A method for forming a solar cell including steps of (1) providing a semiconductor wafer having an upper surface; (2) applying an electrical contact material to the upper surface, the electrical contact material forming an electrically conductive grid that includes grid lines extending from a bus bar; (3) forming an isolation channel in the semiconductor wafer to define a solar cell portion and a wing portion, wherein the wing portion is electrically isolated from the solar cell portion, and wherein the wing portion is substantially free of the electrical contact material; (4) submerging the semiconductor wafer in a solvent, wherein formation of metal dendrites on the grid lines of the electrically conductive grid is inhibited; and (5) separating the solar cell portion from the wing portion.

A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.

A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.

A solar energy device includes a solar panel array including a plurality of solar panels, each of the solar panels being divided into solar sub-panels. The solar sub-panels have unequal shapes but equal areas. Wires electrically connect the solar sub-panels and connect the solar panels. The solar panels are secured on a base which is formed with cutouts to receive the wires. The wires are fixed to the solar sub-panels but are free to move with respect to the base.

The present invention refers to a three terminal tandem solar generation unit (1) comprising: —a first absorbing layer (7) made of a perovskite type compound, —a second absorbing layer (11, 11′), —a first and a second interdigitated front contacts (5a, 5b) arranged on the front side of the first absorbing layer (7), the first front contact (5a) having a first polarity and the second front contact (5b) having a second polarity, —a back contact (17, 17′) having the first or the second polarity arranged on the back side of the second absorbing layer (11, 11′), —an interface layer (9, 90, 9′, 90′) arranged between the first (7) and the second (11, 11′) absorbing layers comprising a first semiconductor sub-layer (9a, 90a, 9a′, 90a′) doped according to the first polarity and a second sub-layer (9b, 90b, 9b′, 90b′) doped according to the second polarity and configured for enabling carriers associated with a polarity different than the polarity of the back contact (17, 17′) to be transferred from the second absorbing layer (11, 11′) to the first absorbing layer (7) to be collected by the front contact (5a, 5b) having a polarity different than the polarity of the back contact (17, 17′).

The present invention refers to a three terminal tandem solar generation unit (1) comprising: —a first absorbing layer (7) made of a perovskite type compound, —a second absorbing layer (11, 11′), —a first and a second interdigitated front contacts (5a, 5b) arranged on the front side of the first absorbing layer (7), the first front contact (5a) having a first polarity and the second front contact (5b) having a second polarity, —a back contact (17, 17′) having the first or the second polarity arranged on the back side of the second absorbing layer (11, 11′), —an interface layer (9, 90, 9′, 90′) arranged between the first (7) and the second (11, 11′) absorbing layers comprising a first semiconductor sub-layer (9a, 90a, 9a′, 90a′) doped according to the first polarity and a second sub-layer (9b, 90b, 9b′, 90b′) doped according to the second polarity and configured for enabling carriers associated with a polarity different than the polarity of the back contact (17, 17′) to be transferred from the second absorbing layer (11, 11′) to the first absorbing layer (7) to be collected by the front contact (5a, 5b) having a polarity different than the polarity of the back contact (17, 17′).

A solar cell is provided with: an n-type single crystal silicon substrate; an n-type amorphous silicon layer disposed on a first main surface of the n-type single crystal silicon substrate; a light receiving surface electrode disposed on the n-type amorphous silicon layer; a p-type amorphous silicon layer disposed on a second main surface of the n-type single crystal silicon substrate; and a rear surface electrode disposed on the p-type amorphous silicon layer. The n-type single crystal silicon substrate has a resistivity within a range of 3.5-13 Ωcm. An i-type amorphous silicon layer may be provided between the n-type single crystal silicon substrate and the n-type amorphous silicon layer, and another i-type amorphous silicon layer may be provided between the n-type single crystal silicon substrate and the p-type amorphous silicon layer.

A solar cell is provided with: an n-type single crystal silicon substrate; an n-type amorphous silicon layer disposed on a first main surface of the n-type single crystal silicon substrate; a light receiving surface electrode disposed on the n-type amorphous silicon layer; a p-type amorphous silicon layer disposed on a second main surface of the n-type single crystal silicon substrate; and a rear surface electrode disposed on the p-type amorphous silicon layer. The n-type single crystal silicon substrate has a resistivity within a range of 3.5-13 Ωcm. An i-type amorphous silicon layer may be provided between the n-type single crystal silicon substrate and the n-type amorphous silicon layer, and another i-type amorphous silicon layer may be provided between the n-type single crystal silicon substrate and the p-type amorphous silicon layer.

Solar cells having a plurality of sub-cells coupled by metallization structures, and singulation approaches to forming solar cells having a plurality of sub-cells coupled by metallization structures, are described. In an example, a solar cell, includes a plurality of sub-cells, each of the sub-cells having a singulated and physically separated semiconductor substrate portion. Adjacent ones of the singulated and physically separated semiconductor substrate portions have a groove there between. The solar cell also includes a monolithic metallization structure. A portion of the monolithic metallization structure couples ones of the plurality of sub-cells. The groove between adjacent ones of the singulated and physically separated semiconductor substrate portions exposes a portion of the monolithic metallization structure.

Solar cells having a plurality of sub-cells coupled by metallization structures, and singulation approaches to forming solar cells having a plurality of sub-cells coupled by metallization structures, are described. In an example, a solar cell, includes a plurality of sub-cells, each of the sub-cells having a singulated and physically separated semiconductor substrate portion. Adjacent ones of the singulated and physically separated semiconductor substrate portions have a groove there between. The solar cell also includes a monolithic metallization structure. A portion of the monolithic metallization structure couples ones of the plurality of sub-cells. The groove between adjacent ones of the singulated and physically separated semiconductor substrate portions exposes a portion of the monolithic metallization structure.