Structures including crystalline material disposed in openings defined in a non-crystalline mask layer disposed over a substrate. A photovoltaic cell may be disposed above the crystalline material.

Structures including crystalline material disposed in openings defined in a non-crystalline mask layer disposed over a substrate. A photovoltaic cell may be disposed above the crystalline material.

A solar cell is equipped with: a wafer; an n-type laminated body that is provided on the first main surface side of the wafer; and a p-type laminated body, which is provided on the first main surface side of the wafer such that the p-type laminated body is adjacent to the n-type laminated body in the X direction, and which extends in the Y direction. The wafer has: a lightly doped region that is doped to be n type; and a plurality of first main surface-side highly doped regions, which have an n-type dopant concentration that is higher than that of the lightly doped region, and which are provided between the lightly doped region and the p-type laminated body. The first main surface-side highly doped regions are discretely provided at intervals in the Y direction.

A system for converting solar energy to electric power and a glass for a layer of solar cells in the system. A solar panel installation comprises a solar panel with at least one solar cell formed with a stack of plural layers of photovoltaic wafer material. Each layer of wafer material has an edge direction from a recipient edge to a back edge, and the solar cell is retained within the solar panel installation with the photovoltaic wafer material disposed with the edge direction aligned with incident solar direction. Reflective material applied to facing surfaces of the photovoltaic wafer material facilitates internal reflection of photons. A glass layer has plural sheets of Graphene layered to form a Graphene Cube constructed to exhibit Multiple Excitation Generation (MEG). A method for assembling the glass fixes a top glass above a bottom glass with photovoltaic wafer material establishing a fixed distance therebetween.

A leaf inspired biomimetic light trapping scheme for ultrathin flexible graphene silicon Schottky junction solar cell. An all-dielectric approach comprising of lossless silica and titania nanoparticles is used for mimicking the two essential light trapping mechanisms of a leaf: (1) focusing and waveguiding and (2) scattering. The light trapping scheme uses two optically tuned layers and does not require any nano-structuring of the active silicon substrate, thereby ensuring that the optical gain is not offset due to recombination losses.

A deformable array of semiconductor devices, and a method of manufacturing such a deformable array. The deformable array comprises a plurality of islands, where each island contains at least one semiconductor device, and the plurality of islands are arranged in an auxetic geometry.

A method is disclosed for depositing a high-quality thin films of ultrawide bandgap oxide semiconductors at growth rates that are higher than possible using prior-art methods. Embodiments of the present invention employ LPCVD deposition using vapor formed by evaporating material as a precursor, where the material has a low vapor pressure at the growth temperature for the thin film. The vapor is carried to a reaction chamber by an inert gas, such as argon, where it mixes with a second precursor. The reaction chamber is held at a pressure that nucleation of the precursor materials occurs preferentially on the substrate surface rather than in vapor phase. The low vapor pressure of the material gives rise to growth rates on the substrate surface that a significantly faster than achievable using prior-art growth methods.

A method is disclosed for depositing a high-quality thin films of ultrawide bandgap oxide semiconductors at growth rates that are higher than possible using prior-art methods. Embodiments of the present invention employ LPCVD deposition using vapor formed by evaporating material as a precursor, where the material has a low vapor pressure at the growth temperature for the thin film. The vapor is carried to a reaction chamber by an inert gas, such as argon, where it mixes with a second precursor. The reaction chamber is held at a pressure that nucleation of the precursor materials occurs preferentially on the substrate surface rather than in vapor phase. The low vapor pressure of the material gives rise to growth rates on the substrate surface that a significantly faster than achievable using prior-art growth methods.

An optoelectronic device comprising a substrate comprising a groove having a first and a second side. The first and second sides of the groove are each coated with a conductor material and a semiconductor material. The semiconductor material on the first side of the groove and the conductor material on the second side of the groove are in contact with another semiconductor material in the groove. At the second side of the groove there is a gap between the semiconductor material on the second side of the groove and the another semiconductor material in the groove.

Disclosed herein is a solar array, which can include a plurality of solar cells arranged in a horizontal direction with each solar cell positioned substantially perpendicular to a mounting surface, and a plurality of angled reflectors arranged in a substantial parallel in the horizontal direction, each of the reflectors facing towards each of the solar cells, whereby a source light incoming from a vertical direction is reflected by the reflector to the solar cell, such that more electricity per area can be produced in a reduced area over conventional flat panel solar arrays.