An electronic device includes a substrate; a first electrode layer disposed on the substrate; a first insulating layer disposed on the first electrode layer, having a first opening to expose a surface of the first electrode layer; a connecting layer, wherein at least a portion of the connecting layer is disposed in the first opening, a sidewall exposure of the first opening is exposed, and the connecting layer is electrically connected to the first electrode layer; a second insulating layer disposed on the first insulating layer, having a second opening to expose a surface of the connecting layer; and a second electrode layer disposed on the second insulating layer, wherein at least a portion of the second electrode layer is disposed in the second opening, and is electrically connected to the connecting layer.

An electromagnetic wave detector includes a semiconductor layer, a two-dimensional material layer electrically connected to the semiconductor layer, a first electrode electrically connected to the two-dimensional material layer without the semiconductor layer interposed therebetween, a second electrode electrically connected to the two-dimensional material layer with the semiconductor layer interposed therebetween, and a ferroelectric layer in contact with at least a part of the two-dimensional material layer.

An imaging device including a semiconductor substrate; a first pixel including a first photoelectric converter configured to convert incident light into charge, and a first diffusion region in the semiconductor substrate, configured to electrically connected to the first photoelectric converter and a second pixel including a second photoelectric converter, configured to convert incident light into charge, and a second diffusion region in the semiconductor substrate, configured to electrically connected to the second photoelectric converter, wherein an area of the first photoelectric converter is greater than an area of the second photoelectric converter in a plan view, both the first diffusion region and the second diffusion region overlap with the first photoelectric converter in the plan view, and neither the first diffusion region nor the second diffusion region overlaps with the second photoelectric converter in the plan view.

Disclosed herein is a system for detecting cancer cells. The system includes a biosensor comprising a graphene-Si Schottky junction, a light source placed above the biosensor, an electrical stimulator-analyzer connected to the biosensor, and a processing unit connected to the electrical stimulator-analyzer and the light source. The processing unit is configured to perform a method. The method includes generating a set of photocurrents in a reverse bias regime passed through the graphene-Si Schottky junction with a sample placed thereon utilizing the light source and the electrical stimulator-analyzer, measuring the set of the generated photocurrents through the graphene-semiconductor Schottky junction in reverse bias regime in the presence of the sample utilizing the electrical stimulator-analyzer device, and detecting a presence of cancer cells in the sample responsive to detecting a change in the measured set of the generated photocurrents within the reverse bias regime.

Disclosed is a metal-semiconductor contact structure based on two-dimensional (2D) semimetal electrodes, including a semiconductor module and a metal electrode module, where the semiconductor module is a 2D semiconductor material, and the metal electrode module is a 2D semimetal material with no dangling bonds on its surface; the 2D semiconductor material and the 2D semimetal material are interfaced with a Van der Waals interface with a surface roughness of 0.01-1 nanometer (nm) and no dangling bonds on the surface, the 2D semiconductor material and the 2D semimetal material are spaced less than 1 nm apart.

Structures for an avalanche photodetector and methods of forming a structure for an avalanche photodetector. The structure includes a first semiconductor layer having a first portion and a second portion, and a second semiconductor layer stacked in a vertical direction with the first semiconductor layer. The first portion of the first semiconductor layer defines a multiplication region of the avalanche photodetector, and the second semiconductor layer defines an absorption region of the avalanche photodetector. The structure further includes a charge sheet in the second portion of the first semiconductor layer. The charge sheet has a thickness that varies with position in a horizontal plane, and the charge sheet is positioned in the vertical direction between the second semiconductor layer and the first portion of the first semiconductor layer.

A photoelectric detection substrate and a manufacturing method thereof, and a photoelectric detection device are provided. The photoelectric detection substrate includes: a base substrate and a semiconductor layer arranged on the base substrate, wherein the semiconductor layer is configured to convert an optical signal into an electrical signal.

To provide a ranging device having improved quantum efficiency and resolution. The present disclosure provides a ranging device including: a semiconductor layer having a first surface and a second surface opposite to the first surface; a lens on the second surface side; first and second charge storage sections in the semiconductor layer on the first surface side; a photoelectric conversion section that is in contact with the semiconductor layer on the first surface side, the photoelectric conversion section including a material different from a material of the semiconductor layer; first and second voltage application sections that apply a voltage to the semiconductor layer between the first and second charge storage sections and the photoelectric conversion section; and a waveguide provided in the semiconductor layer so as to extend from the second surface to the photoelectric conversion section, the waveguide including a material different from the material of the semiconductor layer.

An optoelectronic semiconductor device is disclosed wherein the device is a vertical-cavity surface-emitting laser or a photodiode containing a section, the top part of which is electrically isolated from the rest of the device. The electric isolation can be realized by etching a set of holes and selective oxidation of AlGaAs layer or layers such that the oxide forms a continuous layer or layers everywhere beneath the top surface of this section. Alternatively, a device can be grown epitaxially on a semi-insulating substrate, and a round trench around a section of the device can be etched down to the semi-insulating substrate thus isolating this section electrically from the rest of the device. Then if top contact pads are deposited on top of the electrically isolated section, the pads have a low capacitance, and a pad capacitance below two hundred femto-Farads, and the total capacitance of the device below three hundred femto-Farads can be reached.

The silicon-based photomultiplier device comprises a substrate (1), a first layer (2) of a first conductivity type, a second layer (3) of a second conductivity type formed on the first layer, wherein the first layer (2) and the second layer (3) form a p-n junction, wherein the first layer (2) and the second layer (3) are disposed on or above the substrate (1). A material layer (15) between the substrate (1) and the first layer (2) fulfills the function of a light absorber, thereby efficiently suppressing crosstalk between adjacent cells of the device. Material layer (15) may further serve as an electrode for readout of electrical signals from the device.