A sealed container having gloves attached thereto is provided as part of a physical properties measuring system (PPMS). The PPMS includes a sealed pressurized portion that is pressurized with a gas to purge out air from inside the sealed pressurized portion to reduce water vapor inside the sealed pressurized portion below a water vapor threshold. The system further includes a cryogenic tank having a cryostat disposed therein. The cryogenic tank contains a cryogenic liquid cooled to a cryogenic temperature. Test samples are placed inside the sealed pressurized portion in preparation of measuring physical properties of the test samples. One of the test samples is immersed in the cryogenic liquid to measure the physical properties. The test sample is removed from the cryogenic liquid and is exchanged for another test sample inside the sealed pressurized portion to prevent ice formation inside the cryostat.

A data center is cooled by a cryogenic cooling system which is wind driven, and powered by energy stored in the cryogenic liquid. The cooling occurs through downwardly passing cryogenic liquid which is recycled and pushed back to a top of a system in a cyclic manner.

Superconducting computing system housed in a liquid hydrogen environment and related aspects are described. An example superconducting computing system includes a housing, arranged inside a liquid hydrogen environment, where a lower pressure is maintained inside the housing than a pressure outside the housing. The superconducting computing system further includes a substrate, arranged inside the housing, having a surface, where a plurality of components attached to the surface is configured to provide at least one of a computing or a storage functionality, and the substrate further comprises a plurality of circuit traces for interconnecting at least a subset of the plurality of the components. The housing is configured such that each of the plurality of components is configured to operate at a first temperature, where the first temperature is below 4.2 Kelvin, despite the liquid hydrogen environment having a second temperature greater than 4.2 Kelvin.

A semiconductor package includes a semiconductor chip including at least one vertical hole that penetrates therethrough in a vertical direction, and a mold covering the semiconductor chip, and including at least one first horizontal hole and at least one second horizontal hole that are formed in a horizontal direction, wherein the first horizontal hole and the second horizontal hole are connected through the vertical hole.

In an embodiment, a quantum device includes an interposer layer comprising a set of vias. In an embodiment, the quantum device includes a dielectric layer formed on a first side of the interposer, the dielectric layer including a set of transmission lines communicatively coupled to the set of vias. In an embodiment, the quantum device includes a plurality of qubit chips coupled to an opposite side of the interposer layer, each qubit chip of the plurality of qubit chips including: a plurality of qubits on a first side of the qubit chip and a plurality of protrusions on a second side of the qubit chip. In an embodiment, the quantum device includes a heat sink thermally coupled with the plurality of qubit chips, the heat sink comprising a plurality of recesses aligned with the plurality of protrusions of the plurality of qubit chips.

In an embodiment, a quantum device includes an interposer layer comprising a set of vias. In an embodiment, the quantum device includes a dielectric layer formed on a first side of the interposer, the dielectric layer including a set of transmission lines communicatively coupled to the set of vias. In an embodiment, the quantum device includes a plurality of qubit chips coupled to an opposite side of the interposer layer, each qubit chip of the plurality of qubit chips including: a plurality of qubits on a first side of the qubit chip and a plurality of protrusions on a second side of the qubit chip. In an embodiment, the quantum device includes a heat sink thermally coupled with the plurality of qubit chips, the heat sink comprising a plurality of recesses aligned with the plurality of protrusions of the plurality of qubit chips.

A memory system includes a voltage generator disposed in a high temperature region, and suitable for generating a first voltage; a memory disposed in a low temperature region, and suitable for using a second voltage; and a voltage converter disposed between the high temperature region and the low temperature region, suitable for converting the first voltage into the second voltage, and including a core made from a material having lower heat conductivity than a metal.

A system includes a storage tank storing gas. The storage tank includes a storage tank interface portion made from a first material. The system also includes a nozzle that includes a nozzle interface portion and a first portion. The first portion is made from a second material different from the first material. Additionally, the system includes a connection formed by coupling the storage tank interface portion and the nozzle interface portion to one another, and the connection is configured to maintain a leak rate of the gas equal to or less than 110.sup.4 standard cubic centimeters per second (std. cc/s).

In an embodiment, a quantum device includes an interposer layer comprising a set of vias. In an embodiment, the quantum device includes a dielectric layer formed on a first side of the interposer, the dielectric layer including a set of transmission lines communicatively coupled to the set of vias. In an embodiment, the quantum device includes a plurality of qubit chips coupled to an opposite side of the interposer layer, each qubit chip of the plurality of qubit chips including: a plurality of qubits on a first side of the qubit chip and a plurality of protrusions on a second side of the qubit chip. In an embodiment, the quantum device includes a heat sink thermally coupled with the plurality of qubit chips, the heat sink comprising a plurality of recesses aligned with the plurality of protrusions of the plurality of qubit chips.

An electrical assembly includes an electrical connector mounted upon a PCB and receiving a CPU therein, and a liquid Nitrogen heat dissipation device is mounted upon the PCB and intimately seated upon the CPU to remove the heat therefrom. The liquid Nitrogen heat dissipation device includes a case forming a chamber to receive the liquid Nitrogen therein. A plurality of fixing arms extend outwardly and radially to fix the liquid Nitrogent heat dissipation device in position. A fixing seat is attached upon the PCB to precisely located the CPU in position with regard to the electrical connector