An integrated circuit includes a first and a second conductive path over a substrate, a coil structure over the substrate, a voltage sensing circuit electrically coupled with the coil structure, and a ferromagnetic structure including an open portion. The first conductive path is configured to carry a first time-varying current and to generate a first time-varying magnetic field. The second conductive path is configured to carry a second time-varying current and to generate a second time-varying magnetic field. The first conductive path and the second conductive path extend through the open portion of the ferromagnetic structure. The first conductive path includes a first conductive line below the ferromagnetic structure, a second conductive line above the ferromagnetic structure, and a first via plug coplanar with the ferromagnetic structure, the first via plug electrically coupling the first conductive line and the second conductive line.

A semiconductor device includes: a polygonal inductive device disposed on a first layer on a substrate, the polygonal inductive device including a first line portion; a first conductive line disposed on a second layer on the substrate; a second conductive line disposed on a third layer on the substrate; and a first conductive via arranged to electrically couple the second conductive line to the first conductive line; wherein the first layer is different from the second layer and the third layer, the first conductive line is electrically connected to a reference voltage, and the first conductive line crosses the first line portion viewing from a top of the semiconductor device.

Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

Various semiconductor chip devices and methods of making the same are disclosed. In one aspect, an apparatus is provided that includes a first redistribution layer (RDL) structure having a first plurality of conductor traces, a first molding layer on the first RDL structure, plural conductive pillars in the first molding layer, each of the conductive pillars including a first end and a second end, a second RDL structure on the first molding layer, the second RDL structure having a second plurality of conductor traces, and wherein some of the conductive pillars are electrically connected between some of the first plurality of conductor traces and some of the second plurality of conductor traces to provide a first inductor coil.

Fabrication of a bondwire inductor between connection pads of a semiconductor package using a wire bonding process is disclosed herein. To that end, the bondwire inductor is fabricated by extending a bondwire connecting two connection pads of the semiconductor package around a dielectric structure, e.g., a dielectric post or posts, disposed between the connection pads a defined amount. In so doing, the bondwire inductor adds inductance between the connection pads, where the added inductance is defined by factors which at least include the amount the bondwire extends around the dielectric structure. Such additional inductance may be particularly beneficial for certain semiconductor devices and/or circuits, e.g., monolithic microwave integrated circuits (MMICs) to control or supplement impedance matching, harmonic termination, matching biasing, etc.

A 90-degree, 3 dB coupler has an input port, an isolated port, a first output port, and a second output port. A plurality of solenoid structures are arranged in a parallel, spaced relationship. A first group of the interconnects bridge the solenoid structures of a first set that define a first contiguous connection from the input port to the first output port. A second group of interconnects bridge the solenoid structures of a second set that define a second contiguous connection from the isolated port to the second output port. A third group of interconnects bridge the solenoid structures of a third set that define a third contiguous connection from the isolated port to the second output port. The solenoid structures are each unique to a respective one of the first set, second set, and the third set.

Systems, methods, and devices for a ball grid array with non-linear conductive routing are described herein. Such a ball grid array may include a plurality of solder balls that are electrically coupled by a non-linear conductive routing. The non-linear conductive routing may include a plurality of routing sections where each of the plurality of routing sections is disposed at an angle to adjacent routing sections.

An integrated circuit includes a T-coil formed in a first metal layer, wherein the T-coil may include: a first inductor connected to a first terminal and a second terminal; and a second inductor connected to the second terminal and a third terminal, wherein the first inductor and the second inductor may include a first pattern and a second pattern, respectively, the first and second patterns extending parallel to each other in a first direction from the second terminal in the first metal layer, and wherein the first pattern and the second pattern may form a bridge capacitor of the T-coil.

A ferromagnetic-polymer composite material comprises a polymer and a plurality of ferromagnetic film platelets disposed in the polymer. Each ferromagnetic film platelet comprises first and second insulator layers and a ferromagnetic layer disposed between the first and second insulator layers. The ferromagnetic layer can be magnetically anisotropic in which a hard axis of magnetization is aligned parallel to a plane that passes through and parallel to an interface between the first insulator layer and the ferromagnetic layer. The easy and/or hard axes of magnetization in the ferromagnetic film platelets can be aligned. An inductor can have a core formed of the ferromagnetic-polymer composite material.

A semiconductor device includes a first semiconductor chip, an adhesive layer that is formed on the first semiconductor chip, and a second semiconductor chip that is arranged on the first semiconductor chip via the adhesive layer. The first semiconductor chip has a first semiconductor substrate and a first wiring layer. The first wiring layer has a first inductor and a first electrode pad. The first wiring layer is formed on the first semiconductor substrate. The second semiconductor chip has a second wiring layer and a second semiconductor substrate. The second wiring layer is formed on the first wiring layer via the adhesive layer. The second semiconductor substrate is formed on the second wiring layer, and has a first opening. In a plan view, the first electrode pad is formed so as not to overlap with the second semiconductor chip, and a second electrode pad overlaps with the first opening.