An InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure and a preparation method and an application thereof are provided. The detector includes: a Si substrate, an AlN/AlGaN/GaN buffer layer, a u-GaN/AlN/u-GaN/SiN.sub.x/u-GaN buffer layer, an n-GaN buffer layer, an InGaN/GaN superlattice layer and an InGaN/GaN multiple quantum well layer in sequence from bottom to top. The multiple quantum well layer has a groove structure, a mesa and a groove of the multiple quantum well layer are provided with a Si.sub.3N.sub.4 passivation layer. The passivation layer in the groove is provided with a first metal layer electrode with a semicircular cross section, and the passivation layer on the mesa is provided with second metal layer electrode.

The present invention provides a photodiode, which includes: a light absorption substrate, a first electrode portion, a second electrode portion, an antireflection layer, and a distributed Bragg reflection layer. The antireflection layer is arranged to receive light to get into the light absorption substrate. The antireflection layer is arranged to receive light to get into the light absorption substrate, and the distributed Bragg reflection layer is arranged to reflect light transmitting through the light absorption substrate to exit from the light absorption substrate back to the light absorption substrate, in order to enhance the photocurrent and the spectrum sensitivity of the photodiode.

The present disclosure relates to an optical detection panel. The optical detection panel may include a first substrate and a second substrate opposite the first substrate, a photosensitive component and a driving thin film transistor at a side of the second substrate facing the first substrate, a first electrode and a second electrode at a side of the second substrate facing the first substrate, and a plurality of microlenses at a side of the photosensitive component opposite from the second substrate. The second electrode may be connected to the driving thin film transistor.

A stacked III-V semiconductor photonic device having a second metallic terminal contact layer at least formed in regions, a highly doped first semiconductor contact region of a first conductivity type, a very low doped absorption region of the first or second conductivity type having a layer thickness of 20 μm-2000 μm, a first metallic terminal contact layer, wherein the first semiconductor contact region extends into the absorption region in a trough shape, the second metallic terminal contact layer is integrally bonded to the first semiconductor contact region and the first metallic terminal contact layer is arranged below the absorption region. In addition, the stacked III-V semiconductor photonic device has a doped III-V semiconductor passivation layer of the first or second conductivity type, wherein the III-V semiconductor passivation layer is arranged at a first distance of at least 10 μm to the first semiconductor contact region.

Image sensors are provided. The image sensor may include a substrate including a first surface and a second surface opposite the first surface, a photoelectric conversion layer in the substrate, and a lower capacitor connection pattern on the first surface of the substrate. The second surface of the substrate may be configured to receive incident light. The lower capacitor connection pattern may include a capacitor region and a landing region protruding from the capacitor region. The image sensors may also include a capacitor structure including a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the capacitor region, a first wire on the capacitor structure and connected to the second conductive pattern, and a second wire connected to the landing region. The first conductive pattern may be connected to the lower capacitor connection pattern. A surface of the first wire facing the substrate and a surface of the second wire facing the substrate may be coplanar.

A light detecting device includes a light absorbing layer configured to absorb light in a wavelength range from visible light to short-wave infrared (SWIR); a first semiconductor layer provided on a first surface of the light absorbing layer; an anti-reflective layer provided on the first semiconductor layer and comprising a material having etch selectivity with respect to the first semiconductor layer; and a second semiconductor layer provided on a second surface of the light absorbing layer. The first semiconductor layer has a thickness less than 500 nm so as to be configured to allow light to transmit therethrough in the wavelength range from visible light to SWIR.

According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AIN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

A silicon photodiode according to an embodiment of the present invention comprises: a silicon substrate having a first conductive area and a second conductive area horizontally spaced apart from the first conductive area; a plurality of randomly arranged metal nanoparticles formed on the silicon substrate; an antireflective layer covering the metal nanoparticles; a first contact passing through the antireflective layer and connected to the first conductive layer; and a second contact passing through the antireflective layer and connected to the second conductive layer.

Disclosed herein is a system for detecting cancer cells. The system includes a biosensor comprising a graphene-Si Schottky junction, a light source placed above the biosensor, an electrical stimulator-analyzer connected to the biosensor, and a processing unit connected to the electrical stimulator-analyzer and the light source. The processing unit is configured to perform a method. The method includes generating a set of photocurrents in a reverse bias regime passed through the graphene-Si Schottky junction with a sample placed thereon utilizing the light source and the electrical stimulator-analyzer, measuring the set of the generated photocurrents through the graphene-semiconductor Schottky junction in reverse bias regime in the presence of the sample utilizing the electrical stimulator-analyzer device, and detecting a presence of cancer cells in the sample responsive to detecting a change in the measured set of the generated photocurrents within the reverse bias regime.