Disclosed is a 2D-3D HJ-TFET made of a material, the band gap of which changes according to the thickness, such as black phosphorous or TMDC, in order to extend Moore's law. More particularly, disclosed are the structure of a 2D-3D HJ-TFET and a method for manufacturing the same, wherein the 2D-3D HJ-TFET is made of a material such as black phosphorous or TMDC such that the same consumes less power, has a high switching speed, can operate in a complementary manner so as to replace a conventional CMOS transistor, and can extend Moore's law.

Disclosed is a 2D-3D HJ-TFET made of a material, the band gap of which changes according to the thickness, such as black phosphorous or TMDC, in order to extend Moore's law. More particularly, disclosed are the structure of a 2D-3D HJ-TFET and a method for manufacturing the same, wherein the 2D-3D HJ-TFET is made of a material such as black phosphorous or TMDC such that the same consumes less power, has a high switching speed, can operate in a complementary manner so as to replace a conventional CMOS transistor, and can extend Moore's law.

A surface mounted type leadframe includes a conductive base and an insulating material layer. The conductive base includes at least three connecting pads spaced apart from each other. First surface of the connecting pads are configured to form die bonding regions, and second surfaces of the connecting pads opposite to the first surfaces are configured to form soldering regions. The insulating material layer at least partially covers the first surfaces, surrounds the die bonding regions, and is filled in a gap between each two adjacent connecting pads. A photoelectric device with multi-chips adopting the surface mounted type leadframe is also provided.

A spliced unit including a substrate, a circuit unit, and light-emitting units is provided. The substrate includes a first part having a first bottom surface and a first top surface opposite to the first bottom surface, and a second part having a second bottom surface and a second top surface opposite to the second bottom surface. There is a height difference between the first bottom surface of the first part and the second bottom surface of the second part. The circuit unit is disposed on the first top surface. The light-emitting units are disposed in the second part of the substrate. In a direction of a normal line perpendicular to the substrate, the first part of the substrate and the second part of the substrate are not overlapped, and the circuit unit and the light-emitting units are not overlapped. A spliced panel including the spliced units is also provided.

A light-emitting assembly that includes multiple light-emitting devices electrically coupled to a substrate via nano-porous metal blocks. The light-emitting assembly may be used as a source array of a near-eye display device. The light-emitting devices may be superluminescent diodes and the nano-porous metal blocks may include nano-porous gold. The nano-porous metal blocks allow thermal and electrical conduction between the light-emitting devices and the substrate. Nano-porous gold allows bonding at a lower temperature than solder and is compressible. Different pressure can be applied to different nano-porous metal blocks to align the optical heights of different light-emitting devices relative to the substrate. After forming nano-porous metal blocks on a substrate, the light-emitting devices are pressed onto the metal blocks to secure and align the light-emitting devices. The alignment process may be carried in an active optical alignment process when the light-emitting devices are powered and emit light.

This invention provides an effective and rapid method of laser processing for separating semiconductor devices formed on hard and solid substrates (6) with a one pass process. The method is based on generating fractures along the scribing trajectory which extend deep into the bulk of a workpiece (6), wherein thermal stress is induced by delivering at least two processing (ultra short pulse) pulsed-beams (7), containing at least primary and secondary pulses. Primary pulses are used to generate a heat accumulated zone, which allows for more efficient absorption of the secondary pulses, which generate a sufficient heat gradient to produce mechanical failures, necessary for mechanically separating the workpiece (6) into separate pieces.

A display device and a method of manufacturing a display device are provided. A display device includes: a substrate; a switching element on the substrate; a first insulating layer on the switching element; a first alignment electrode and a second alignment electrode disposed on the first insulating layer so as to face each other; a second insulating layer on the first alignment electrode and the second alignment electrode; a first driving electrode on the second insulating layer and connected to the switching element; a second driving electrode disposed on the second insulating layer so as to face the first driving electrode; and a light emitting element between the first driving electrode and the second driving electrode, and a distance between the first alignment electrode and the second alignment electrode is less than a distance between the first driving electrode and the second driving electrode.

A micro LED display panel includes a back plate, a plurality of micro LEDs on the back plate, a first partition wall on a side of the back plate having the plurality of micro LEDs, an insulating layer on the back plate, and a common electrode on the insulating layer and covering the plurality of micro LEDs. The first partition wall divides the back plate into a plurality of light-emitting regions independent from each other. Each of the light-emitting regions is provided with one of the micro LEDs. The insulating layer is located in each of the light-emitting regions and surrounds each of the micro LEDs.

Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for a transistor structure that includes stacked nanoribbons as a single crystal or monolayer, such as a transition metal dichalcogenide (TMD) layer, grown on a silicon wafer using a seeding material. Other embodiments may be described and/or claimed.

Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for a transistor structure that includes stacked nanoribbons as a single crystal or monolayer, such as a transition metal dichalcogenide (TMD) layer, grown on a silicon wafer using a seeding material. Other embodiments may be described and/or claimed.