The present disclosure provides a method for manufacturing a semiconductor structure having a vertical fin with an oxidized sidewall. The method of manufacturing the semiconductor structure includes the steps of providing a substrate having a bottom source/drain and a bottom cathode/anode; forming a channel fin on the bottom source/drain of the substrate and a vertical fin on the cathode/anode of the substrate; forming a top source/drain on the channel fin and a top cathode/anode on the vertical fin; forming a gate structure on the channel fin; and forming an oxidized sidewall on the vertical fin.

The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.

The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.

A memory device includes first nanostructures stacked on top of one another; first gate stacks, where two adjacent ones of the first gate stacks wrap around a corresponding first nanostructure; second nanostructures stacked on top of one another; second gate stacks, where two adjacent ones of the second gate stacks wrap around a corresponding second nanostructure; a first drain/source feature electrically coupled to a first end of the first nanostructures; a second drain/source feature electrically coupled to both of a second end of the first nanostructures and a first end of the second nanostructures; and a third drain/source feature electrically coupled to a second end of the second nanostructures. At least one of the plurality of first gate stacks is in direct contact with at least one of the first drain/source feature or the second drain/source feature.

An integrated circuit (122) includes an on-chip boot ROM (132) holding boot code, a non-volatile security identification element (140) having non-volatile information determining a less secure type or more secure type, and a processor (130). The processor (130) is coupled to the on-chip boot ROM (132) and to the non-volatile security identification element (140) to selectively execute boot code depending on the non-volatile information of the non-volatile security identification element (140). Other technology such as processors, methods of operation, processes of manufacture, wireless communications apparatus, and wireless handsets are also disclosed.

An integrated circuit chip is attached to a support that includes first conductive elements. First conductive pads are located on the integrated circuit chip and are electrically coupled to the first conductive elements by conductive wires. The integrated circuit chip further includes a conductive track. A switch circuit is provided to selectively electrically connect each first conductive pad to the conductive track. To test the conductive wires, a group of first conductive pads are connected by their respective switch circuits to the conductive track and current flow between corresponding first conductive elements is measured.

An integrated circuit with a fault reporting structure. The integrated circuit has at least one power MOSFET having a plurality of MOSFET cells with each MOSFET cell having a drain metal and a source metal, and the integrated circuit has a power MOSFET area for routing the drain metals and the source metals of the plurality of MOSFET cells. The fault reporting structure has a metal net routed in the power MOSFET area or in an area above or below the power MOSFET area.

An integrated circuit with a fault reporting structure. The integrated circuit has at least one power MOSFET having a plurality of MOSFET cells with each MOSFET cell having a drain metal and a source metal, and the integrated circuit has a power MOSFET area for routing the drain metals and the source metals of the plurality of MOSFET cells. The fault reporting structure has a metal net routed in the power MOSFET area or in an area above or below the power MOSFET area.

A transistor includes: a gate structure disposed on a substrate, and including a gate insulation layer and a gate electrode; a first impurity region disposed at an upper portion of a substrate and adjacent to a first sidewall of the gate structure; a second impurity region disposed at an upper portion of the substrate and adjacent to a second sidewall opposite to the first sidewall of the gate structure; and a first threshold voltage controlling line spaced apart from the substrate, wherein the first threshold voltage controlling line faces at least a portion of the first impurity region, wherein the first threshold voltage controlling line includes a conductive material, and wherein the first threshold voltage controlling line extends in a direction that crosses a direction in which the first impurity region extends.

An electronic device and method of fabricating the same are provided herein. The electronic device includes a first main pad; a second main pad; a first repair line electrically connected to the first main pad; a second repair line electrically connected to the second main pad, wherein the first repair line and the second repair line forms a first weldable region; a first spare pad; a second spare pad; a connection line electrically connected to the second repair line, the first spare pad and the second spare pad; and a first electronic unit disposed on the first main pad and the second main pad.