H01L24/31

ELECTRONIC DOCUMENT MODULE COMPRISING A CHIP AND A CONTACT INTERFACE WITH AN ANTENNA CONNECTED TO AN I/O PORT OF THE CHIP, ELECTRONIC DOCUMENT COMPRISING SUCH A MODULE AND METHOD FOR CHECKING A CONNECTION BETWEEN THE MODULE AND A CORRESPONDING ANTENNA

The present application relates to an electronic document module comprising a medium having a so-called internal face provided with at least two contact interfaces with an antenna, each of the contact interfaces with the antenna of the internal face of the medium being configured to be in contact with a connection pad of an antenna of an electronic document body, and with a chip comprising at least one I/O port, and one of the two contact interfaces with the antenna of the internal face of the medium being connected to the I/O port of the chip. The application also relates to an electronic document comprising such a module and a method for checking a connection between the module and a corresponding antenna.

Electronic device
11688710 · 2023-06-27 · ·

An electronic device is provided. The electronic device includes: a substrate, a first light-emitting element, and a second light-emitting element. The first light-emitting element is disposed on the substrate and configured to emit a first color light under a first current density when the substrate provides a first current to the first light-emitting element. The second light-emitting element is disposed on the substrate and configured to emit a second color light under a second current density when the substrate provides a second current to the second light-emitting element. The first current is equal to the second current, and the first current density is different from the second current density.

METHOD OF MANUFACTURING MOUNTING SUBSTRATE AND MOUNTING SUBSTRATE MANUFACTURING APPARATUS
20170354041 · 2017-12-07 ·

A method of manufacturing a mounting substrate includes a provisional pressing process, a driver pressing process, and a flexible printed circuit board pressing process. In the provisional pressing process, a driver 40 and a flexible printed circuit board are provisionally pressed. In the driver pressing process, the driver 40 is thermally pressed with using a pressing head 52 having a driver pressing surface 53 and a flexible printed circuit board pressing surface 54, and pressure force is applied to the driver 40 with elastically deforming a buffer 57. In the flexible printed circuit board pressing process, the pressing head 52 is moved closer to the glass substrate GS such that a height level of the flexible printed circuit board pressing surface 54 with respect to a mounting surface 21 and a height level of the driver pressing surface 53 with respect to the mounting surface 21 are same and pressure force is applied to the flexible printed circuit board 30 with elastically deforming the buffer 57.

Integrated fan-out package and method of fabricating the same

An integrated fan-out package including a die attach film, an integrated circuit component, an insulating encapsulation, and a redistribution circuit structure is provided. The integrated circuit component is disposed on the die attach film and includes a plurality of conductive terminals. The die attach film includes an uplifted edge which raises toward sidewalls of the integrated circuit component. The insulating encapsulation encapsulates the uplifted edge and the integrated circuit component. The redistribution circuit structure is disposed on the integrated circuit component and the insulating encapsulation, and the redistribution circuit structure is electrically connected to the conductive terminals of the integrated circuit component. A method of fabricating the integrated fan-out package are also provided.

Semiconductor laser device

A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer.

ELECTRONIC DEVICE
20230282606 · 2023-09-07 ·

An electronic device is provided. The electronic device includes a substrate and another substrate disposed opposite to the substrate. The electronic device includes a first light-emitting element disposed on the substrate and configured to emit blue light under a first current density when the substrate provides a first current to the first light-emitting element. The electronic device includes a second light-emitting element disposed on the substrate and configured to emit green light or red light under a second current density when the substrate provides a second current to the second light-emitting element. The electronic device includes a protective layer disposed between the substrate and the another substrate and covering the first light-emitting element and the second light-emitting element. The electronic device includes an adhesive layer disposed between the protective layer and the another substrate.

LIQUID PHASE BONDING FOR ELECTRICAL INTERCONNECTS IN SEMICONDUCTOR PACKAGES

Implementations of a semiconductor package may include a pin coupled to a substrate. The pin may include a titanium sublayer, a nickel sublayer, and one of a silver and tin intermetallic layer or a copper and tin intermetallic layer, the one of the silver and tin intermetallic layer or the copper and tin intermetallic layer having a melting temperature greater than 260 degrees Celsius. The one of the silver and tin intermetallic layer or the copper and tin intermetallic layer may be formed by reflowing a tin layer and one of a silver layer or copper layer with a silver layer of the substrate where the substrate may be directly coupled to the one of the silver and tin intermetallic layer or the copper and tin intermetallic layer. The substrate may include a copper layer that was directly coupled with the silver layer before the reflow.

Integrated fan-out package and method of fabricating the same

An integrated fan-out package including a die attach film, an integrated circuit component, an insulating encapsulation, and a redistribution circuit structure is provided. The integrated circuit component is disposed on the die attach film and includes a plurality of conductive terminals. The die attach film includes an uplifted edge which raises toward sidewalls of the integrated circuit component. The insulating encapsulation encapsulates the uplifted edge and the integrated circuit component. The redistribution circuit structure is disposed on the integrated circuit component and the insulating encapsulation, and the redistribution circuit structure is electrically connected to the conductive terminals of the integrated circuit component. A method of fabricating the integrated fan-out package are also provided.

SEMICONDUCTOR PACKAGES WITH AN INTERMETALLIC LAYER

A method of forming a semiconductor package. Implementations include forming on a die backside an intermediate metal layer having multiple sublayers, each including a metal selected from the group consisting of titanium, nickel, copper, silver, and combinations thereof. A tin layer is deposited onto the intermediate metal layer and is then reflowed with a silver layer of a substrate to form an intermetallic layer having a melting temperature above 260 degrees Celsius and including an intermetallic consisting of silver and tin and/or an intermetallic consisting of copper and tin. Another method of forming a semiconductor package includes forming a bump on each of a plurality of exposed pads of a top side of a die, each exposed pad surrounded by a passivation layer, each bump including an intermediate metal layer as described above and a tin layer coupled to the intermediate metal layer is reflowed to form an intermetallic layer.

Structure with controlled capillary coverage

A structure with controlled capillary coverage is provided and includes a substrate including one or more first contacts, a component and adhesive. The component includes one or more second contacts and a rib disposed at a distance from each of the one or more second contacts. The component is disposed such that the one or more second contacts are communicative with the one or more first contacts and corresponding surfaces of the substrate and the rib face each other at a controlled gap height to define a fill-space. The adhesive is dispensed at a discrete point whereby the adhesive is drawn to fill the fill-space by capillary action.