An electronic device comprises a housing, a display stack, a bezel, a solar cell, and a first antenna. The housing includes a bottom wall and a side wall coupled to the bottom wall, the side wall and the bottom wall define a portion of an internal cavity. The display stack includes a display cover and a solar cell configured to output an electric power having a power level corresponding to an intensity of light received by the solar cell. The bezel is coupled to an upper edge of the side wall of the housing, the bezel enclosing the display cover. The solar cell includes a substrate and a photovoltaic layer, the photovoltaic layer including a mesh of electrically conductive material positioned on the substrate and a first opening. The first antenna is formed by the first opening of the photovoltaic layer.

The invention features a hot melt composition in the form of a film including from 40% by weight to 80% by weight of a non-functionalized alkyl acrylate, from 14% by weight to 50% by weight of an olefin polymer, from 2% by weight to 15% by weight of a first functionalized polymer comprising a functional group selected from the group consisting of epoxides and carboxylic anhydrides, and from 2% by weight to 15% by weight of a second functionalized polymer comprising a functional group capable of reacting with the functional group of the first functionalized polymer. The hot melt composition in the form of a film has found utility as an encapsulant for thin film photovoltaic modules.

A flip-chip multi junction solar cell chip integrated with a bypass diode includes from up to bottom: a glass cover; a transparent bonding layer; a front electrode; an n/p photoelectric conversion layer; a p/n tunnel junction; a structure layer of the n/p bypass diode; a first backside electrode; a second backside electrode. The solar cell chip also includes at least a through hole extending through the n/p photoelectric conversion layer, the p/n tunnel junction and the structure layer of the n/p bypass diode. An ultra-thin substrate-less cell can therefore be provided without occupying effective light receiving areas, greatly improving cell heat dissipation. With a light weight, the chip can also have advantages in space power application.

A method of making a semiconductor device includes forming a semiconductor material stack having a sodium at an atomic concentration greater than 1×10.sup.19/cm.sup.3, depositing a transparent conductive oxide layer over the semiconductor material stack, such that sodium atoms diffuse from the semiconductor material stack into the transparent conductive oxide layer, and contacting a physically exposed surface of the transparent conductive oxide layer with a fluid to remove sodium from the transparent conductive oxide layer.

A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.

A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.

A photovoltaic device includes one or more features that taken alone or in combination enhance its efficiency. Some embodiments may comprise a tandem solar device in which a top PV cell is fabricated upon a front transparent substrate, that also serves as the top encapsulating substance. The top PV cell including the front encapsulating substance is then bonded (e.g., using adhesive) to a bottom PV cell in order to complete the tandem device. Using the same transparent, insulating element as both front encapsulating substance and a substrate for fabricating the top PV cell, obviates to the need to provide a separate structure (with resulting interfaces) to perform the latter role. For tandem and non-tandem PV devices, a Through-Substrate-Via (TSV) structure may extend through an insulating substrate in order to provide contact with an opposite side (e.g., back electrode). Embodiments may find particular use in fabricating shingled perovskite photovoltaic solar cells.

Disclosed are metal chalcogenide nanoparticles forming a light absorption layer of solar cells including a first phase including copper (Cu)-tin (Sn) chalcogenide and a second phase including zinc (Zn) chalcogenide, and a method of preparing the same.

Disclosed are a precursor for preparing a light absorption layer of a solar cell including (a) an aggregate-phase composite including a first phase including a copper (Cu)-tin (Sn) bimetallic metal and a second phase including zinc (Zn)-containing chalcogenide, or including the first phase including a copper (Cu)-tin (Sn) bimetallic metal, the second phase including zinc (Zn)-containing chalcogenide and a third phase including copper (Cu)-containing chalcogenide; or (b) core-shell structured nanoparticles including a core including copper (Cu)-tin (Sn) bimetallic metal nanoparticles and a shell including zinc (Zn)-containing chalcogenide, or the zinc (Zn)-containing chalcogenide and copper (Cu)-containing chalcogenide; or (c) a mixture thereof, and a method of preparing the same.

Disclosed are a precursor for preparing a light absorption layer of a solar cell including (a) an aggregate-phase composite including a first phase including a copper (Cu)-tin (Sn) bimetallic metal and a second phase including zinc (Zn)-containing chalcogenide, or including the first phase including a copper (Cu)-tin (Sn) bimetallic metal, the second phase including zinc (Zn)-containing chalcogenide and a third phase including copper (Cu)-containing chalcogenide; or (b) core-shell structured nanoparticles including a core including copper (Cu)-tin (Sn) bimetallic metal nanoparticles and a shell including zinc (Zn)-containing chalcogenide, or the zinc (Zn)-containing chalcogenide and copper (Cu)-containing chalcogenide; or (c) a mixture thereof, and a method of preparing the same.