An electronic substrate may be fabricated to include a fine pitch dielectric layer having an upper surface, a coarse pitch dielectric layer on the upper surface of the fine pitch dielectric layer, and at least one hybrid conductive via extending through the fine pitch dielectric layer and the coarse pitch dielectric layer. The hybrid conductive via is fabricated such that a portion thereof that extends through the fine pitch dielectric layer is smaller than a portion extending through the coarse pitch dielectric layer, which results in a stepped configuration, wherein a portion of the hybrid conductive via abuts the upper surface of the fine pitch dielectric layer. In an embodiment of the present description, an integrated circuit package may be formed with the electronic substrate, wherein at least two integrated circuit devices may be attached to the electronic substrate, such that the bridge provides device-to-device interconnection therebetween.

An integrated circuit package includes a substrate including at least one electrical connection to at least one of power or ground. The package further includes a bridge structure including at least one layer of conductive material and at least one layer of insulative material. The bridge structure is configured to be coupled to the substrate such that the conductive material is electrically connected to the at least one electrical connection. The bridge structure includes a side pad made of conductive material that is electrically connected to the at least one electrical connection. The side pad is in direct contact with the conductive material and with the insulative material of the bridge structure. The side pad forms an end face of the bridge structure such that the conductive material of the side pad is exposed.

A device and method for providing enhanced bridge structures is disclosed. A set of conducting and insulating layers are deposited and lithographically processed. The conducting layers have uFLS routing. A bridge with uFLS contacts and die disposed on the underlying structure such that the die are connected with the uFLS contacts and uFLS routing. For core-based structures, the layers are formed after the bridge is placed on the underlying structure and the die connected to the bridge through intervening conductive layers. For coreless structures, the layers are formed over the bridge and carrier, which is removed prior to bonding the die to the bridge, and the die bonded directly to the bridge.

Disclosed is an apparatus including a molded multi-die high density interconnect including: a bridge die having a first plurality of interconnects and second plurality of interconnects. The apparatus also includes a first die having a first plurality of contacts and a second plurality of contacts, where the second plurality of contacts is coupled to the first plurality of interconnects of the bridge die. The apparatus also includes a second die having a first plurality of contacts and a second plurality of contacts, where the second plurality of contacts is coupled to the second plurality of interconnects of the bridge die. The coupled second plurality of contacts and interconnects have a smaller height than the first plurality of contacts of the first die and second die.

A semiconductor package may include a substrate including a first coupling terminal and a second coupling terminal, a first chip disposed on the substrate, the first chip including a first pad and a second pad, and a connection structure connecting the first coupling terminal to the first pad. A portion of the connection structure may be in contact with a first side surface of the first chip. The connection structure may include a connection conductor electrically connecting the first pad to the first coupling terminal.

Semiconductor devices and methods of manufacture are provided. In embodiments the semiconductor device includes a substrate, a first interposer bonded to the substrate, a second interposer bonded to the substrate, a bridge component electrically connecting the first interposer to the second interposer, two or more first dies bonded to the first interposer; and two or more second dies bonded to the second interposer.

A package structure includes a core substrate including a substrate base including a plurality of first cavities and a plurality of second cavities, a plurality of blocks in the plurality of second cavities; and a plurality of bridge structures that extend between each of the plurality of blocks and the substrate base, a plurality of semiconductor chips in the plurality of first cavities, and a molding layer configured to cover the core substrate and the plurality of semiconductor chips, a portion of the molding layer being in the plurality of first cavities and the plurality of second cavities.

An interposer includes a base layer having a first surface and a second surface, a redistribution structure on the first surface, an interposer protection layer on the second surface, a pad wiring layer on the interposer protection layer, an interposer through electrode passing through the base layer and the interposer protection layer and electrically connecting the redistribution structure to the pad wiring layer, an interposer connection terminal attached to the pad wiring layer, and a wiring protection layer including a first portion covering a portion of the interposer protection layer adjacent to the pad wiring layer, a second portion covering a portion of a top surface of the pad wiring layer, and a third portion covering a side surface of the pad wiring layer. The third portion is disposed between the first portion and the second portion. The first to third portions have thicknesses different from each other.

A pillar structure is provided. The pillar structure includes a plurality of pillars. Each of the pillars include a capping material layer formed in a pit etched into a template wafer, a conductive plug formed on the capping material layer, a base layer formed on the conductive plug, and an attach material layer formed on the base layer. The pillars are joined vertically together to form the pillar structure.

An integrated circuit die includes input buffer circuits that are enabled during an input mode of operation in response to first control signals to transmit input signals into the integrated circuit die from conductive bumps. Each of the input buffer circuits is coupled to one of the conductive bumps. The integrated circuit die also includes output buffer circuits that are each coupled to one of the conductive bumps. The output buffer circuits are enabled during an output mode of operation in response to second control signals to transmit output signals from the integrated circuit die to the conductive bumps. The input buffer circuits are disabled from transmitting signals during the output mode of operation in response to the first control signals. The output buffer circuits are disabled from transmitting signals during the input mode of operation in response to the second control signals.