A novel doping technology for semiconductor wafers has been developed, referred to as a quantum doping process that permits the deposition of only a fixed, controlled number of atoms in the form of a monolayer in a substitutional condition where only unterminated surface bonds react with the dopant, thus depositing only a number of atoms equal to the atomic surface density of the substrate material. This technique results in providing a quantized set of possible dopant concentration values that depend only on the additional number of layers of substrate material formed over the single layer of dopant atoms.