Embodiments of the present disclosure describe a photodetector and/or photovoltaic device comprising a semiconducting substrate and a solution including at least GQD and PEDOT:PSS, the solution deposited as a layer on the semiconducting substrate. Embodiments of the present disclosure further describe a method of fabricating a photodetector and/or photovoltaic device comprising contacting an amount of GQD with PEDOT:PSS sufficient to form a solution; and depositing the solution as a layer on a semiconducting substrate.

Embodiments of the present disclosure describe a photodetector and/or photovoltaic device comprising a semiconducting substrate and a solution including at least GQD and PEDOT:PSS, the solution deposited as a layer on the semiconducting substrate. Embodiments of the present disclosure further describe a method of fabricating a photodetector and/or photovoltaic device comprising contacting an amount of GQD with PEDOT:PSS sufficient to form a solution; and depositing the solution as a layer on a semiconducting substrate.

A process for producing silicon nano-particles from a raw silicon material, the process including steps of alloying the raw silicon material with at least one alloying metal to form an alloy; thereafter, processing the alloy to form alloy nano-particles; and thereafter, distilling the alloying metal from the alloy nano-particles whereby silicon nano-particles are produced.

A process for producing silicon nano-particles from a raw silicon material, the process including steps of alloying the raw silicon material with at least one alloying metal to form an alloy; thereafter, processing the alloy to form alloy nano-particles; and thereafter, distilling the alloying metal from the alloy nano-particles whereby silicon nano-particles are produced.

Novel heterojunctions, diodes, electrodes, and solar cells are comprised of semiconductive dichalcogenide flakes and metals or semi-metals like graphene. The dichalcogenide flakes and graphene flakes are deposed approximately normal to the device, enabling ohmic contact and mass production at low cost using printing equipment.

Novel heterojunctions, diodes, electrodes, and solar cells are comprised of semiconductive dichalcogenide flakes and metals or semi-metals like graphene. The dichalcogenide flakes and graphene flakes are deposed approximately normal to the device, enabling ohmic contact and mass production at low cost using printing equipment.

A process for the post-deposition treatment of colloidal quantum dot films to improve photodetector performance. A colloidal quantum dot film is first deposited on a suitable substrate or device structure, given a ligand exchange, and then allowed to dry into a completed film. Next, a solution is prepared consisting of dilute H.sub.2O.sub.2 mixed with a polar solvent such as isopropyl alcohol solution. The prepared film and substrate are then immersed into the prepared solution over a set interval of time. After which, the film is removed and rinsed with solvent, then dried with clean N.sub.2 gas. After this treatment, the colloidal quantum dot film is ready for use as a photodetector.

An opto-electronic device includes a base portion, a first electrode and a second electrode formed on an upper surface of the base portion apart from each other, a quantum dot layer, and a bank structure. The quantum dot layer is between the first electrode and the second electrode on the base portion and includes a plurality of quantum dots. The bank structure covers at least partial regions of the first electrode and the second electrode, defines a region where the quantum dot layer is formed, and is formed of an inorganic material.

An electromagnetic wave detector 100 comprises: a substrate 5 having a front surface and a back surface; an insulating layer 4 formed of a rare earth oxide, which is provided on the front surface of the substrate 5; a pair of electrodes 2 provided on the insulating layer 4 so as to be arranged to face each other across a gap; and a two-dimensional material layer 1 provided on the insulating layer 4 so as to be electrically connected to the pair of electrodes 2. The rare earth oxide contains a base material made of an oxide of a first rare earth element, and a second rare earth element different from the first rare earth element, which is activated in the base material.

An electromagnetic wave detector 100 comprises: a substrate 5 having a front surface and a back surface; an insulating layer 4 formed of a rare earth oxide, which is provided on the front surface of the substrate 5; a pair of electrodes 2 provided on the insulating layer 4 so as to be arranged to face each other across a gap; and a two-dimensional material layer 1 provided on the insulating layer 4 so as to be electrically connected to the pair of electrodes 2. The rare earth oxide contains a base material made of an oxide of a first rare earth element, and a second rare earth element different from the first rare earth element, which is activated in the base material.