An organic electroluminescence device includes a first electrode, a hole transport region disposed on the first electrode, an emission layer disposed on the hole transport region, an electron transport region disposed on the emission layer, and a second electrode disposed on the electron transport region. The hole transport region includes an amine compound represented by Formula 1, thereby exhibiting high light emission efficiency.

A display device includes: a flexible substrate having a first surface and a second surface opposite to the first surface, where the flexible substrate includes an upper surface portion extending along a first direction, a first bent portion connected to the upper surface portion, a first side portion connected to the first bent portion, a second bent portion connected to the first side portion, a second side portion connected to the second bent portion, a third bent portion connected to the second side portion, and a lower surface portion connected to the third bent portion; and a support member disposed on the second surface of the flexible substrate, where a portion of the support member disposed to overlap the second bent portion has a thickness less than a thickness of a portion disposed on the first side portion and a thickness of a portion disposed on the second side portion.

An organic electric element according to an embodiment of the present disclosure includes a first electrode, a second electrode, and an organic material layer formed between the first electrode and the second electrode. The organic material layer includes a plurality of emission-auxiliary layers, and the HOMO energy levels of the plurality of emission-auxiliary layers are limited to specific conditions in relation to the neighboring organic material layers, thereby the driving voltage, the luminous efficiency and the life time of the organic electric element can be improved.

An organic electroluminescence device includes an anode, a cathode, an emitting layer between the anode and the cathode, a first electron transporting layer between the cathode and the emitting layer, and a second electron transporting layer between the cathode and the first electron transporting layer. The first electron transporting layer is directly adjacent to the emitting layer, the second electron transporting layer is directly adjacent to the first electron transporting layer, the emitting layer contains a first compound represented by Formula (1) below, the first compound has at least one group represented by Formula (11) below, the first electron transporting layer contains a second compound represented by Formula (2) below, and the second electron transporting layer contains a third compound represented by Formula (3) below.

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A display device includes: a base substrate, an emission element disposed on the base substrate, a capping layer disposed on the emission element and having a thickness of about 280 Å to about 360 Å, an anti-reflection layer disposed on the capping layer, a filling layer disposed on the anti-reflection layer and having a refractive index of about 1.3 to about 1.6, and an encapsulation substrate disposed on the filling layer.

A semiconductor structure includes a substrate with a plurality of word line trenches and source/drain regions each adjacent to each word line trench; a word line located in the word line trench, which includes a first conductive layer located at a bottom of the word line trench, a single junction layer and a second conductive layer stacked in sequence, in which a projection of the word line on a sidewall of the word line trench and the projection of the source/drain region on the sidewall of the word line trench have an overlapping region with a preset height, and when a voltage applied to the word line is less than a preset voltage, a resistance of the single junction layer is greater than the preset resistance, to make the first conductive layer and the second conductive layer disconnected.

Disclosed is a display device including a base layer, a circuit layer including a plurality of transistors spaced apart from each other and disposed on a top of the base layer, a plurality of insulating layers disposed on a top of the base layer, and a plurality of contact electrodes electrically connected to the transistors, respectively, a first light emitting unit disposed on a top of the circuit layer, a second light emitting unit, and a lower protrusion disposed between at least one of the transistors and the second lower electrode, wherein at least one of the contact electrodes is disposed to extend to a top surface of the lower protrusion in the circuit layer while following a shape of the lower protrusion to simplify an etching process of an encapsulation layer.

Provided is an RF switch device and a method of manufacturing the same and, more particularly, to an RF switch device and a method of manufacturing the same seeking to improve RF characteristics by forming a trap layer on a part of the surface of a substrate, thereby trapping carriers that may accumulate on the surface of the substrate.

Embodiments described herein relate to a method of epitaxial deposition of p-channel metal oxide semiconductor (MMOS) source/drain regions within horizontal gate all around (hGAA) device structures. Combinations of precursors are described herein, which grow of the source/drain regions on predominantly <100> surfaces with reduced or negligible growth on <110> surfaces. Therefore, growth of the source/drain regions is predominantly located on the top surface of a substrate instead of the alternating layers of the hGAA structure. The precursor combinations include a silicon containing precursor, a germanium containing precursor, and a boron containing precursor. At least one of the precursors further includes chlorine.

A display panel capable of reducing a width of a bezel of an area around a hole and a display device including the panel are disclosed. The display panel having the hole defined therein includes a first pixel array including source lines and sub-pixels; a bezel defined around the hole and at least one of the source lines of the first pixel array extends in and along the bezel; and a second pixel array including sub-pixels and the at least one source line extending along the bezel and to the second pixel array.