Wafers and methods of forming solder balls include forming a final redistribution layer over terminal contact pad on a surface of a wafer. The wafer includes multiple bulk redistribution layers. A hole is etched in the final redistribution layer to expose the terminal contact pad. Solder is injected into the hole using an injection nozzle that is in direct contact with the final redistribution layer. The final redistribution layer is etched back. The injected solder is reflowed to form a solder ball.

A method of manufacturing a semiconductor package includes estimating an error in a solder ball attaching process, determining a specification of a ball tool and a method of the solder ball attaching process, based on the estimated error, manufacturing the ball tool according to the determined specification thereof, and performing the solder ball attaching process based on the method of the solder ball attaching process. The determining of the specification of the ball tool and the method of the solder ball attaching process includes determining a number of a plurality of holders in the ball tool and a position and a width of each of the plurality of holders, determining a number of a plurality of working regions of a substrate and a position and a width of each of the plurality of working regions, and dividing a substrate into the plurality of working regions.

An apparatus for mounting solder balls comprises a stage to support a substrate thereon, a mounting unit to mount solder balls on the substrate, and a solder ball mask between the mounting unit and the substrate. The solder ball mask includes a first face facing the substrate and a second face opposite to the first face. The solder ball mask has inner surfaces defining through-holes extending through a thickness of the solder ball mask from the second face to the first face. The apparatus causes the solder balls to move through separate, respective through-holes. Each of the through-holes includes a first opening defined in the first face and a second opening defined in the second face. A first spacing between adjacent first openings of the plurality of through-holes is different from a second spacing between adjacent second openings of the through-holes.

Sequential electrodeposition of metals into through-mask features on a semiconductor substrate is conducted such as to reduce the deleterious consequences of lipseal's pressure onto the mask material. In a first electroplating step, a first metal (e.g., nickel) is electrodeposited using a lipseal that has an innermost point of contact with the semiconductor substrate at a first distance from the edge of the substrate. In a second electroplating step, a second metal (e.g., tin) is electrodeposited using a lipseal that has an innermost point of contact with the semiconductor substrate at a greater distance from the edge of the substrate than the first distance. This allows to at least partially shift the lipseal pressure from a point that could have been damaged during the first electrodeposition step and to shield from electrolyte any cracks that might have formed in the mask material during the first electroplating step.

At least one circuit element may be formed on a front side of a ringed substrate, and the ringed substrate may be mounted on a mounting chuck. The mounting chuck may have an inner raised portion configured to receive the thinned portion of the substrate thereon, and a recessed ring around a perimeter of the mounting chuck configured to receive the outer ring of the ringed substrate therein. At least one solder bump may be formed that is electrically connected to the at least one circuit element, while the ringed wafer is disposed on the mounting chuck.

In conventional fluid discharge devices, a discharge head used should be increased in size according to increase in size of a workpiece such as silicon wafer. However, if the discharge head increases in length, a deformation amount of a mask used for discharging the fluid on the workpiece increases, thereby the discharging amount varies. Discharging the fluid in a reciprocating manner is performed using a fluid discharging device including a head unit having a width shorter than a length of the workpiece. A suction port having opening portions each having a slit shape are disposed on the both sides of the discharge nozzle in a vicinity of the discharge nozzle.

A solder connection may be surrounded by a solder locking layer (1210, 2210) and may be recessed in a hole (1230) in that layer. The recess may be obtained by evaporating a vaporizable portion (1250) of the solder connection. Other features are also provided.

To improve reliability of a semiconductor device, in a method of manufacturing the semiconductor device, a semiconductor substrate having an insulating film in which an opening that exposes each of a plurality of electrode pads is formed is provided, and a flux member including conductive particles is arranged over each of the electrode pads. Thereafter, a solder ball is arranged over each of the electrode pads via the flux member, and is then heated via the flux member so that the solder ball is bonded to each of the electrode pads. The width of the opening of the insulating film is smaller than the width (diameter) of the solder ball.

A false report on appearance inspection of a semiconductor device is prevented by suppressing variation in surface state of an electrodeposited gold electrode. In formation of an electrodeposited gold electrode, an electrodeposited gold electrode comprised of a plurality of electrodeposited gold layers in the stack is formed by alternately repeating a step of performing energization between an anode electrode and a cathode electrode provided in a treatment cup of a plating apparatus to cause crystal growth of an electrodeposited gold layer (energization ON), and a step of performing no energization between the anode electrode and the cathode electrode (energization OFF). Consequently, even if aging variation occurs in composition of the plating solution, variation in surface state of the electrodeposited gold electrode is suppressed, and a surface state with a surface roughness of, for example, about 0.025 rad can be maintained.

The inventive concept relates to a substrate cooling apparatus for cooling a substrate. The substrate cooling apparatus includes a chuck on which the substrate is placed and a cooling unit that cools the chuck. The cooling unit includes a heat dissipation plate that has the chuck placed on an upper surface thereof and that dissipates heat of the chuck.