An optoelectronic device comprises an epitaxial stack, comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a trench exposing a portion of the first semiconductor layer; a first insulating layer formed on a side wall of the trench to electrically insulate from the active layer and the second semiconductor layer; a first electrode formed on the trench; a second electrode formed on the second semiconductor layer; a supporting device covering the epitaxial stack; an optical layer covering the first electrode and the second electrode, comprising a plurality of openings corresponding to positions of the first electrodes and the second electrodes; a fifth electrode electrically connected with the first electrode; and a sixth electrode electrically connected with the second electrode, wherein the fifth electrode and the sixth electrode each comprises a side comprising a length longer that of an edge of the epitaxial stack.

An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

An LED display driven by a dual-negative-voltage power supply is provided. The LED display includes a power supply interface and a display module. The power supply interface includes a first electrode, a second electrode, and a third electrode. The display module includes a substrate, the substrate is provided with a connection terminal having a first port, a second port, and a third port. The first electrode is coupled with the first port via a first wiring harness. The second electrode is coupled with the second port via a second wiring harness. The third electrode is coupled with the third port via a third wiring harness. A potential difference between the first electrode and the second electrode provides a first voltage. A potential difference between the first electrode and the third electrode provides a second voltage. The display module is configured to be powered with the first and second voltages.

A semiconductor light-emitting device includes a junction between doped semiconductor layers, a first set of multiple independent contacts connected to a first doped layer and a second set of one or more contacts connected to the second doped layer. Multiple conductive vias connect the independent contacts to the first doped layer, enabling differing corresponding via currents to be applied to the first doped layer through the vias independent of one another. A spatial distribution of via currents among the multiple vias can be selected to yield a corresponding spatial distribution of emission intensity. Alteration of the via current distribution results in corresponding alteration of the emission intensity distribution; such alterations can be implemented dynamically. Multiple devices can be arranged as a light-emitting array.

Provided are a display apparatus and a method of manufacturing the same. The display apparatus includes a support substrate, a driving layer provided on the support substrate and including a driving element configured to apply power to a pixel electrode, and a light-emitting layer provided on the driving layer.

Provided is a display device including a substrate, a first electrode disposed on the substrate, a second electrode disposed on the substrate and spaced apart from the first electrode, a plurality of first sub-insulating layers extending in a first direction, disposed on the substrate and on the first and second electrodes, and arranged in a second direction crossing the first direction, and a plurality of light emitting elements disposed between the first sub-insulating layers and electrically connected to the first electrode and the second electrode.

A light-emitting device includes a mounting substrate having a first surface and a second surface opposite to the first surface, the mounting substrate having a first end portion at an end of the mounting substrate; light-emitting elements mounted on the first surface of the mounting substrate other than the first end portion; first terminals provided on the first surface at the first end portion of the mounting substrate and connected to the light-emitting elements; and second terminals provided on the second surface at the first end portion of the mounting substrate and connected to the light-emitting elements.

A method of forming a monolithic LED precursor is provided. The method comprises: providing a substrate having a top surface; forming a first semiconductor layer comprising a Group III-nitride on the top surface of the substrate; selectively masking the first semiconductor layer with a LED mask layer, the LED mask layer comprising an aperture defining a LED well through a thickness of the LED mask layer to an unmasked portion of the first semiconductor layer, the LED well comprising LED well sidewalls extending from a top surface of the first semiconductor layer to a top surface of the LED mask layer; and selectively forming a monolithic LED stack within the LED well on the unmasked portion of the first semiconductor layer. The monolithic LED stack comprises a n-type semiconductor layer comprising a Group III-nitride formed on the first semiconductor layer, an active layer formed on the first semiconductor layer comprising one or more quantum well sub-layers, the active layer comprising a Group III-nitride, and a p-type semiconductor layer comprising a Group III-nitride formed on the second semiconductor layer. The LED stack sidewalls of the monolithic LED stack extend from the top surface of the first semiconductor layer conform to the LED well sidewalls of the LED mask layer.

A display device and a method of fabricating the same are provided. The display device includes a substrate, a first electrode on the substrate, a second electrode on the substrate and spaced apart from the first electrode, a plurality of light emitting elements, at least a portion of each of which is between the first electrode and the second electrode, and contact electrodes on the first electrode, the second electrode and the light emitting elements, the contact electrodes including a conductive polymer, wherein the contact electrodes include a first contact electrode which contacts an end portion of a first portion of the light emitting elements and the first electrode and a second contact electrode which contacts an end portion of a second portion of the light emitting elements, and the second electrode and is spaced apart from the first contact electrode.

An optical filter includes a substrate, a filter layer on the substrate and including color filters, and a light-converting layer over the filter layer and including light-converting portions respectively corresponding to the color filters. A low refractive index layer is between the filter layer and the light-converting layer and has a refractive index less than a refractive index of the light-converting layer. A first capping layer is between the low refractive index layer and the light-converting layer and has a refractive index ranging between the refractive index of the light-converting layer and the refractive index of the low refractive index layer.