The present invention relates generally to semiconductor structures and methods of manufacturing and, more particularly, to improving heat dissipation of devices, such as active devices like inductors, by filling portions of the semiconductor structure with thermally conductive and electrical isolating material that may serve as a heat sink to a base substrate. In an embodiment, an inductor may be formed above a cavity region in which the thermally conductive and electrical isolating material has been formed. Heat may then be dissipated from the inductor to the cavity, and eventually to the base substrate, through trenches filled with the thermally conductive and electrical isolating material.

A method of forming a semiconductor device includes forming a lower coil segment in a first dielectric layer over a substrate, forming a second dielectric layer over the lower coil segment and the first dielectric layer, anisotropically etching a top portion of the second dielectric layer to form an opening over the lower coil segment, depositing magnetic material in the opening to form a magnetic core, forming a third dielectric layer over the magnetic core and the second dielectric layer, forming vias extending through the second dielectric layer and the third dielectric layer, and after forming the vias, forming an upper coil segment over the third dielectric layer and the magnetic core, wherein the vias connect the upper coil segment with the lower coil segment.

A semiconductor device includes a method of manufacturing a semiconductor device. The method includes forming an interconnect structure. In some embodiments, the forming of the interconnect structure includes forming a first patterned layer over a substrate, attaching a die attach film (DAF) to a permalloy device and transporting the permalloy device to the first patterned layer through a pick and place operation, forming a second patterned layer in the same tier as the permalloy device, and bonding a semiconductor die to the interconnect structure. In some embodiments, the second patterned layer is aligned with the first patterned layer, forming a third patterned layer over the second patterned layer and the permalloy device. In some embodiments, the first patterned layer, the second patterned layer and the third patterned layer collectively form a coil winding around the permalloy device.

A semiconductor structure and a method for forming the semiconductor structure are disclosed. The method includes the following operations. A first integrated circuit component having a fuse structure is received. A second integrated circuit component having an inductor is received. The second integrated circuit component is bonded to the first integrated circuit component. The inductor is electrically connected to the fuse structure, wherein the inductor is electrically connected to a ground through the fuse structure.

Low inductance to ground can be provided in wire-bond based device packages. An example device package may include a die on a package substrate, a mold on the package substrate and encapsulating the die, an upper ground conductor on the mold, and ground wire bonds within the mold. The die may include a plurality of terminals on an upper surface of the die. The plurality of ground wire bonds may electrically couple the die and the upper ground conductor. For each ground wire bond, a first end of that ground wire bond may be configured to electrically couple to a corresponding terminal on the upper surface of the die and a second end of that ground wire bond may be configured to electrically couple to the upper ground conductor at the upper surface of the mold.

A biological information detecting apparatus includes: an LC resonant pressure sensor including a resonant circuit including a capacitor and an inductor, and having a resonant frequency that changes depending on a change in external pressure applied to the capacitor; and an integrated circuit (IC) chip package including a coil type antenna radiating a radio frequency (RF) signal within a preset frequency band, wherein a change in the resonant frequency results in a change in a power transmission rate depending on a inductive coupling between the resonant frequency and a frequency of the RF signal. The IC chip package includes the coil type antenna disposed in a region overlapping the LC resonant pressure sensor in a plan view of the IC chip package.

An electronic component including a body portion and an electrode disposed on the body portion is provided. The electrode includes a first metal layer, a second metal layer, and a third metal layer. The first metal layer contains silver (Ag) as a main component and includes first dispersion portions containing glass as a main component and second dispersion portions containing nickel as a main component. The second metal layer is disposed on the first metal layer and contains nickel (Ni) as a main component. The third metal layer is disposed on the second metal layer and contains tin (Sn) as a main component. An area of the first dispersion portions is larger than an area of the second dispersion portions in a sectional view of the electrode.

An integrated circuit device includes a first substrate having a ground plane. The integrated circuit device also includes a second substrate. The second substrate has a first layer of passive devices. The passive devices include at least one inductor on a first side of the second substrate. The first layer of passive devices is substantially orthogonal to the ground plane and the second substrate supported by the first substrate. An inductor magnetic field is substantially parallel to the ground plane.

A signal transmission insulating device includes: a first coil; a second coil opposing the first coil to form a transformer together with the first coil; a first insulating film provided between the opposing first coil and second coil and made of a first dielectric material; a second insulating film surrounding the first coil and made of a second dielectric material having a lower resistivity or a higher permittivity than the first dielectric material; and a third insulating film surrounding the second coil and made of a third dielectric material having a lower resistivity or a higher permittivity than the first dielectric material.

A high-frequency module includes a semiconductor chip device that is mounted on an external circuit substrate by wire bonding. A switch forming section, a power amplifier forming section and a low noise amplifier forming section, realized by a group of FETs, which are active elements, are formed in the semiconductor chip device. Flat plate electrodes, which form capacitors are formed in the semiconductor chip device. Conductor wires that connect the external circuit substrate and the semiconductor chip device function as inductors. A group of passive elements that includes inductors and capacitors is formed. As a result, a high-frequency module that can be reduced in size while still obtaining the required transmission characteristic is realized.