Aspects of the embodiments are directed to non-contact systems, methods and devices for optical detection of objects in space at precise angles. This method involves the design and fabrication of photodiode arrays for measuring angular response using self-aligned Schottky platinum silicide (PtSi) PIN photodiodes (PN-diodes with an intrinsic layer sandwiched in between) that provide linear angular measurements from incident light in multiple dimensions. A self-aligned device is defined as one in which is not sensitive to photomask layer registrations. This design eliminates device offset between “left” and right” channels for normal incident light as compared to more conventional PIN diode constructions.

A semiconductor device includes a photosensitive element, an insulating region, and a quench element. The photosensitive element includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type on the first semiconductor region, a third semiconductor region of a second conductivity type on the second semiconductor region, and a fourth semiconductor region of the second conductivity type around the second and third semiconductor regions. An impurity concentration of the first conductivity type in the second semiconductor region is higher than that in the first semiconductor region. An impurity concentration of the second conductivity type in the fourth semiconductor region is lower than that of the third semiconductor region. The insulating region is around the first and fourth semiconductor regions. The quench element is electrically connected to the third semiconductor region.

Provided are a detection substrate and a manufacturing method therefor, and a ray detection apparatus. The detection substrate includes: a driving back plate, wherein the driving back plate is provided with a plurality of detection regions, and each detection region includes a thin-film transistor located on a base substrate, and a first bonding electrode that is located on the thin-film transistor and is electrically connected to a source electrode of the thin-film transistor; and a plurality of avalanche photodiodes, wherein the plurality of avalanche photodiodes are arranged in the detection regions one by one, and a second bonding electrode that is fixedly connected to the first bonding electrode is arranged on the side of each avalanche photodiode that faces the driving back plate.

A semiconductor substrate including a first main surface and a second main surface opposing each other is provided. The semiconductor substrate includes a first semiconductor region of a first conductivity type. The semiconductor substrate includes a plurality of planned regions where a plurality of second semiconductor regions of a second conductivity type forming pn junctions with the first semiconductor region are going to be formed, in a side of the second main surface. A textured region is formed on surfaces included in the plurality of planned regions, in the second main surface. The plurality of second semiconductor regions are formed in the plurality of planned regions after forming the textured region. The first main surface is a light incident surface of the semiconductor substrate.

According to an aspect, a detection device includes a substrate and a plurality of photodiodes arranged on the substrate. Each of the photodiodes comprises a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer stacked on the substrate. Each of the photodiodes includes a plurality of first regions in each of which the p-type semiconductor layer, the i-type semiconductor layer, and the n-type semiconductor layer are stacked so as to be directly in contact with one another, and a second region in which at least the p-type semiconductor layer and the i-type semiconductor layer are stacked so as to be separate from each other. Adjacent first regions included in the plurality of first regions are coupled together by at least the p-type semiconductor layer.

A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurality of electrodes corresponding to the respective channels are arranged on a third principal surface side and so that a signal processing unit for processing output signals from the respective channels is arranged on a fourth principal surface side. In a semiconductor substrate, through-hole electrodes electrically connected to the signal lines are formed for the respective channels. The through-hole electrodes and the electrodes are electrically connected through bump electrodes.

An imaging system includes a first illuminator that irradiates a subject with light whose intensity varies over time; and a first imaging device that includes a first imaging cell having a variable sensitivity, and a first sensitivity control line electrically connected to the first imaging cell. The first imaging cell includes a photoelectron conversion area that receives light from the subject to generate a signal charge, and a signal detection circuit that detects the signal charge. During an exposure period, the first sensitivity control line supplies to the first imaging cell a first sensitivity control signal having a waveform expressed by a first function that takes only positive values by adding a first constant to one basis from among bases of a system of functions constituting an orthogonal system

The Vertical System Integration (VSI) invention herein is a method for integration of disparate electronic, optical and MEMS technologies into a single integrated circuit die or component and wherein the individual device layers used in the VSI fabrication processes are preferably previously fabricated components intended for generic multiple application use and not necessarily limited in its use to a specific application. The VSI method of integration lowers the cost difference between lower volume custom electronic products and high volume generic use electronic products by eliminating or reducing circuit design, layout, tooling and fabrication costs.

In one embodiment, a photo detector is provided with a semiconductor layer having a light receiving surface, a first reflective material which is provided on a side opposite to the light receiving surface side of the semiconductor layer and reflects a light incident from the light receiving surface, and a slope portion provided on a side surface of the semiconductor layer.

A photo detection element includes: a substrate; a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers that are stacked such that lattices of the graphene layers are randomly displaced from each other in plan view; a first electrode that is in contact with the light-receiving layer; and a second electrode that is in contact with the light-receiving layer, a material of the second electrode differing from a material of the first electrode.