The disclosed examples relate to various implementations of a micro-light emitting diode upon which is built a controllable variable optic to provide a chip-scale light emitting device. An example of the controllable variable optic described herein is a controllable electrowetting structure having a leak-proof sealed cell with a first fluid having a first index of refraction and a second fluid having a second index of refraction. The controllable electrowetting structure may be integrally formed on or in a substrate or semiconductor material associated with the micro-light emitting diode in alignment with one or more of the light emitting diodes of the micro-LED device to provide a controllable lighting distribution.

A display device includes a first switching element including a second electrode and a first gate electrode, a second switching element including a third electrode connected with the first gate electrode, a third switching element including a fifth electrode connected with the second electrode, and sixth electrode, a fourth switching element including a seventh electrode connected with the second electrode, and an eighth electrode, a fifth switching element including a ninth electrode connected with the second electrode, and a tenth electrode, a first light emitting diode connected with the sixth electrode and the eighth electrode, a second light emitting diode connected with the eighth electrode and the sixth electrode, and a switch selectively connecting a common power source line with the sixth electrode or the eighth electrode. The first light emitting diode and the second light emitting diode have different polarities from each other with respect to a same direction.

A method of manufacturing a LED precursor and a LED precursor is provided. The LED precursor is manufactured by forming a monolithic growth stack having a growth surface and forming a monolithic LED stack on the growth surface. The monolithic growth stack comprises a first semiconducting layer comprising a Group III-nitride, a second semiconducting layer, and third semi-conducting layer. The second semiconducting layer comprises a first Group III-nitride including a donor dopant such that the second semiconducting layer has a donor density of at least 5×1018 cm-3. The second semiconducting layer has an areal porosity of at least 15% and a first in-plane lattice constant. The third semiconducting layer comprises a second Group III-nitride different to the first Group-III-nitride. The monolithic growth stack comprises a mesa structure comprising the third semiconducting layer such that the growth surface comprises a mesa surface of third semiconducting layer and a sidewall surface of the third semiconducting layer encircling the mesa surface. The sidewall surface of the third semiconducting layer is inclined relative to the mesa surface. The mesa surface of the third semiconducting layer has a second in-plane lattice constant which is greater than the first in-plane lattice constant.

A method of forming a strain relaxation layer in an epitaxial crystalline structure, the method comprising: providing a crystalline template layer comprising a material with a first natural relaxed in-plane lattice parameter; forming a first epitaxial crystalline layer on the crystalline template layer, wherein the first epitaxial crystalline layer has an initial electrical conductivity that is higher than the electrical conductivity of the crystalline template layer; forming a second epitaxial crystalline layer on the first epitaxial crystalline layer, wherein the second epitaxial crystalline layer has an electrical conductivity lower than the initial electrical conductivity of the first epitaxial crystalline layer and comprises a material with a second natural relaxed in-plane lattice parameter that is different to the first natural relaxed in-plane lattice parameter of the crystalline template layer; forming pores in the first epitaxial crystalline layer by electrochemical etching of the first epitaxial crystalline layer to enable strain relaxation in the second epitaxial crystalline layer by plastic deformation of bonds in the first epitaxial crystalline layer and/or at the interface between the first epitaxial crystalline layer and the second epitaxial crystalline layer; and forming one or more channels comprising a conductive material through at least the first epitaxial crystalline layer and the second epitaxial crystalline layer thereby to enable electrical connection to the crystalline template layer through the first epitaxial crystalline layer and the second epitaxial crystalline layer.

A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.

A lighting system includes an LED array having a plurality of LED pixels and a power controller. The power controller adjusts a supply voltage for powering the LED pixels based on one or more conditions of the LED array. The power controller may determine the supply voltage based on process data of the LED array. The power controller may adjust the supply voltage based on an operating temperature of the LED pixels and the amplitude of a current driving the LED pixels.

According to the present inventive concept, a display device includes a display panel in which a plurality of display modules are horizontally aligned in an M*N matrix, wherein each of the plurality of display modules includes: a mounting surface on which a plurality of inorganic light-emitting elements are mounted; a substrate including a back surface disposed opposite to the mounting surface; and a module heat-dissipation member in contact with the back surface of the substrate to dissipate heat generated in the substrate, wherein the display panel includes a panel heat-dissipation member which connects the respective module heat-dissipation members so as to dissipate heat between the respective module heat-dissipation members of the plurality of display modules.

Disclosed are display panels and methods of fabricating the same. The display panel includes a base substrate having a pixel area and a peripheral area adjacent to the pixel area, a light emitting element on the base substrate to generate a first light and overlapping the pixel area, a light control layer on the light emitting element to convert the first light into a white light, and a color filter layer on the light control layer and includes a first color filter that allows penetration of the first light, a second color filter that allows penetration of a second light different from the first light, and a third color filter that allows penetration of a third light different from the first light and the second light.

Provided are nanorod light emitting diodes (LEDs), display apparatuses, and manufacturing methods thereof. The nanorod LED includes a first-type semiconductor layer including a body and a pyramidal structure continuously provided from the body, a nitride light emitting layer provided on the pyramidal structure, and a second-type semiconductor layer provided in the nitride light emitting layer.

A display device and a manufacturing method of the display device are provided. A display device includes a conductive line disposed on a substrate, a first capacitor electrode disposed on the conductive line and electrically connected to the conductive line, a passivation layer disposed on the first capacitor electrode, a first electrode disposed on the passivation layer and at least partially overlapping the first capacitor electrode in a plan view, a second electrode spaced apart from the first electrode, the second electrode and the first electrode being disposed on a same layer, and light emitting elements disposed between the first electrode and the second electrode.