An apparatus and method for producing a perpetual energy harvester which harvests ambient near ultraviolet to infrared radiation and provides continual power regardless of the environment. The device seeks to harvest the largely overlooked blackbody radiation through use of a semiconductor thermal harvester, providing a continuous source of power. Additionally, increased power output is provided through a solar harvester. The solar and thermal harvesters are physically connected but electrically isolated.

The present disclosure relates to a solid-state imaging device capable of further decreasing reflectivity, a method of manufacturing the same, and an electronic device. The solid-state imaging device includes a semiconductor substrate on which a photoelectric converting unit is formed for each of a plurality of pixels, and an antireflection structure provided on a light incident surface side from which light is incident on the semiconductor substrate in which a plurality of types of projections of different heights is formed. The antireflection structure is formed by performing processing of digging a light incident surface of the semiconductor substrate in a plurality of stages with different processing conditions. The antireflection structure is the structure in which a second projection lower than a first projection is formed between the first projections of predetermined height. The present technology may be applied to a CMOS image sensor, for example.

Methods of passivating light-receiving surfaces of solar cells with high energy gap (Eg) materials, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the substrate. A Group III-nitride material layer is disposed above the passivating dielectric layer. In another example, a solar cell includes a substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the substrate. A large direct band gap material layer is disposed above the passivating dielectric layer, the large direct band gap material layer having an energy gap (Eg) of at least approximately 3.3. An anti-reflective coating (ARC) layer disposed on the large direct band gap material layer, the ARC layer comprising a material different from the large direct band gap material layer.

The present disclosure relates to an image sensor. The image sensor includes a substrate and a photodetector in the substrate. The image sensor further includes an absorption enhancement structure. The absorption enhancement structure is defined by a substrate depression along a first side of the substrate. The substrate depression is defined by a first plurality of sidewalls that slope toward a first common point and by a second plurality of sidewalls that slope toward a second common point. The first plurality of sidewalls extend over the second plurality of sidewalls.

A method for manufacturing a photovoltaic device capable of suppressing decreases in an open-circuit voltage and a fill factor or suppressing the occurrence of a current leak. The method for manufacturing a photovoltaic device includes: (a) forming a pyramidal texture on a first main surface of a silicon substrate; (b) forming a first silicate glass on the first main surface; (c) forming a second silicate glass on the first silicate glass; (d) diffusing the impurities of the first conductivity type contained in the first silicate glass to the first main surface of the silicon substrate; (e) forming a third silicate glass on the second silicate glass; and (f) diffusing impurities of a second conductivity type to a second main surface of the silicon substrate after (e).

In one embodiment, a photo detector is provided with a semiconductor layer having a light receiving surface, a first reflective material which is provided on a side opposite to the light receiving surface side of the semiconductor layer and reflects a light incident from the light receiving surface, and a slope portion provided on a side surface of the semiconductor layer.

A semiconductor device and a manufacturing method thereof are provided. The manufacturing method of a semiconductor device, comprising following steps: providing a substrate and sequentially forming a first mask layer and a second mask layer on the substrate, wherein the second mask layer covers the first mask layer; dry etching the first mask layer using the second mask layer as a mask, wherein the first mask layer has a patterned first opening; and removing the second mask layer and wet etching the substrate using the patterned first mask layer as a mask to form a plurality of trenches on the substrate, wherein the plurality of trenches extend from a surface of the substrate to inside of the substrate, and a cross-sectional width in a cross-section perpendicular to the substrate of the plurality of trenches gradually decreases from the surface of the substrate to the inside of the substrate.

Local patterning and metallization of semiconductor structures using a laser beam, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a method of fabricating a solar cell includes providing a substrate having an intervening layer thereon. The method also includes locating a metal foil over the intervening layer. The method also includes exposing the metal foil to a laser beam, wherein exposing the metal foil to the laser beam forms openings in the intervening layer and forms a plurality of conductive contact structures electrically connected to portions of the substrate exposed by the openings.

The present invention relates to an alkaline etching agent for treating a surface of a semiconductor substrate for solar cells, containing at least one hydroxystyrene polymer represented by the general formula (1) and an alkaline agent. According to the present invention, some effects are exhibited that the texture formation is made possible to a semiconductor substrate for solar cells at relatively lower temperatures with a shorter amount of time, thereby having excellent productivity.

The invention discloses a substrate with high fracture strength. The substrate according to the invention includes a plurality of nanostructures. The substrate has a first surface, and the nanostructures are protruded from the first surface. By the formation of the nanostructures, the fracture strength of the substrate is enhanced.