A layer structure for a thin-film solar cell and production method are provided. The layer structure for the thin-film solar cell includes a photovoltaic absorber layer doped, at least in a region which borders a surface of the photovoltaic absorber layer, with at least one alkali metal. The layer structure has an oxidic passivating layer on the surface of the photovoltaic absorber layer, which is designed to protect the photovoltaic absorber layer from corrosion.

Disclosed is a solar cell having a collecting electrode on one main surface of a photoelectric conversion section. The collecting electrode includes a first electroconductive layer and a second electroconductive layer in this order from the photoelectric conversion section side, and further includes an insulating layer between the first electroconductive layer and the second electroconductive layer. The first electroconductive layer includes a low-melting-point material, and a part of the second electroconductive layer is conductively connected with the first electroconductive layer through, for example, an opening in the insulating layer. The second electrode layer is preferably formed by a plating method. In addition, it is preferable that before forming the second electroconductive layer, annealing by heating is carried out to generate the opening section in the insulating layer.

Disclosed is a solar cell having a collecting electrode on one main surface of a photoelectric conversion section. The collecting electrode includes a first electroconductive layer and a second electroconductive layer in this order from the photoelectric conversion section side, and further includes an insulating layer between the first electroconductive layer and the second electroconductive layer. The first electroconductive layer includes a low-melting-point material, and a part of the second electroconductive layer is conductively connected with the first electroconductive layer through, for example, an opening in the insulating layer. The second electrode layer is preferably formed by a plating method. In addition, it is preferable that before forming the second electroconductive layer, annealing by heating is carried out to generate the opening section in the insulating layer.

A solar panel module including a cover, a back plate, at least two solar panels, and at least a dark insulating layer is provided. The solar panels are configured between the cover and the back plate and arranged along a direction. There is a separating gap of a width arranged between the two adjacent solar panels. In addition, the dark insulating layer is disposed in the separating gap.

The present disclosure provides a thin-film photovoltaic cell with a high photoelectric conversion rate and a preparation process thereof. The thin-film photovoltaic cell comprises a transparent substrate and photovoltaic units which are disposed on the transparent substrate and arranged toward the display module, and the photovoltaic unit disposed in the display area comprises a transparent front electrode disposed on the transparent substrate, a light absorption layer disposed on the transparent front electrode and a transparent back electrode disposed on the light absorption layer; and the photovoltaic unit disposed in the non-display area comprises a transparent front electrode disposed on the transparent substrate, a light absorption layer disposed on the transparent front electrode and a metal back electrode disposed on the light absorption layer.

A process for manufacturing a multilayered thin film, includes: forming a photovoltaic conversion layer, comprising Cu.sub.2O as a main component, on a first transparent electrode; and placing, under a first atmosphere at an oxygen level of from 5.0×10.sup.−8 [g/L] to 5.0×10.sup.−5 [g/L] for 1 h to 1600 h, a member having the photovoltaic conversion layer formed on the first transparent electrode.

A process for manufacturing a multilayered thin film, includes: forming a photovoltaic conversion layer, comprising Cu.sub.2O as a main component, on a first transparent electrode; and placing, under a first atmosphere at an oxygen level of from 5.0×10.sup.−8 [g/L] to 5.0×10.sup.−5 [g/L] for 1 h to 1600 h, a member having the photovoltaic conversion layer formed on the first transparent electrode.

The present invention generally relates to artificial photosystems and methods of their use, for example in artificial photosynthesis, wherein the artificial photosystems comprise one or more light-harvesting antenna (LHA) comprising a conjugated polyelectrolyte (CPE) complex (CPEC) comprising a donor CPE and an acceptor CPE, wherein the donor CPE and acceptor CPE are an electronic energy transfer (EET) donor/acceptor pair.

The present invention generally relates to artificial photosystems and methods of their use, for example in artificial photosynthesis, wherein the artificial photosystems comprise one or more light-harvesting antenna (LHA) comprising a conjugated polyelectrolyte (CPE) complex (CPEC) comprising a donor CPE and an acceptor CPE, wherein the donor CPE and acceptor CPE are an electronic energy transfer (EET) donor/acceptor pair.

A method for recovering a resource from a CIGS thin-film solar cell to be recycled includes a) providing the CIGS thin-film solar cell, and b) subjecting the CIGS thin-film solar cell to a cooling treatment at a predetermined temperature, such that a light absorbing unit of the CIGS thin-film solar cell can be recovered due to thermal strain difference of materials of the CIGS thin-film solar cell.