A semiconductor device includes a lead frame; a circuit board located on the lead frame; a power device that includes a switching element and is mounted on the circuit board via a bump located between the power device and the circuit board; and a heat releasing member connected to the power device. The circuit board may be a multi-layer wiring board. The circuit board may include a capacitor element, a resistor element, an inductor element, a diode element and a switching element.

A bonding structure and a method for bonding components, wherein the bonding structure includes a nanoparticle preform. In accordance with embodiments, the nanoparticle preform is placed on a substrate and a workpiece is placed on the nanoparticle preform.

A laser welding machine includes: an elevator that is capable of sliding an elevating platform; a pressing actuator that is fixed to the elevating platform at a base part of the pressing actuator and has a tip slidably connected to the base part and pressing a conductive upper terminal toward a conductive lower terminal; a laser oscillator; a machining optical device that is fixed to the elevating platform and has a lens to focus the laser light emitted from the laser oscillator; a position detector that detects a vertical positioning of the pressing actuator; a counter that receives an output of the position detector and delivers position information; and a control circuit that controls, based on the received signal from the counter, the elevator, the pressing actuator, and the machining optical device, and controls operation of the laser oscillator.

A semiconductor module includes a first power semiconductor element having a first surface and a second surface. The semiconductor module also includes a second power semiconductor element having a first surface and a second surface. The semiconductor module also includes first, second, third, and fourth conductor plates, and a connecting part. The connecting part is integrally formed with the second conductor plate, extends toward the third conductor plate, and is connected to the third conductor plate.

A semiconductor device according to the present invention includes a plurality of semiconductor chips, a plate electrode disposed on the plurality of semiconductor chips for connecting the plurality of semiconductor chips, and an electrode disposed on the plate electrode. The electrode has a plurality of intermittent bonding portions to be bonded to the plate electrode and a protruded portion which is protruded erectly from the bonding portions. The protruded portion has an ultrasonic bonding portion which is parallel with the bonding portion and is ultrasonic bonded to an external electrode.

A combined packaged power semiconductor device includes flipped top source low-side MOSFET electrically connected to top surface of a die paddle, first metal interconnection plate connecting between bottom drain of a high-side MOSFET or top source of a flipped high-side MOSFET to bottom drain of the low-side MOSFET, and second metal interconnection plate stacked on top of the high-side MOSFET chip. The high-side, low-side MOSFET and the IC controller can be packaged three-dimensionally reducing the overall size of semiconductor devices and can maximize the chip's size within a package of the same size and improves the performance of the semiconductor devices. The top source of flipped low-side MOSFET is connected to the top surface of the die paddle and thus is grounded through the exposed bottom surface of die paddle, which simplifies the shape of exposed bottom surface of the die paddle and maximizes the area to facilitate heat dissipation.

Improvement in yield of a semiconductor device is obtained. In addition, increase in service life of a socket terminal is obtained. A projecting portion PJ1 and a projecting portion PJ2 are provided in an end portion PU of a socket terminal STE1. Thus, it is possible to enable contact between a lead and the socket terminal STE in which a large current is caused to flow, at two points by a contact using the projecting portion PJ1 and by a contact using the projecting portion PJ2, for example. As a result, the current flowing from the socket terminal STE1 to the lead flows by being dispersed into a path flowing in the projecting portion PJ1 and a path flowing in the projecting portion PJ2. Accordingly, it is possible to suppress increase of temperature of a contact portion between the socket terminal STE1 and the lead even in a case where the large current is caused to flow between the socket terminal STE1 and the lead.

An electronic power module, including at least one semiconductor component, which is arranged on a support, as well as a cooling element, which is in thermal contact with the semiconductor component, wherein the support includes a semiconductor material and, at the same time, serves as a cooling element.

A ground strap for grounding electrical cables for protection against at least one of EMI, RFI or ESD and method of construction thereof is provided. The ground strap has a wall with opposite edges extending along a lengthwise direction between opposite ends. The wall is formed from a plurality of interlaced filaments, with at least some of the plurality of interlaced filaments including a plurality of electrically conductive filaments interlaced in electrical communication with one another.

A semiconductor device includes: at least one power semiconductor element; a sealing resin disposed so as to seal the power semiconductor element; and a plurality of electrical terminals each electrically connected to the power semiconductor element and each including a protrusion protruding from a surface of the sealing resin. The protrusion includes a first part that is provided on a side of the sealing resin in a protrusion direction of the protrusion and of which a cross-section intersecting the protrusion direction has one of a circular shape and an oval shape.