A monolithic substrate including a silica material fused to bulk copper is provided for coupling with electronic components, along with methods for making the same. The method includes arranging a base mixture in a die mold. The base mixture includes a bottom portion with copper micron powder and an upper portion with copper nanoparticles. The method includes arranging a secondary mixture on the upper portion of the base mixture. The secondary mixture includes a bottom portion with silica-coated copper nanoparticles and an upper portion with silica nanoparticles. The method includes heating and compressing the base mixture and the secondary mixture in the die mold at a temperature, pressure, and time sufficient to sinter and fuse the base mixture with the secondary mixture to form a monolithic substrate. The resulting monolithic substrate defines a first major surface providing thermal conductivity, and a second major surface providing an electrically resistive surface.

The invention relates to a device (2) for transferring heat from a thermally conductive plate (3) capable of capturing the heat from a zone placed on a first side (32) of the plate, the device comprising at least one fin (35) placed on a second side (34) of the plate (30) opposite the first side (32) and having a duct (36) extending in a longitudinal direction (L) between a first end (38) connected to the plate and a second end (4) opposite the first end and which opens out, the duct (36) being connected to at least one Venturi-effect neck (42) bringing cooling air into the duct, the neck (42) being formed in the vicinity of the first end of the duct and the plate (30).

A method includes forming a release film over a carrier, attaching a device over the release film through a die-attach film, encapsulating the device in an encapsulating material, performing a planarization on the encapsulating material to expose the device, detaching the device and the encapsulating material from the carrier, etching the die-attach film to expose a back surface of the device, and applying a thermal conductive material on the back surface of the device.

A thermally conductive sheet has a thermally conductive resin composition layer, wherein the thermally conductive resin composition layer is made of a thermally conductive resin composition (1) including an inorganic filler and a binder resin (3). The inorganic filler includes a boron nitride particle (2), the content of the inorganic filler in the thermally conductive resin composition layer is 65% by volume or more, and the boron nitride particle (2) has an average aspect ratio of 7 or less, which is calculated from a major axis and a minor axis of a primary particle measured by a specific method. The thermally conductive resin composition layer has a thickness of 200 μm or less.

A thermal interface layer includes pluralities of first and second particles dispersed in a polymeric binder at a total loading V in a range of about 40 volume percent to about 70 volume percent. The first and second particles have different compositions. The first particles include one or more of iron or nickel. The second particles include one or more of aluminum, magnesium, silicon, copper, or zinc. The thermal interface layer has a thermal conductivity in a thickness direction of the thermal interface layer in units of W/mK of at least K=5.1−0.17 V+0.002 V.sup.2.

A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first semiconductor die, a second semiconductor die, a molding compound, a heat dissipation module and an adhesive material. The first and second semiconductor dies are different types of dies and are disposed side by side. The molding compound encloses the first and second semiconductor dies. The heat dissipation module is located directly on and in contact with the back sides of the first and second semiconductor dies. The adhesive material is filled and contacted between the heat dissipation module and the molding compound. The semiconductor package has a central region and a peripheral region surrounding the central region. The first and second semiconductor dies are located within the central region. A sidewall of the heat dissipation module, a sidewall of the adhesive material and a sidewall of the molding compound are substantially coplanar.

A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first semiconductor die, a second semiconductor die, a molding compound, a heat dissipation module and an adhesive material. The first and second semiconductor dies are different types of dies and are disposed side by side. The molding compound encloses the first and second semiconductor dies. The heat dissipation module is located directly on and in contact with the back sides of the first and second semiconductor dies. The adhesive material is filled and contacted between the heat dissipation module and the molding compound. The semiconductor package has a central region and a peripheral region surrounding the central region. The first and second semiconductor dies are located within the central region. A sidewall of the heat dissipation module, a sidewall of the adhesive material and a sidewall of the molding compound are substantially coplanar.

The present invention relates to a thermal interface material layer and use thereof. The thermal interface material layer comprises an indium layer and a heat dissipation cover located on one side of the indium layer; the surface of the heat dissipation cover contains a nickel layer, and the nickel layer is connected to the indium layer. In the thermal interface material layer of the present invention, the nickel layer on the surface of the heat dissipation cover is connected to the indium layer, so as to form a Ni—In compound layer having high structure stability, thereby solving the problem that the AuIn.sub.2 compound layer formed by welding the indium layer and Au used as a wetting layer in the traditional thermal interface layer is easily fractured, improving the reliability of the assembly obtained by assembling same.

A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of ≥50 W/mK.

A semiconductor package including a lid having one or more heat pipes located on and/or within the lid to provide improved thermal management. A lid for a semiconductor package having one or more heat pipes thermally integrated with the lid may provide more uniform heat loss from the semiconductor package, reduce the risk of damage to the package due to excessive heat accumulation, and may enable the lid to be fabricated using less expensive materials, thereby reducing the costs of a semiconductor package.