An image sensor includes a substrate having a plurality of pixel regions and a deep device isolation pattern disposed in the substrate between the pixel regions. The pixel regions include first, second, third, and fourth pixel regions, which are adjacent to each other in first and second directions. The deep device isolation pattern includes first portions interposed between the first and second pixel regions and between the third and fourth pixel regions and spaced apart from each other in the second direction, and second portions interposed between the first and third pixel regions and between the second and fourth pixel regions and spaced apart from each other in the first direction. The first pixel region includes a first extended active pattern, which is extended to the second pixel region in the first direction and is disposed between the first portions of the deep device isolation pattern.

Provided is an image sensor including a color separating lens array and an electronic device including the color sensor. The image sensor includes a sensor substrate including a plurality of first pixels and a plurality of second pixels and having a two-dimensional array of unit pixels including the first pixel and the second pixel; and a color separating lens array configured to concentrate light of a first wavelength on each of the first pixels, and concentrate light of a second wavelength on each of the second pixels, wherein at least one pixel of the unit pixel includes a plurality of light sensing cells for independently sensing light by being electrically separated by a deep trench isolation (DTI) structure, and the color separating lens array includes a nanopost array, which does not include a nanopost provided on the DTI structure.

Provided is an image sensor including: a substrate including a first pixel domain and a second pixel domain that are adjacent to each other in a first direction, the first pixel domain including first pixels and the second pixel domain including second pixels; a first color filter provided on a first surface of the substrate and vertically overlapping the first pixels; a first microlens provided on the first color filter and each of the first pixels; and a second microlens provided on the first surface of the substrate and vertically overlapping at least a portion of each of the second pixels, wherein a second refractive index of the second microlens is greater than a first refractive index of the first microlens, and wherein a level difference between an uppermost part of the first microlens and an uppermost part of the second microlens is within about 2% of a maximum height of the first microlens.

An image sensor comprises a first and second chips. The first chip includes a first semiconductor substrate, a photoelectric conversion layer in the first semiconductor substrate, a color filter, a micro lens, a first transistor adjacent to the photoelectric conversion layer, a first insulating layer, and a first metal layer in the first insulating layer and connected to the first transistor. The second chip includes a second insulating layer, a second semiconductor substrate, a second transistor on the second semiconductor substrate, a second metal layer in the second insulating layer and connected to a gate structure of the second transistor through a gate contact, a landing metal layer below the second metal layer, and a through via in direct contact with the landing metal layer and vertically passing through the second semiconductor substrate. A width of the through via becomes narrower as the width approaches the third surface.

A photoelectric conversion device includes a substrate provided with pixels each including a photoelectric converter that accumulates charge generated by an incidence of light, a charge holding portion that holds charge transferred from the photoelectric converter, and an amplifier unit that includes an input node that receives charge transferred from the charge holding portion, a metal film disposed over a side of a first surface of the substrate so as to cover at least the charge holding portion, and a trench structure provided in the substrate on the side of the first surface of the substrate. The photoelectric conversion device is configured such that the light is incident from the side of the first surface of the substrate. The trench structure is disposed between the photoelectric converter and the charge holding portion of a first pixel.

A method of fabricating an image sensor includes forming a semiconductor substrate of a first conductivity type, forming a pixel isolation trench in in the semiconductor substrate to define pixel regions, forming a liner insulating layer in the pixel isolation trench, doping the liner insulating layer with dopants of a first conductivity type, forming a semiconductor layer on the liner insulating layer to fill the pixel isolation trench after the doping of the dopants, and performing a thermal treatment process on the semiconductor substrate.

A backside illuminated image sensor, including a semiconductor layer, a first gate structure, and a light sensing device, is provided. The semiconductor layer has a first surface and a second surface opposite to each other. The first gate structure is disposed on the second surface. The light sensing device is located in the semiconductor layer. The light sensing device extends from the first surface to the second surface.

The misalignment between light reception lenses and light reception elements in a lens integrated light reception element for converting a plurality of optical signals with different wavelengths into electric signals is easily inspected. The lens integrated light reception element includes one or more light reception lenses that receive the optical signals, one or more light reception elements each disposed on a main axis of the light reception lens and converting the optical signal into the electric signal, one or more inspection pinholes through which illumination light passes, and one or more inspection lenses each including a main axis parallel to the main axis of the light reception lens and converging the illumination light having passed through the inspection pinhole.

The incidence of incident light transmitted through a photoelectric conversion unit onto a charge holding unit, a pixel in the adjacency, and the like can be blocked in a pixel. An image sensor includes a pixel, a wiring layer, and an incident light attenuation unit. The pixel includes a photoelectric conversion unit that is formed in a semiconductor substrate and performs photoelectric conversion based on incident light, and a pixel circuit that generates an image signal according to a charge generated by the photoelectric conversion. The wiring layer is arranged on a surface of the semiconductor substrate different from a surface onto which the incident light is incident, and transports either the image signal or a signal applied to the pixel circuit. The incident light attenuation unit attenuates the incident light transmitted through the photoelectric conversion unit.

A solid-state image capturing device according to the present disclosure includes an image capturing element, a light transmitting member, a support member, a sealing resin member, and a wall member. The image capturing element is mounted on a substrate. The support member is arranged in a part of an outer-peripheral portion of the image capturing element, the outer-peripheral portion surrounding a light receiving unit of the image capturing element. The light transmitting member is supported by the support member. The sealing resin member is arranged in a peripheral portion of the image capturing element. The wall member is provided between the sealing resin member and a part of the outer-peripheral portion of the image capturing element, the part excluding a part in which the support member is arranged.