A semiconductor device includes an interposer disposed on a substrate. A first major surface of the interposer faces the substrate. A system on a chip is disposed on a second major surface of the interposer. The second major surface of the interposer opposes the first major surface of the interposer. A plurality of first passive devices is disposed in the first major surface of the interposer. A plurality of second passive devices is disposed on the second major surface of the interposer. The second passive devices are different devices than the first passive devices.

A mounting structure for a heater element includes a heater element having a surface to be cooled, a board on which the heater element is mounted, a cooling member that cools the surface to be cooled of the heater element mounted on the board, and a supporting member temporarily fixed to the board, the supporting member temporarily fixing the heater element.

A transistor module assembly includes a longitudinally extending load bus bar, a longitudinally extending feed bus bar parallel to the load bus bar, and at least one transistor package operatively connected to the load and feed bus bars. The transistor package includes a drain surface and a source lead. The drain surface is operatively connected to the feed bus bar for receiving current therefrom. The source lead is operatively connected to the load bus bar for dissipating current from the transistor package to the load bus bar.

A method includes forming a release film over a carrier, attaching a device over the release film through a die-attach film, encapsulating the device in an encapsulating material, performing a planarization on the encapsulating material to expose the device, detaching the device and the encapsulating material from the carrier, etching the die-attach film to expose a back surface of the device, and applying a thermal conductive material on the back surface of the device.

A semiconductor package includes a silicon substrate including a cavity and a plurality of through holes spaced apart from the cavity, a first semiconductor chip in the cavity, a plurality of conductive vias in the plurality of through holes, a first redistribution layer on the silicon substrate and connected to the first semiconductor chip and the conductive vias, and a second redistribution layer below the silicon substrate and connected to the first semiconductor chip and the plurality of conductive vias.

A semiconductor device includes a substrate, a wire portion, a bonding portion, a semiconductor element, and an encapsulation resin. The substrate includes substrate main and back surfaces facing in opposite directions. The wire portion includes a conductive layer formed on the substrate main surface. The bonding portion includes a first plated layer formed on an upper surface of the wire portion and a first solder layer formed on an upper surface of the first plated layer. The semiconductor element includes an element main surface facing the substrate main surface, an element electrode formed on the element main surface, and a second plated layer formed on a lower surface of the element electrode and bonded to the first solder layer. The encapsulation resin covers the semiconductor element. The bonding portion is larger than the element electrode as viewed in a thickness-wise direction that is perpendicular to the substrate main surface.

A bus assembly includes a planar first bus, a second bus including a first planar bus section on the first bus and a second planar bus section connected to the first planar bus section and offset from the first planar bus section, and a third bus comprising a third planar bus section disposed between the first bus and the second planar bus section, and a fourth planar bus section connected to the third planar bus section, offset from third planar bus section, and disposed on the first planar bus section.

A method for manufacturing a package structure includes providing a carrier board; providing at least one die having a top surface, a bottom surface, and a side surface on the carrier board; and forming a protective layer to cover at least a portion of the side surface of the die. The die includes a substrate, a semiconductor layer, a gate structure, a source structure and a drain structure, at least one dielectric layer, and at least one pad. The semiconductor layer is disposed on the substrate. The gate structure is disposed on the semiconductor layer. The source and the drain structures are disposed on opposite sides of the gate structure. The dielectric layer covers the gate, source, and drain structures. The pad is disposed on the dielectric layer and penetrates through the dielectric layer to electrically contact with the gate, source or drain structure.

Presented herein is a WLCSP intermediate structure and method forming the same, the method comprising forming a first redistribution layer (RDL) on a carrier, the first RDL having mounting pads disposed on the first RDL, and mounting interposer dies on a second side of the first RDL. A second RDL is formed over a second side of the interposer dies, the second RDL having a first side adjacent to the interposer dies, one or more lands disposed on the second RDL, at least one of the one or more lands in electrical contact with at least one of the interposer dies or at least one of the mounting pads. A molding compound is formed around the interposer dies and over a portion of the first RDL prior to the forming the second RDL and the second RDL is formed over at least a portion of the molding compound.

A system for driving power devices is provided, and the system includes a heat dissipation plate, semiconductor modules, gate plates, a control board, a bridge module, and a terminal module. The semiconductor modules are disposed on the heat dissipation plate. Each gate plate is disposed on the corresponding semiconductor module and includes first driving terminal. The control board is disposed on the heat dissipation plate. The bridge module and the terminal module are electrically connected to each other, disposed on the control board, and arranged sequentially in a direction from a center to an edge of the control board. The bridge module includes a plurality of driving bridge plates, and each driving bridge plate is electrically coupled to the control board. The terminal module includes a plurality of second driving terminals, and each second driving terminal is electrically connected to the corresponding driving bridge plate and first driving terminal.