A solid-state imaging device according to the present disclosure includes a light-receiving substrate, a circuit board, and a plurality of first connections. The light-receiving substrate includes a plurality of light-receiving circuits provided with photoelectric conversion elements. The circuit board is directly bonded to the light-receiving substrate and includes a plurality of address event detection circuits that detects individual changes in voltages output from the photoelectric conversion elements of the plurality of light-receiving circuits. The plurality of first connections is provided at a joint between the light-receiving substrate and the circuit board to electrically connect the light-receiving circuits and the address event detection circuits corresponding to each other.

In an embodiment a method for manufacturing an image sensor includes forming of a plurality of microlenses at a first resin layer, forming a mask on top of and in contact with the first resin layer, the mask comprising a second resin; and chemical plasma etching the first resin layer through the mask.

In an embodiment a pixel arrangement includes a photodetector configured to accumulate charge carriers by converting electromagnetic radiation, a transfer transistor electrically coupled to the photodetector, a diffusion node electrically coupled to the transfer transistor, a reset transistor electrically coupled to the diffusion node and to a pixel supply voltage and a sample-and-hold stage including at least a first capacitor and a second capacitor, an input of the sample-and-hold stage being electrically coupled to the diffusion node via an amplifier, wherein the transfer transistor is configured to be pulsed to different voltage levels for transferring parts of the accumulated charge carriers to the diffusion node, wherein at least the second capacitor is configured to store a low conversion gain signal representing a first part of the accumulated charge carriers, and wherein the first capacitor is configured to store a high conversion gain signal representing a remaining part of the accumulated charge carriers.

A semiconductor device is provided. The device comprises first semiconductor wafer comprising first BEOL structure disposed on first side of first substrate, the first BEOL structure comprising first metallization layer disposed over the first substrate, second metallization layer disposed over the first metallization layer, first storage device disposed between the first and second metallization layers, and first transistor contacting the first storage device, and a first bonding layer disposed over the first BEOL structure. The device also comprises second semiconductor wafer comprising second BEOL structure disposed on first side of second substrate, the second BEOL structure comprising third metallization layer disposed over the second substrate, fourth metallization layer disposed over the third metallization layer, second storage device disposed between the third and fourth metallization layers, and second transistor contacting the second storage device, and second bonding layer disposed over the second BEOL structure and contacting the first bonding layer.

Methods and apparatus for a detector system having a photodetector and an amplifier to amplify the photodetector signal. A discriminator generates an active output signal when the output from the amplifier is greater than a threshold. An injection circuit is coupled to the input of the amplifier. The injection circuit is configured to selectively inject a test pulse that mimics a pulse from the photodetector for verifying operation of the detector system.

According to one embodiment, a display device includes a first substrate, a second substrate, a liquid crystal layer and an illumination device. The first substrate includes a base, a sensor, a sensor circuit and a sensor light-shielding layer. The sensor is located between the base and the liquid crystal layer in a display area that includes pixels, and outputs a detection signal corresponding to light becoming incident from a side of the liquid crystal layer. The sensor circuit includes a switching element and is connected to the sensor. The sensor light-shielding layer is opposed to a channel area formed in a semiconductor layer included in the switching element, and blocks light from the illumination device on the channel area.

A detection device includes a plurality of detection elements that are arranged in a matrix having a row-column configuration in a detection area, and each comprise a photoelectric conversion element to which a reverse bias voltage is configured to be applied when detection is performed, and an initialization circuit configured to apply an initialization voltage higher than the reverse bias voltage to the photoelectric conversion element before the reverse bias voltage is applied to the photoelectric conversion element.

A detection device includes a plurality of detection elements arranged in a matrix having a row-column configuration in a detection area, a plurality of scan lines each coupled to the detection elements arranged in a first direction, a drive circuit configured to drive the scan lines, a plurality of output signal lines each coupled to the detection elements arranged in a second direction different from the first direction, and a detection circuit configured to be supplied with detection signals from the detection elements through the output signal lines.

A scintillator panel is provided. The scintillator panel comprises: a support; a scintillator configured to generate light in accordance with incident radiation; a light reflecting layer arranged between the support and the scintillator and configured to reflect the light; a semi-transmissive layer arranged between the light reflecting layer and the scintillator and configured to reflect part of the light and transmit other part of the light; and an optical adjustment layer arranged between the light reflecting layer and the semi-transmissive layer and configured to make an optical distance between the light reflecting layer and the semi-transmissive layer become a length with which the light resonates.

The present specification provides a detector for an X-ray imaging system. The detector includes at least one high resolution layer having high resolution wavelength-shifting optical fibers, each fiber occupying a distinct region of the detector, at least one low resolution layer with low resolution regions, and a single segmented multi-channel photo-multiplier tube for coupling signals obtained from the high resolution fibers and the low resolution regions.