A semiconductor device has a first semiconductor die and second semiconductor die with a conductive layer formed over the first semiconductor die and second semiconductor die. The second semiconductor die is disposed adjacent to the first semiconductor die with a side surface and the conductive layer of the first semiconductor die contacting a side surface and the conductive layer of the second semiconductor die. An interconnect, such as a conductive material, is formed across a junction between the conductive layers of the first and second semiconductor die. The conductive layer may extend down the side surface of the first semiconductor die and further down the side surface of the second semiconductor die. An extension of the side surface of the first semiconductor die can interlock with a recess of the side surface of the second semiconductor die. The conductive layer extends over the extension and into the recess.

An integrated circuit (IC) die (100) is disclosed having a major surface delimited by at least one edge (102) of the IC die, said major surface carrying a plurality of electrically conductive contact plates (130) extending from said major surface beyond the at least one edge such that each contact plate includes an exposed contact surface portion (132) delimited by the at least one edge for mating with an electrically conductive further contact surface portion (230) on at least one further edge (220) of a body (200), said at least one further edge delimiting a cavity for receiving the IC die. An ultrasound probe including such an IC die and a method of providing such an IC die with contacts are also disclosed.

A semiconductor device has a semiconductor element provided with a functional surface on which a functional circuit is formed and with a back surface facing in the opposite direction to the functional surface, while also having a lead supporting the semiconductor element and electrically connected to the semiconductor element, and a resin package covering at least a portion of the semiconductor element and the lead. The semiconductor element has a functional surface side electrode formed on the functional surface and equipped with a functional surface side raised part that projects in the direction in which the functional surface faces. The functional surface side raised part of the functional surface side electrode is joined to the lead by solid state bonding.

A semiconductor device includes a singulated region of semiconductor material having a first major surface and a second major surface opposite to the first major surface. In one embodiment, the second major surface includes a recessed surface portion bounded by opposing sidewall portions extending outward from the region of semiconductor material in cross-sectional view. The sidewall portions have outer surfaces defining peripheral edge segments of the singulated region of semiconductor material. An active device region is disposed adjacent to the first major surface and a first conductive layer is disposed adjoining the recessed surface portion. The recessed surface portion provides a semiconductor device having improved electrical characteristics, and the sidewall portions provide a semiconductor device that is less susceptible to warpage, breakage, and other reliability issues.

Provided is a semiconductor device that can suppress a temperature increase in beam leads while reducing the number of wiring lines and can suppress an increase in manufacturing costs. The semiconductor device is provided with a power module including an upper arm and a lower arm each configured by connecting in parallel a plurality of power elements and a plurality of rectifying elements. Current to one arm flows through a plurality of separately wired beam leads. A portion of the power elements and a portion of the rectifying elements in one arm form a pair and are connected by a common beam lead.

Various embodiments provide a temperature regulated circuit. The temperature regulated circuit includes a suspended mass that is positioned in an opening of a frame. The suspended mass is suspended from the frame by a plurality of support beams that may be made of thermally insulating material. The suspended mass provides a thermally isolated substrate for an integrated circuit. The suspended mass also includes a temperature sensor configured to measure a temperature of the integrated circuit, and a heater configured to heat the integrated circuit. A controller is positioned on the frame and is configured to receive temperature measurements from the temperature sensor and control the heater based on the temperature measurements.

A method for removing material from a substrate includes providing the substrate with first and second opposing major surfaces. A masking layer is disposed along one of the first major surface and the second major surface, and is provided with a plurality of openings. The substrate is placed within an etching apparatus and material is removed from the substrate through openings using the etching apparatus. The thickness of the substrate is measured within the etching apparatus using a thickness transducer. The measured thickness is compared to a predetermined thickness and the material removal step is terminated responsive to the measured thickness corresponding to the predetermined thickness. In one embodiment, the method is used to more accurately form recessed regions in semiconductor die, which can be used in, for example, stacked device configurations.

A semiconductor device has a first semiconductor die and second semiconductor die with a conductive layer formed over the first semiconductor die and second semiconductor die. The second semiconductor die is disposed adjacent to the first semiconductor die with a side surface and the conductive layer of the first semiconductor die contacting a side surface and the conductive layer of the second semiconductor die. An interconnect, such as a conductive material, is formed across a junction between the conductive layers of the first and second semiconductor die. The conductive layer may extend down the side surface of the first semiconductor die and further down the side surface of the second semiconductor die. An extension of the side surface of the first semiconductor die can interlock with a recess of the side surface of the second semiconductor die. The conductive layer extends over the extension and into the recess.

A stacked semiconductor device structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a recessed surface portion bounded by opposing sidewall portions extending outward to define a recessed region. A conductive layer is disposed along at least the recessed surface portion. The second semiconductor device is disposed within the recessed portion and is electrically connected to the conductive layer. In one embodiment, the stacked semiconductor device is connected to a conductive lead frame and is at least partially encapsulated by a package body.

A semiconductor device has a first semiconductor die with a base material. A covering layer is formed over a surface of the base material. The covering layer can be made of an insulating material or metal. A trench is formed in the surface of the base material. The covering layer extends into the trench to provide the cantilevered protrusion of the covering layer. A portion of the base material is removed by plasma etching to form a cantilevered protrusion extending beyond an edge of the base material. The cantilevered protrusion can be formed by removing the base material to the covering layer, or the cantilevered protrusion can be formed within the base material under the covering layer. A second semiconductor die is disposed partially under the cantilevered protrusion. An interconnect structure is formed between the cantilevered protrusion and second semiconductor die.