An imaging apparatus with reduced flare includes an imaging structure including a solid state imaging element (1) and a transparent substrate (2) disposed on the imaging element. The imaging apparatus includes a circuit substrate (7) including a circuit, a spacer (10) including at least one fixing portion (11) that guides the imaging structure to a desired position on the circuit substrate (7) when the imaging structure is mounted on the circuit substrate, and a light absorbing material (13) disposed on at least one side surface of the imaging structure such that that light absorbing material (13) is between the imaging structure and the at least one fixing portion.

A 3D micro display, the 3D micro display including: a first level including a first single crystal layer, the first single crystal layer includes a plurality of LED driving circuits; a second level including a first plurality of light emitting diodes (LEDs), the first plurality of LEDs including a second single crystal layer; a third level including a second plurality of light emitting diodes (LEDs), the second plurality of LEDs including a third single crystal layer, where the first level is disposed on top of the second level, where the second level includes at least ten individual first LED pixels; and a bonding structure, where the bonding structure includes oxide to oxide bonding.

Provided are an imaging device and an electronic device configured such that deterioration in imaging performance due to high-angle incident light can be inhibited. The imaging device includes: a semiconductor substrate including a plurality of photoelectric conversion elements; a plurality of color filters that are provided on the semiconductor substrate and face each of the plurality of photoelectric conversion elements; and a partition wall that is provided on the semiconductor substrate and provides separation between one color filter and another color filter adjacent to each other among the plurality of color filters. The partition wall includes a first metal layer, a translucent first partition wall layer that covers a side surface of the first metal layer, and a translucent second partition wall layer located between the first metal layer and the first partition wall layer. A refractive index of the second partition wall layer is larger than a refractive index of the first partition wall layer.

A semiconductor device includes an image sensor structure and a periphery device structure. The image sensor structure includes a first semiconductor substrate, a first interconnect structure, a radiation device, a transfer gate transistor electrically coupled to the radiation device, a floating diffusion region electrically coupled to the transfer gate, and a first capacitor disposed in the first interconnect structure. The transfer gate transistor electrically interconnects and disconnects the radiation device and the floating diffusion region. The periphery device structure includes a second interconnect structure disposed on the first interconnect structure, a second semiconductor substrate disposed on the second interconnect structure, a plurality of logic devices disposed in the second semiconductor substrate, and a second capacitor disposed in the second interconnect structure. The first capacitor and the second capacitor are electrically coupled to the floating diffusion region.

In general, the disclosure describes a sensor comprising a photo-sensitive silicon substrate configured to detect ultraviolet (UV), visible, and near-infrared (NIR) light and an upconversion layer comprising a plurality of crystals configured to convert short wave infrared light to UV, visible, or NIR light. An example sensor includes an upconversion layer comprising a plurality of crystals configured to convert electromagnetic radiation comprising a first range of wavelengths greater than 1100 nm to electromagnetic radiation comprising a second range of wavelengths less than or equal to 1100 nm and a photo-sensitive silicon substrate configured to detect the electromagnetic radiation comprising the second range of wavelengths.

An optical fingerprint sensor with spoof detection includes a plurality of lenses; a pixel array including a plurality of first photodiodes, a line between a center of each first photodiode and an optical center of each lens forms an optical axis; at least one apertured baffle-layer positioned between the image sensor and the plurality of lenses, each having a respective plurality of aperture stops, each aperture stop being center-aligned with the optical axis; and a plurality of second photodiodes intercalated with the plurality of first photodiodes; and a color filter layer between the pixel array and the plurality of lenses, said color filter layer includes a plurality of color filters positioned such that each second photodiode is configured to detect electromagnetic energy having passed through lens, a color filter, and at least one aperture stop not aligned along the optical axis.

The present disclosure relates to a camera module capable of achieving a smaller height, a method of manufacturing a camera module, an imaging apparatus, and an electronic apparatus. An imaging device having its imaging surface bonded to a provisional substrate is attached, and the imaging device in that state is joined to a substrate via an electrode having a TSV structure. After the provisional substrate is detached, an IR cut filter (IRCF) on which a light blocking film is printed or jet-dispensed in a region other than the effective pixel region is bonded to the imaging surface via a transparent resin. Because of this, there is no need to provide any sealing glass in the stage before the imaging surface, and the optical length of the lens can be shortened. Thus, a smaller height can be achieved. The present disclosure can be applied to camera modules.

A solid-state imaging device including a photoelectric conversion film provided over a plurality of pixels, a first electrode electrically coupled to the photoelectric conversion film and provided to each pixel, a second electrode opposed to the first electrode, the photoelectric conversion film being interposed between the second electrode and the first electrode, a first electric charge accumulation section, a reset transistor that is provided to each pixel, and an electric potential generator that applies, during a period in which the signal electric charges are accumulated in the first electric charge accumulation section, an electric potential VPD to the first electrode of each of at least one or more pixels, an electric potential difference between the first electrode and the second electrode when the electric potential VPD is applied to the first electrode being smaller than an electric potential difference when a reset electric potential is applied to the first electrode.

An image sensor is disclosed. In some implementations, the image sensor includes a substrate including one or more photoelectric conversion elements arranged in the substrate and structured to convert light into electrical signals representing an image carried by the light, and a plurality of metal layers arranged at different distances from a surface of the substrate and located below the one or more photoelectric conversion elements, each of the metal layers including one or more metal patterns. The one or more metal patterns of the plurality of metal layers are arranged in a concave shape facing the photoelectric conversion element such that incident light reflected by metal layers converges toward the photoelectric conversion element.

Detectors and detection systems are disclosed. According to certain embodiments, a detector comprises a substrate comprising a plurality of sensing elements including a first sensing element and a second sensing element, wherein at least the first sensing element is formed in a triangular shape. The detector may include a switching region configured to connect the first sensing 5 element and the second sensing element. There may also be provided a plurality of sections including a first section connecting a first plurality of sensing elements to a first output and a second section connecting a second plurality of sensing elements to a second output. The section may be provided in a hexagonal shape.