A semiconductor module may include a plurality of semiconductor elements; and a first power terminal, a second power terminal and a third power terminal electrically connected to the plurality of semiconductor elements. The plurality of semiconductor elements may include at least one upper arm switching element electrically connected between the first power terminal and the second power terminal; and at least one lower arm switching element electrically connected between the second power terminal and the third power terminal. A number of the at least one upper arm switching element may be different from a number of the at least one lower arm switching element.

Systems and methods for utilizing the dead space around the periphery of a chip for sealing a direct liquid cooled module are disclosed. One of the functions of a direct liquid cooled module is to provide cooling liquid to components located on a chip. A groove member for receiving a sealing member may be applied to the top surface of the chip. The groove member may be directly deposited to the top surface or coupled thereto via an adhesive and/or epoxy. The groove member may be in the form of opposing sidewalls or a u-shaped structure each of which form a partial enclosure for receipt of the sealing member. The groove member may be located entirely within the dead space or at least partially within the dead space and partially within a central area in which the chip components are located. The sealing member may be an O-ring or a gasket.

Systems and methods for utilizing the dead space around the periphery of a chip for sealing a direct liquid cooled module are disclosed. One of the functions of a direct liquid cooled module is to provide cooling liquid to components located on a chip. A groove member for receiving a sealing member may be applied to the top surface of the chip. The groove member may be directly deposited to the top surface or coupled thereto via an adhesive and/or epoxy. The groove member may be in the form of opposing sidewalls or a u-shaped structure each of which form a partial enclosure for receipt of the sealing member. The groove member may be located entirely within the dead space or at least partially within the dead space and partially within a central area in which the chip components are located. The sealing member may be an O-ring or a gasket.

A thermal bridge includes an upper bridge assembly including upper plates arranged in an upper plate stack and a lower bridge assembly including lower plates arranged in a lower plate stack. The thermal bridge includes upper spring elements extending from upper plates having upper mating interfaces engaging lower plates to bias the upper plates in a first biasing direction generally away from the lower bridge assembly. The thermal bridge includes lower spring elements extending from lower plates having lower mating interfaces engaging upper plates to bias the lower plates in a second biasing direction generally away from the upper bridge assembly. A bridge frame having connecting elements extends through the upper plates and the lower plates to hold the upper plates in the upper plate stack and to hold the lower plates in the lower plate stack.

A semiconductor package includes: a substrate; a first semiconductor chip disposed on the substrate; a capacitor disposed on the substrate and spaced apart from the first semiconductor chip in a first direction; an insulating layer disposed on the substrate and covering the capacitor; a first heat conductive layer at least partially surrounding side walls of the first semiconductor chip and disposed on the insulating layer, wherein the first heat conductive layer is in contact with the side walls of the first semiconductor chip, and wherein the first heat conductive layer includes a first material that is a conductive material; and a second heat conductive layer disposed on the first heat conductive layer, wherein the second heat conductive layer is in contact with the first heat conductive layer, wherein the second heat conductive layer includes a second material that is a non-conductive material.

A method of manufacturing a semiconductor device includes: adhering together a heat generating body and a heat dissipating body via a thermally conductive sheet by applying a pressure on the heat generating body and the heat dissipating body in a thickness direction of the thermally conductive sheet with the thermally conductive sheet disposed therebetween, the thermally conductive sheet having a compression modulus of 1.40 MPa or less under a compressive stress of 0.10 MPa at 150° C., and a tack strength of 5.0 N.Math.mm or more at 25° C.

A method of manufacturing a semiconductor device includes adhering together a heat dissipating body and a plurality of heat generating bodies via a thermally conductive sheet, by applying pressure to the heat dissipating body and the plurality of heat generating bodies in a thickness direction of the thermally conductive sheet with the thermally conductive sheet disposed therebetween, the thermally conductive sheet having a compression modulus of 1.40 MPa or less under a compressive stress of 0.10 MPa at 150° C.

A semiconductor package is provided. The semiconductor package includes a package substrate, an interposer including a lower protective layer, conductive connectors connecting the package substrate to the interposer, a semiconductor chip arranged between the package substrate and the interposer, and cooling patches arranged between the semiconductor chip and the interposer and having cylindrical shapes, wherein each of the cooling patches includes the same material as each of the conductive connectors, a height of each of the cooling patches is less than or equal to a diameter of each of the cooling patches, and thermal conductivity of each of the cooling patches is greater than thermal conductivity of the lower protective layer.

A semiconductor device assembly includes a cooling system, a plurality of semiconductor packages, each including a semiconductor die and an encapsulant body, and a multi-device thermal interface interposed between the plurality of semiconductor packages and the cooling system, wherein the semiconductor packages are each configured as surface mount devices, and wherein the multi-device thermal interface thermally couples each of the semiconductor packages to the cooling system.

A package structure includes a first dielectric layer, semiconductor device(s) attached to the first dielectric layer, and an embedding material applied to the first dielectric layer so as to embed the semiconductor device therein, the embedding material comprising one or more additional dielectric layers. Vias are formed through the first dielectric layer to the at least one semiconductor device, with metal interconnects formed in the vias to form electrical interconnections to the semiconductor device. Input/output (I/O) connections are located on one end of the package structure on one or more outward facing surfaces thereof to provide a second level connection to an external circuit. The package structure interfits with a connector on the external circuit to mount the package perpendicular to the external circuit, with the I/O connections being electrically connected to the connector to form the second level connection to the external circuit.