Various embodiments of an integrated circuit package and a method of forming such package are disclosed. The package includes a substrate having a core layer disposed between a first dielectric layer and a second dielectric layer, a die disposed in a cavity of the core layer, and an encapsulant disposed in the cavity between the die and a sidewall of the cavity. The package further includes a first patterned conductive layer disposed within the first dielectric layer, a device disposed on an outer surface of the first dielectric layer such that the first patterned conductive layer is between the device and the core layer, a second patterned conductive layer disposed within the second dielectric layer, and a conductive pad disposed on an outer surface of the second dielectric layer such that the second patterned conductive layer is between the conductive pad and the core layer.

A package structure includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, antenna elements and a first insulating film. The insulating encapsulant is encapsulating the at least one semiconductor die, the insulating encapsulant has a first surface and a second surface opposite to the first surface. The first redistribution layer is disposed on the first surface of the insulating encapsulant. The second redistribution layer is disposed on the second surface of the insulating encapsulant. The antenna elements are located over the second redistribution layer. The first insulating film is disposed in between the second redistribution layer and the antenna elements, wherein the first insulating film comprises a resin rich region and a filler rich region, the resin rich region is located in between the filler rich region and the second redistribution layer and separating the filler rich region from the second redistribution layer.

This publication discloses an electronic module, comprising a first conductive pattern layer and a first insulating-material layer on at least one surface of the first conductive pattern layer, at least one opening in the first insulating-material layer that extends through the first insulating-material layer, a component having a contact surface with contact terminals, the component being arranged at least partially within the opening with its contact terminals electrically coupled to the first conductive pattern layer, a second insulating-material layer provided on the first insulating-material layer, and a conductive pattern embedded between the first and second insulating material layers. This publication additionally discloses a method for manufacturing an electronic module.

A method comprises embedding a semiconductor structure in a molding compound layer, depositing a plurality of photo-sensitive material layers over the molding compound layer, developing the plurality of photo-sensitive material layers to form a plurality of openings, wherein a first portion and a second portion of an opening of the plurality of openings are formed in different photo-sensitive material layers and filling the first portion and the second portion of the opening with a conductive material to form a first via in the first portion and a first redistribution layer in the second portion.

Embodiments of the present disclosure are directed towards an integrated circuit (IC) package including a first die at least partially embedded in a first encapsulation layer and a second die at least partially embedded in a second encapsulation layer. The first die may have a first plurality of die-level interconnect structures disposed at a first side of the first encapsulation layer. The IC package may also include a plurality of electrical routing features at least partially embedded in the first encapsulation layer and configured to route electrical signals between a first and second side of the first encapsulation layer. The second side may be disposed opposite to the first side. The second die may have a second plurality of die-level interconnect structures that may be electrically coupled with at least a subset of the plurality of electrical routing features by bonding wires.

A patch structure of an integrated circuit package comprises a core having a first side facing downwards and a second side facing upwards. A first solder resist (SR) layer is formed on the first side of the core, wherein the first SR layer comprises a first layer interconnect (FLI) and has a first set of one or more microbumps thereon to bond to one or more logic die. A second solder resist (SR) layer is formed on the second side of the core, wherein the second SR layer has a second set of one or more microbumps thereon to bond with a substrate. One or more bridge dies includes a respective sets of bumps, wherein the one or more bridge dies is disposed flipped over within the core such that the respective sets of bumps face downward and connect to the first set of one or more microbumps in the FLI.

Disclosed are a system-on-chip integrated packaging structure, a manufacturing method therefor and a three-dimensional stacked device. The system-on-chip integrated packaging structure includes: a substrate, a chip, a first electrical connection structure and a second electrical connection structure. A front surface of the substrate is provided with a recess and a via welding pad, and a back surface of the substrate is provided with a conductive via extending to the via welding pad. The chip is embedded in the recess, and a chip welding pad is disposed on a surface of the chip away from a bottom surface of the recess. Different chips may be electrically connected by means of the first electrical connection structure and the second electrical connection structure, which is conducive to form a three-dimensional stacked structure with high-density interconnection, miniaturized packaging and thinning.

A manufacturing method of a package structure of an electronic device is provided. The manufacturing method includes the following. First, a carrier plate is provided. The carrier plate includes a composite structure and has a first surface and a second surface opposite to each other. Next, an anti-warpage structure is formed on the first surface of the carrier plate. Then, a redistribution structure is formed on the second surface of the carrier plate. When the package structure manufactured with the manufacturing method of the package structure of the electronic device of the disclosure is applied to the electronic device, reliability and/or electrical properties of the electronic device are enhanced.

This application discloses a chip package assembly, an electronic device, and a preparation method of a chip package assembly. The chip package assembly includes a package substrate, a chip, and a heat dissipation part. The package substrate includes an upper conductive layer, a lower conductive layer, and a conductive part connected between the upper conductive layer and the lower conductive layer. The chip includes a front electrode and a back electrode that are disposed opposite each other, the chip is embedded in the package substrate, the conductive part surrounds the chip, the front electrode is connected to the lower conductive layer, and the back electrode is connected to the upper conductive layer. The heat dissipation part is connected to a surface of the upper conductive layer that is away from the chip. The upper conductive layer, the lower conductive layer, and the conductive part each conduct heat.

The present disclosure relates to a radio frequency (RF) device that includes a mold device die and a multilayer redistribution structure underneath the mold device die. The mold device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion, and a first mold compound. The FEOL portion includes an active layer, a contact layer, and isolation sections. Herein, the active layer and the isolation sections reside over the contact layer, and the active layer is surrounded by the isolation sections. The first mold compound resides over the active layer without silicon crystal, which has no germanium content, in between. The multilayer redistribution structure includes redistribution interconnections and a number of bump structures that are at bottom of the multilayer redistribution structure and electrically coupled to the mold device die via the redistribution interconnections.