The present disclosure provides a method of forming a semiconductor structure and a semiconductor structure. The method of forming the semiconductor structure includes: providing an initial structure, where the initial structure includes a substrate and a dielectric layer; forming a conductive trench, where a distance between a bottom surface of the conductive trench and a second side surface of the substrate is a first spacing; forming a conductive hole, where the conductive hole extends to the second side surface of the substrate from a top surface of the dielectric layer; forming a conductive pillar, where the conductive pillar fills the conductive hole; forming an inductor structure, where the inductor structure fills the conductive trench, and projection of the inductor structure on the substrate is provided as a spiral structure that uses projection of the conductive pillar on the substrate as an inductor center and that surrounds the inductor center.

A microelectronic device has bump bonds and an inductor on a die. The microelectronic device includes first lateral conductors extending along a terminal surface of the die, wherein at least some of the first lateral conductors contact at least some of terminals of the die. The microelectronic device also includes conductive columns on the first lateral conductors, extending perpendicularly from the terminal surface, and second lateral conductors on the conductive columns, opposite from the first lateral conductors, extending laterally in a plane parallel to the terminal surface. A first set of the first lateral conductors, the conductive columns, and the second lateral conductors provide the bump bonds of the microelectronic device. A second set of the first lateral conductors, the conductive columns, and the second lateral conductors are electrically coupled in series to form the inductor. Methods of forming the microelectronic device are also disclosed.

A semiconductor device includes an element region including a semiconductor substrate and a plurality of elements formed on the semiconductor substrate and a wiring region disposed on the element region and including an interlayer insulating layer, a plurality of wiring patterns in the interlayer insulating layer, and a via structure extending in a first direction, perpendicular to an upper surface of the semiconductor substrate in the interlayer insulating layer, wherein the plurality of elements include a first input/output circuit transmitting and receiving a first signal and a second I/O circuit transmitting and receiving a second signal, different from the first signal, the plurality of wiring patterns is a coil pattern includes an inductor circuit, the coil pattern is connected to the first I/O circuit, and the via structure passes through a center of the coil pattern and is connected to the second I/O circuit.

Embodiments described herein provide circuitry employing one or more inductors having an unconventional turn-ratio. The circuitry includes a primary inductor having a first length located on a first layer of an integrated circuit (IC). The circuitry further includes a secondary inductor having a second length located on a second layer of the IC different from the first layer, whereby the second length is greater than the first length, with a ratio between the first and the second lengths corresponding to a non-integer turn-ratio.

Disclosed is a gallium arsenide (GaAs) enabled tunable filter for, e.g., 6 GHz Wi-Fi RF Frontend, with integrated high-performance varactors, metal-insulator-metal (MIM) capacitors, and 3D solenoid inductors. The tunable filter comprises a hyper-abrupt variable capacitor (varactor) high capacitance tuning ratio. The tunable filter also comprises a GaAs substrate in which through-GaAs-vias (TGV) are formed. The varactor along with the MIM capacitors and the 3D inductors is formed in an upper conductive structure on upper surface of the GaAs substrate. Lower conductive structure comprising lower conductors is formed on lower surface of the GaAs substrate. Electrical coupling between the lower and upper conductive structures is provided by the TGVs. The tunable filter can be integrated with radio frequency front end (RFFE) devices.

According to one or more embodiments, a semiconductor integrated circuit device includes a first inductor portion, a second inductor portion, and a third inductor portion. The first inductor portion is in a first region of a first wiring layer. The second inductor portion is disposed in a second region of the first wiring layer. The third inductor portion is on a second wiring layer spaced from the first wiring layer in a first direction. The third inductor portion includes a first end portion electrically connected to a first end of the first inductor portion, a second end portion electrically connected to a first end of the second inductor portion, and a third end portion between the first and second end portions. The first inductor portion, the second inductor portion, and the third inductor portion constitute an inductor element.

A transformer of the symmetric-asymmetric type includes comprising a primary inductive circuit and a secondary inductive circuit formed in a same plane by respective interleaved and stacked metal tracks. A first crossing region includes a pair of connection plates facing one another, with each connection plate having a rectangular shape that is wider than the metal tracks, and diagonally connected to tracks of the secondary inductive circuit.

Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

A die for a semiconductor chip package includes a first surface including an integrated circuit formed therein. The die also includes a backside surface opposite the first surface. The backside surface has a total surface area defining a substantially planar region of the backside surface. The die further includes at least one device formed on the backside surface. The at least one device includes at least one extension extending from the at least one device beyond the total surface area.

In conventional device packages, separate standalone inductors are provided and mounted on an interposer substrate along with a die. Separate inductors reduce integration density, decrease flexibility, increase footprint, and generally increase costs. To address such disadvantages, it is proposed to provide a part of an inductor in a substrate below a die. The proposed stacked substrate inductor may include a first inductor in a first substrate, a second inductor in a second a second substrate stacked on the first substrate, and an inductor interconnect coupling the first and second inductors. The core regions of the first and second inductors may overlap with each other at least partially. The proposed stacked substrate inductor may enhance integration density, increase flexibility, decrease footprint, and/or reduce costs.