Gallium nitride (GaN) epitaxy on patterned substrates for integrated circuit technology is described. In an example, an integrated circuit structure includes a material layer including gallium and nitrogen, the material layer having a first side and a second side opposite the first side. A plurality of fins is on the first side of the material layer, the plurality of fins including silicon. A device layer is on the second side of the material layer, the device layer including one or more GaN-based devices.

Gallium nitride (GaN) epitaxy on patterned substrates for integrated circuit technology is described. In an example, an integrated circuit structure includes a material layer including gallium and nitrogen, the material layer having a first side and a second side opposite the first side. A plurality of fins is on the first side of the material layer, the plurality of fins including silicon. A device layer is on the second side of the material layer, the device layer including one or more GaN-based devices.

An artificial two-dimensional (2D) material includes a layered atomic structure including a middle atomic layer, a lower atomic layer, and an upper atomic layer. The lower and upper atomic layers are disposed on lower and upper surfaces of the middle atomic layer respectively. The middle atomic layer is a 2D planar atomic structure formed of a transition metal. The lower and upper atomic layers are a 2D planar atomic structure formed of heterogeneous atoms. Atoms of the layered atomic structure are bound by chemical bonding.

An artificial two-dimensional (2D) material includes a layered atomic structure including a middle atomic layer, a lower atomic layer, and an upper atomic layer. The lower and upper atomic layers are disposed on lower and upper surfaces of the middle atomic layer respectively. The middle atomic layer is a 2D planar atomic structure formed of a transition metal. The lower and upper atomic layers are a 2D planar atomic structure formed of heterogeneous atoms. Atoms of the layered atomic structure are bound by chemical bonding.

In a semiconductor device in which a channel formation region is included in an oxide semiconductor layer, an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer are used to supply oxygen of the gate insulating film, which is introduced by an ion implantation method, to the oxide semiconductor layer.

In a semiconductor device in which a channel formation region is included in an oxide semiconductor layer, an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer are used to supply oxygen of the gate insulating film, which is introduced by an ion implantation method, to the oxide semiconductor layer.

An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

Disclosed herein is a composite transistor which includes a first transistor TR.sub.1 including a control electrode, a first active region, a first A extending part, and a first B extending part, and a second transistor TR.sub.2 including a control electrode, a second active region, a second A extending part, and a second B extending part. The first active region, the second active region, and the control electrode overlap one another. Both the first A extending part and the first B extending part extend from the first active region and both the second A extending part and the second B extending part extend from the second active region. The first electrode is connected to the first A extending part, the second electrode is connected to the second A extending part, and the third electrode is connected to the first B extending part and the second B extending part.

A pair of optical components is used in an isolator that enables electric isolation. Each of the optical components includes: first lens portions arranged on different optical paths and transmitting light in a first direction; second lens portions arranged on different optical paths and transmitting light in the second direction orthogonal to the first direction; and a reflection portion reflecting, in the second direction, the light in the first direction transmitted through the first lens portion and guiding the light to the second lens portion, or reflecting, in the first direction, the light in the second direction transmitted through the second lens portion and guiding the light to the first lens portion The second lens portion included in one of the pair of optical components and the second lens portion included in the other optical component are spaced apart from each other and face each other.