachable. The plurality of contact materials are discretely arranged on the rear surface of the base plate. The plurality of contact materials are materials for bridging a gap on a heat dissipation path between the base plate and the cooling body. The plurality of contact materials each have a volume based on a bowed shape of the rear surface of the base plate. From among the plurality of contact materials, a contact material at a concave of the bowed shape has a greater volume than a contact material at a convex of the bowed shape.