An applying method includes the following steps. Firstly, a conductive adhesive including a plurality of conductive particles and an insulating binder is provided. Then, a carrier plate is provided. Then, a patterned adhesive is formed on the carrier plate by the conductive adhesive, wherein the patterned adhesive includes a first transferring portion. Then, a manufacturing device including a needle is provided. Then, the needle of the manufacturing device is moved to contact the first transferring portion. Then, the transferring portion is transferred to a board by the manufacturing device.

A liquid ejection device (1) comprising: a first tank (2) for retaining a liquid composition; a head (3) for ejecting the liquid composition; a first heater (4) for heating the liquid composition; a first channel (5); a second heater (6) for heating the liquid composition passing through the first channel (5) at a heating temperature higher than that of the first heater (4); a second channel (7); a second pump (8); and a first pump (9), wherein the temperature difference between the heating temperature of the second heater (6) and the heating temperature of the first heater (4) is 65 C. or less.

A method for producing a layer including a connecting medium on an assembly partner is provided. The method includes providing a carrier on which the connecting medium is applied. The connecting medium contains a metal in the form of a multiplicity of metal particles. The assembly partner is placed on the connecting medium located on the carrier and pressed onto the connecting medium located on the carrier, so that a layer of the connecting medium adheres to the assembly partner. The assembly partner together with the layer adhering thereto is removed from the carrier. By means of a gas flow, edges of the layer, at which the latter extends laterally beyond the assembly partner, are removed so that a layer residue of the layer remains adhering to the assembly partner.

A thermal interface material and systems and methods for forming a thermal interface material include depositing a layer of a composite material, including at least a first material and a second material, the first material including a carrier fluid and the second material including a filler particle suspended within the first material. A particle manipulator is positioned over the layer of the composite material, the particle manipulator including at least one emitter to apply a particle manipulating field to bias a movement of the filler particles. The second material is redistributed by applying the particle manipulating field to interact with the second material causing the second material to migrate from a surrounding region in the composite material into a high concentration region in the composite material to form a customized thermal interface such that the high concentration region is configured and positioned corresponding to a hotspot.

A semiconductor device includes a single lead frame, a semiconductor element, and a mold material. The semiconductor element is joined onto one main surface of the lead frame. The lead frame includes a die-attach portion, a signal terminal portion, and a ground terminal portion. The die-attach portion, the signal terminal portion, and the ground terminal portion are disposed directly below the mold material so as to be arranged in a direction along one main surface. A groove portion is provided by partially removing the lead frame so as to allow the groove portion to pass therethrough, the groove portion being provided between the die-attach portion and the ground terminal portion adjacent to each other in the lead frame and between the signal terminal portion and the ground terminal portion adjacent to each other in the lead frame.

[Object] To provide a method and an apparatus for manufacturing electronic devices by transferring the device chips from one substrate for producing device chips to the other substrate for a product having a large display.

[Means of Realizing the Object] A substrate having a plurality of device chips is brought into contact with a first drum including a selective adhesive region, the device chips are transferred by making the device chips be adhered to the selective adhesive layer of the first drum and separating at least part of the device chips from the substrate by rotating the first drum, then, the device chips on the first drum are made to be come into contact with the other substrate for the product, and the device chips are transferred to the substrate for the product by rotating the first drum. Additionally, the front-and-rear relation for the surfaces may be inversed by, after the device chips on the first drum are transferred to the second drum, transferring the device chips on the second drum to the substrate for the product.

Deformation of substrates after the substrates are bonded can be suppressed. A bonding apparatus includes a first holding unit configured to attract and hold a first substrate from above; a second holding unit provided under the first holding unit and configured to attract and hold a second substrate from below; and a striker configured to press a central portion of the first substrate from above and bring the first substrate into contact with the second substrate. The first holding unit is configured to attract and hold a partial region of a peripheral portion of the first substrate, and the first holding unit attracts and holds the region which intersects with a direction, among directions from the central portion of the first substrate toward the peripheral portion thereof, in which a bonding region between the first substrate and the second substrate is expanded faster.

An electronic device includes a substrate including first and second metal regions, a first passive device that includes a metal joining surface and is arranged on the substrate with the metal joining surface of the first passive device facing first metal region, a semiconductor die that includes a metal joining surface and is arranged on the substrate with the metal joining surface of the semiconductor die facing the second metal region, a first soldered joint between the metal joining surface of the first passive device and the first metal region; and a second soldered joint between the metal joining surface of the semiconductor die and the second metal region, wherein a minimum thickness of the first soldered joint is greater than a maximum thickness of the second soldered joint.

A lid attach process includes dipping a periphery of a lid in a dipping tank of adhesive material such that the adhesive material attaches to the periphery of the lid. The lid attach process further includes positioning the lid over a die attached to a substrate using a lid carrier, wherein the periphery of the lid is aligned with a periphery of the lid carrier. The lid attach process further includes attaching the lid to the substrate with the adhesive material forming an interface with the substrate. The lid attach process further includes contacting a thermal interface material (TIM) on the die with the lid.

A manufacturing apparatus of a semiconductor device includes: multiple processing heads provided apart from each other in order to perform predetermined processing in different positions on a common lead frame, the processing heads respectively including cameras; and a controller controlling driving of the processing heads, the controller positioning each of the processing heads at a position where at least an optical offset is canceled out. The controller takes an image of a paste of one island by the cameras and acquires optical inspection images respectively corresponding to the processing heads before the positioning, and calculates, as the optical offset, an amount of difference between the processing heads in a relative positional relationship between the island and the paste shown in the optical inspection images.