A photoelectric conversion element provided in a semiconductor layer having first and second surfaces includes a first region of a first conductivity type, a second region of a second conductivity type closer to the second surface than the first region and forming a p-n junction with the first region, a third region of the first conductivity type closer to the second surface than the second region, a fourth region of the second conductivity type closer to the second surface than the third region, a fifth region of the second conductivity type between the third fourth regions, and a sixth region of the second conductivity type surrounding a region where the first, second, third, and fifth regions are disposed in a plan view. The fifth region has an area smaller than that of the third region in the plan view, and overlaps with the first region in the plan view.

An InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure and a preparation method and an application thereof are provided. The detector includes: a Si substrate, an AlN/AlGaN/GaN buffer layer, a u-GaN/AlN/u-GaN/SiN.sub.x/u-GaN buffer layer, an n-GaN buffer layer, an InGaN/GaN superlattice layer and an InGaN/GaN multiple quantum well layer in sequence from bottom to top. The multiple quantum well layer has a groove structure, a mesa and a groove of the multiple quantum well layer are provided with a Si.sub.3N.sub.4 passivation layer. The passivation layer in the groove is provided with a first metal layer electrode with a semicircular cross section, and the passivation layer on the mesa is provided with second metal layer electrode.

The present invention provides a photodiode and a display screen. The photodiode includes a first electrode and a second electrode in order. When a direction of an incident light of the photodiode is a first direction, a material of the first electrode is a transparent conductive material, and a material of the second electrode is a metal material. When the direction of the incident light of the photodiode is a second direction, the second electrode is made of a transparent conductive material, and the first electrode is made of a metal material.

Disclosed herein is a radiation detector comprising: a substrate of an intrinsic semiconductor; a semiconductor single crystal in a recess in the substrate, the semiconductor single crystal having a different composition from the intrinsic semiconductor; a first electrical contact in electrical contact with the semiconductor single crystal; a second electrical contact on or in the substrate, and surrounding the first electrical contact or the semiconductor single crystal, wherein the second electrical contact is electrically isolated from the semiconductor single crystal; wherein the radiation detector is configured to absorb radiation particles incident on the semiconductor single crystal and to generate charge carriers.

The present invention provides a photodiode, which includes: a light absorption substrate, a first electrode portion, a second electrode portion, an antireflection layer, and a distributed Bragg reflection layer. The antireflection layer is arranged to receive light to get into the light absorption substrate. The antireflection layer is arranged to receive light to get into the light absorption substrate, and the distributed Bragg reflection layer is arranged to reflect light transmitting through the light absorption substrate to exit from the light absorption substrate back to the light absorption substrate, in order to enhance the photocurrent and the spectrum sensitivity of the photodiode.

A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.

Inhibition of movement of charges in a semiconductor element (100) formed by growing a group III-V compound semiconductor layer on a silicon substrate (110) is prevented. The semiconductor element (100) includes a silicon substrate (110), a first compound semiconductor layer (140), a second compound semiconductor layer (150), and an electrode (121). The first compound semiconductor layer (140) is formed on the silicon substrate (110). The second compound semiconductor layer (150) is stacked on the first compound semiconductor layer (140). The electrode (121) is disposed on the silicon substrate (110) and controls movement of charges between the silicon substrate (110) and the second compound semiconductor layer (150) via the first compound semiconductor layer (140).

According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AIN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

An optical device includes an intermetallic compound of a first metal and a second metal having a lower work function than the first metal, or a solid-solution alloy of the first metal and the second metal and includes an n-type semiconductor in Schottky junction with the intermetallic compound or the solid-solution alloy.