The present disclosure describes a structure with a controlled polyimide profile and a method for forming such a structure. The method includes depositing, on a substrate, a photoresist containing polyimide and performing a first anneal at a first temperature. The method further includes exposing the photoresist to a radiation source through a photomask having a pattern associated with a shape of a polyimide opening. The method further includes performing a second anneal at a second temperature and removing a portion of the photoresist to form the polyimide opening. The method further includes performing a third anneal at a third temperature and cleaning the polyimide opening by ashing.

The disclosure provides a semiconductor chip suit for driving a display panel. The semiconductor chip includes a first pad group and a second pad group. The first pad group and the second pad group are disposed at a first long side of the semiconductor chip. The first distance from the first pad group to the edge of the first long side is different from the second distance from the second pad group to the edge of the first long side. The first pad group and the second pad group belong to a first pad row disposed at the first long side. The first pad group comprises a plurality of pads which are closer to the middle of the first pad row than the second pad group.

A semiconductor device includes a first substrate, a first insulating film disposed on the first substrate, and a semiconductor layer disposed on the first insulating film. The semiconductor device further includes a metal layer with a first portion and a second portion. The first portion is disposed on the semiconductor layer, and the second portion includes a bonding pad and is disposed on the first insulating film without the semiconductor layer interposed between the second portion and the first insulating film.

A semiconductor device and a semiconductor package including the same are provided. The semiconductor device includes a semiconductor element; a protective layer disposed adjacent to the surface of the semiconductor element, the protective layer defining an opening to expose the semiconductor element; a first bump disposed on the semiconductor element; and a second bump disposed onto the surface of the protective layer. The first bump has a larger cross-section surface area than the second bump.

In some examples, a package comprises a semiconductor die and a bond pad formed upon the semiconductor die. The bond pad has a protrusion on a top surface of the bond pad. The package also comprises a metal contact and a bond wire coupled to the protrusion and to the metal contact.

Herein disclosed are a micro-component transfer head, a micro-component transfer device, and a micro-component display. Said micro-component transfer head comprises a carrying surface that corresponds to a micro-component extraction area. Said extraction area conforms with a first geometric object, which comprises at least an acute angle. A second geometric object comprises at least a right angle and is constituted of n copies of the first geometric object, n being an integer greater than 1. The shape of the first geometric object differs from that of the second.

A three-dimensional pad structure includes a substrate; a pad disposed on the substrate, wherein a perimeter of the pad is covered with a solder mask; and at least one conductive pillar protruding from a top surface of the pad.

A semiconductor package structure includes a conductive pad formed over a substrate. The structure also includes a passivation layer formed over the conductive pad. The structure also includes a first via structure formed through the passivation layer and in contact with the conductive pad. The structure also includes a first encapsulating material surrounding the first via structure. The structure also includes a redistribution layer structure formed over the first via structure. The first via structure has a lateral extending portion embedded in the first encapsulating material near a top surface of the first via structure.

A semiconductor structure including a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes a first bonding structure. The second semiconductor die is bonded to the first bonding structure of the first semiconductor die. The first bonding structure includes a first dielectric layer, a second dielectric layer covering the first dielectric layer, and first conductors embedded in the first dielectric layer and the second dielectric layer, wherein each of the first conductors includes a first conductive barrier layer covering the first dielectric layer and a first conductive pillar disposed on the first conductive barrier layer, and the first conductive pillars are in contact with the second dielectric layer.

Semiconductor devices with controllers under stacks of semiconductor packages and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a package substrate, a controller attached to the package substrate, and at least two semiconductor packages disposed over the controller. Each semiconductor package includes a plurality of semiconductor dies. The semiconductor device further includes an encapsulant material encapsulating the controller and the at least two semiconductor packages.