A semiconductor device includes a semiconductor element, a first wiring member, a second wiring member, and a terminal. The semiconductor element includes a first main electrode and a second main electrode on a side opposite from the first main electrode. The first wiring member is connected to the first main electrode. The terminal has a first terminal surface connected to the second main electrode and a second terminal surface. The second terminal has four sides. Two of the four sides are parallel to a first direction intersecting the thickness direction, and other two sides of the four sides are parallel to a second direction perpendicular to the thickness direction and the first direction. The second wiring member is connected to the second terminal surface of the terminal through solder, and has a groove. The groove overlaps one or two of the four sides of the second terminal surface.

An array substrate and a manufacturing method therefor, a display panel, and a backlight module, are provided. The array substrate may comprise a base substrate, a metal wiring layer, a first planarization layer, an electrode layer, a second planarization layer, and a functional device layer stacked in sequence. The electrode layer comprises a metal sub-layer and a conductive sub-layer stacked on one side of the base substrate in sequence; the material of the metal sub-layer comprises a metal or a metal alloy; the conductive sub-layer has an oxidation resistance and covers the metal sub-layer . The functional device layer is disposed on the side of the second planarization layer distant from the base substrate, and comprises a plurality of functional devices electrically connected to the electrode layer.

A component carrier including (a) a stack having at least one electrically conductive layer structure and at least one electrically insulating layer structure; (b) an optical component embedded within the stack, wherein the optical component comprises an optically active portion; (c) an opening formed within the stack, wherein the optical component and the opening are spatially arranged and configured such that an optical communication between the optically active portion and an exterior of the stack is enabled; and (d) a protection structure extending at least partially around the optically active portion and/or the opening. The protection structure protects the optically active portion from a resin flow during an embedding of the optical component in the stack. A method for manufacturing such a component carrier.

A moat trench laterally surrounding a device region is formed in a substrate. A conductive metallic substrate enclosure structure is formed in the moat trench. Deep trenches are formed in the substrate, and a trench capacitor structure is formed in the deep trenches. The substrate may be thinned by removing a backside portion of the substrate. A backside surface of the conductive metallic substrate enclosure structure is physically exposed. A backside metal layer is formed on a backside surface of the substrate and a backside surface of the conductive metallic substrate enclosure structure. A metallic interconnect enclosure structure and a metallic cap plate may be formed to provide a metallic shield structure configured to block electromagnetic radiation from impinging into the trench capacitor structure.

A method of forming a semiconductor device includes forming a first interconnect structure over a carrier; forming a thermal dissipation block over the carrier; forming metal posts over the first interconnect structure; attaching a first integrated circuit die over the first interconnect structure and the thermal dissipation block; removing the carrier; attaching a semiconductor package to the first interconnect structure and the thermal dissipation block using first electrical connectors and thermal dissipation connectors; and forming external electrical connectors, the external electrical connectors being configured to transmit each external electrical connection into the semiconductor device, the thermal dissipation block being electrically isolated from each external electrical connection.

A layout structure of flexible circuit board includes a flexible substrate, a circuit layer, a flip-chip element and an anti-stress circuit layer. A chip mounting area and a circuit area are defined on a top surface of the flexible substrate. Bonding circuits and transmission circuits of the circuit layer are disposed on the chip mounting area and the circuit area respectively. The flip-chip element is disposed on the chip mounting area and includes bumps and a chip having a long side margin and conductive pads, the bumps are provided to connect the conductive pads and the bonding circuits. Anti-stress circuits of the anti-stress circuit layer are disposed on the chip mounting area and parallel to the long side margin of the chip, and the bumps are located between the anti-stress circuits and the long side margin of the chip.

An electronic device includes a multilevel package substrate with first, second, third, and fourth levels, a semiconductor die mounted to the first level, and a conductor backed coplanar waveguide transmission line feed with an interconnect and a conductor, the interconnect including coplanar first, second, and third conductive lines extending in the first level along a first direction from respective ends to an antenna, the second and third conductive lines spaced apart from opposite sides of the first conductive line along an orthogonal second direction, and the conductor extending in the third level under the interconnect and under the antenna.

A printed circuit board may include a substrate body portion, conductive patterns on a top surface of the substrate body portion, and a photosensitive insulating layer on the top surface of the substrate body portion and including an opening exposing at least one of the conductive patterns. The photosensitive insulating layer includes first to third sub-layers stacked sequentially. The first sub-layer includes an amine compound or an amide compound A refractive index of the second sub-layer is lower than a refractive index of the third sub-layer. A photosensitizer content of the second sub-layer is higher than a photosensitizer content of the third sub-layer.

A method for producing a 3D semiconductor device: providing a first level with a first single crystal layer; forming control circuitry of first transistors in and/or on the first level with a first metal layer above; forming a second metal layer above the first metal layer; forming a third metal layer above the second metal layer; forming at least one second level on top of or above the third metal layer; performing additional processing steps to form a plurality of second transistors within the second level; forming a fourth and fifth metal layers above second level; a global power distribution grid includes fifth metal, and local power distribution grid includes the second metal layer, where the fifth metal layer thickness is at least 50% greater than the second metal layer thickness.

A component carrier includes a stack with at least one electrically conductive layer structure and at least one electrically insulating layer structure. The stack has at least one central stack section, at least one cavity stack section, and at least one vertical opening formed in the cavity stack section. The cavity stack section at least partially surrounds the central stack section, and the thickness of the central stack section is greater than the thickness of the cavity stack section.