A quantum-particle cell manufacturing process includes coating a substrate with transparent conductive oxide (TCO) such as indium tin oxide (ITO). Regions of the TCO are then transformed, e.g., by pulsed-laser annealing, to increase their resistivity. The annealed region then electrically isolates adjacent higher conductivity and lower resistivity regions, which can serve as field plates. At least one annealed region extends from the cell interior through a bond between the substrate and sidewalls and into the cell exterior so that adjacent unannealed regions can serve as independently controllable feedthroughs. The annealing does not significantly affect the TCO thickness so the bond between the substrate and the sidewall structure remains intact and the completed quantum particle cell can be hermetically sealed.

A photoconductive device that includes a semiconductor substrate, an antenna assembly, and a photoconductive assembly with one or more plasmonic contact electrodes. The photoconductive assembly can be provided with plasmonic contact electrodes that are arranged on the semiconductor substrate in a manner that improves the quantum efficiency of the photoconductive device by plasmonically enhancing the pump absorption into the photo-absorbing regions of semiconductor substrate. In one exemplary embodiment, the photoconductive device is arranged as a photoconductive source and is pumped at telecom pump wavelengths (e.g., 1.0-1.6 μm) and produces milliwatt-range power levels in the terahertz (THz) frequency range.

Methods of making a semiconductor layer from nanocrystals are disclosed. A film of nanocrystals capped with a ligand can be deposited onto a substrate; and the nanocrystals can be irradiated with one or more pulses of light. The pulsed light can be used to substantially remove the ligands from the nanocrystals and leave the nanocrystals unsintered or sintered, thereby providing a semiconductor layer. Layered structures comprising these semiconductor layers with an electrode are also disclosed. Devices comprising such layered structures are also disclosed.

In the field of photoelectric devices, a visible light detector is provided with high-photoresponse based on a TiO.sub.2/MoS.sub.2 heterojunction and a preparation method thereof. The detector, based on a back-gated field-effect transistor based on MoS.sub.2, includes a MoS.sub.2 channel, a TiO.sub.2 modification layer, a SiO.sub.2 dielectric layer, Au source/drain electrodes and a Si gate electrode, The TiO.sub.2 modification layer is modified on the surface of the MoS.sub.2 channel. By employing micromechanical exfoliation and site-specific transfer of electrodes, the method is intended to prepare a detector by constructing a back-gated few-layer field-effect transistor based on MoS.sub.2, depositing Ti on the channel surface, and natural oxidation.

A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

An interband cascade (IC) optoelectronic device constructed to have a plurality of IC stages, wherein each of the IC stages comprises: a hole injector; an electron injector; an active region coupled to the hole injector and the electron injector and comprising a first layer, wherein the first layer comprises a first material, and wherein the first material comprises InAsP or AlInAsP; a conduction band running through the hole injector, the electron injector, and the active region; and a valence band running through the hole injector, the electron injector, and the active region. In certain embodiments, the IC optoelectronic device may be a laser (ICL), a light-emitting diode (LED), a superluminescent light-emitting diode (SLED), a photodector, or a photovoltaic device.

An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

The present invention relates to an electro-optical device (1) having two interaction regions (2), which each comprise a longitudinal waveguide section (3) and one or two active elements (5), which active element or the respective active element comprises or consists of at least one electro-optical active material, more particularly graphene, wherein the longitudinal waveguide sections (3) of the two interaction regions (2) are arranged spaced apart from one another, and the active element or the respective active element (5) extends at least in some sections above and/or below and/or within the waveguide longitudinal section (3) of the respective interaction region (2), and wherein two or more contact elements (6) are provided which are each in contact with at least one of the active elements (5).

A photodetector includes a metal layer that shields incident light and generates surface plasmon polaritons (SPPs), a light absorbing layer that absorbs the generated SPPs and allows charges excited by the absorbed SPPs and a localized electric field effect to tunnel, a dielectric formed at nanoholes in which at least a part of the metal layer is opened, and a semiconductor layer that induces the photocurrent based on an electric field effect of tunneled electrons. The SPPs form localized surface plasmons (LSPs) at an interface where the metal layer meets the dielectric.

Electromagnetic wave detector includes semiconductor layer, first insulating film, two-dimensional material layer, first electrode, second electrode, second insulating film, and control electrode. First insulating film is arranged on semiconductor layer. First insulating film is provided with opening. Two-dimensional material layer is electrically connected to semiconductor layer in opening. Two-dimensional material layer extends from above opening to first insulating film. Second insulating film is in contact with two-dimensional material layer. Control electrode is connected to two-dimensional material layer with second insulating film interposed therebetween.