A thermal interface structure for facilitating heat transfer from an integrated circuit device to a heat dissipation device may be fabricated to include at least one conductive wire structure wherein each conductive wire structure includes a conductive wire having a first end, a first barrier layer adjacent the first end of the conductive wire, and a first solder structure adjacent the first barrier layer. The thermal interface structure may further include an encapsulation material substantially encapsulating each conductive wire structure and a first solder layer abutting the encapsulation material and abutting the first solder structure of each conductive wire structure.

A thermal interface structure for facilitating heat transfer from an integrated circuit device to a heat dissipation device may be fabricated to include at least one conductive wire structure wherein each conductive wire structure includes a conductive wire having a first end, a first barrier layer adjacent the first end of the conductive wire, and a first solder structure adjacent the first barrier layer. The thermal interface structure may further include an encapsulation material substantially encapsulating each conductive wire structure and a first solder layer abutting the encapsulation material and abutting the first solder structure of each conductive wire structure.

A semiconductor package includes a first substrate including a first recess formed in a top surface of the first substrate, a first semiconductor chip disposed in the first recess and mounted on the first substrate, an interposer substrate disposed on the first semiconductor chip and including a second recess formed in a bottom surface of the interposer substrate, an adhesive layer disposed in the second recess and in contact with a top surface of the first semiconductor chip, a plurality of connection terminals spaced apart from the first recess and connecting the first substrate to the interposer substrate, and a molding layer disposed between the first substrate and the interposer substrate.

A semiconductor package includes a package substrate, a semiconductor chip on the package substrate, a heat dissipation structure on the package substrate, the heat dissipation structure including a center portion and an edge portion, a dam structure on a bottom surface of the center portion of the heat dissipation structure, the dam structure on a top surface of the semiconductor chip, and a heat conductive layer between the center portion of the heat dissipation structure and the semiconductor chip. A top surface of the dam structure is located at a same distance from a top surface of the package substrate in a vertical direction as a top surface of the heat conductive layer, wherein the vertical direction is perpendicular to the top surface of the package substrate.

A semiconductor package includes a package substrate, a semiconductor chip on the package substrate, a heat dissipation structure on the package substrate, the heat dissipation structure including a center portion and an edge portion, a dam structure on a bottom surface of the center portion of the heat dissipation structure, the dam structure on a top surface of the semiconductor chip, and a heat conductive layer between the center portion of the heat dissipation structure and the semiconductor chip. A top surface of the dam structure is located at a same distance from a top surface of the package substrate in a vertical direction as a top surface of the heat conductive layer, wherein the vertical direction is perpendicular to the top surface of the package substrate.

Semiconductor devices including electrically-isolated extensions and associated systems and methods are disclosed herein. An electrically-isolated extension may be coupled to a corresponding connection pad that is attached to a surface of a device. The electrically-isolated extensions may extend at least partially through one or more layers at or near the surface and toward a substrate or an inner portion thereof.

In a described example, an apparatus includes: a package substrate having a die mount surface; semiconductor die flip chip mounted to the package substrate on the die mount surface, the semiconductor die having post connects having proximate ends on bond pads on an active surface of the semiconductor die, and extending to distal ends away from the active surface of the semiconductor die and connected to the package substrate by solder joints; a thermal interposer comprising a thermally conductive material positioned over and in thermal contact with a backside surface of the semiconductor die; and mold compound covering a portion of the package substrate, a portion of the thermal interposer, the semiconductor die, and the post connects, the thermal interposer having a surface exposed from the mold compound.

A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a substrate, a semiconductor device, an encapsulant, a balance structure, and a warpage-resistant layer. The semiconductor device is disposed on the substrate. The encapsulant encapsulates the semiconductor device. The balance structure is on the semiconductor device and contacting the encapsulant. The warpage-resistant layer is between the semiconductor device and the balance structure. The encapsulant contacts a lateral surface of the warpage-resistant layer.

A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a substrate, a semiconductor device, an encapsulant, a balance structure, and a warpage-resistant layer. The semiconductor device is disposed on the substrate. The encapsulant encapsulates the semiconductor device. The balance structure is on the semiconductor device and contacting the encapsulant. The warpage-resistant layer is between the semiconductor device and the balance structure. The encapsulant contacts a lateral surface of the warpage-resistant layer.

An electronic device includes a chip package module which includes a chip carrier substrate, a chip, a thermal conductive unit, and an encapsulant laver. The chip is electrically connected to the chip carrier substrate. The thermal conductive unit has a first thermal conductive surface connected to the chip, and a second thermal conductive surface opposite to the first thermal conductive surface. The thermal conductive unit has a thermal conductivity greater than that of the chip. The encapsulant layer covers the chip and partially covers the thermal conductive unit in such a manner that the second thermal conductive surface is exposed from the encapsulant layer.