The invention relates to a back-side contact solar cell including a semiconductor substrate, in particular a silicon wafer, including a front side and a back side, the solar cell having electrodes of a first polarity and electrodes of a second polarity on the back side, wherein a tunnel layer and a highly doped silicon layer are positioned under the electrodes of a first polarity, and the electrodes of the second polarity make direct electrical and mechanical contact with the semiconductor substrate.

The invention relates to a back-side contact solar cell including a semiconductor substrate, in particular a silicon wafer, including a front side and a back side, the solar cell having electrodes of a first polarity and electrodes of a second polarity on the back side, wherein a tunnel layer and a highly doped silicon layer are positioned under the electrodes of a first polarity, and the electrodes of the second polarity make direct electrical and mechanical contact with the semiconductor substrate.

A selective emitter for thermophotovoltaic energy conversion and method for fabricating the same is disclosed. The selective emitter includes a germanium wafer, and a reflective layer deposited on a first side of the germanium wafer. The reflective layer includes tungsten. The selective emitter also includes an anti-reflective layer deposited on a second side of the germanium wafer opposite the first side. The anti-reflective layer includes Si.sub.3N.sub.4. The method for fabricating a selective emitter for thermophotovoltaic energy conversion includes deposing a reflective layer on a first side of a germanium wafer, and deposing an anti-reflective layer on a second side of the germanium wafer, the first side being opposite the second side. The germanium wafer may be undoped. The reflective layer may be sputtered onto the germanium wafer. The anti-reflective layer may be deposited on the germanium wafer using plasma-enhanced chemical vapor deposition.

A selective emitter for thermophotovoltaic energy conversion and method for fabricating the same is disclosed. The selective emitter includes a germanium wafer, and a reflective layer deposited on a first side of the germanium wafer. The reflective layer includes tungsten. The selective emitter also includes an anti-reflective layer deposited on a second side of the germanium wafer opposite the first side. The anti-reflective layer includes Si.sub.3N.sub.4. The method for fabricating a selective emitter for thermophotovoltaic energy conversion includes deposing a reflective layer on a first side of a germanium wafer, and deposing an anti-reflective layer on a second side of the germanium wafer, the first side being opposite the second side. The germanium wafer may be undoped. The reflective layer may be sputtered onto the germanium wafer. The anti-reflective layer may be deposited on the germanium wafer using plasma-enhanced chemical vapor deposition.

Provided are a light-emitting panel and a display device. The light-emitting panel includes a driving substrate and a plurality of light-emitting elements. The driving substrate includes a base substrate, a plurality of driver circuits, and a plurality of photoelectric conversion units. The driver circuits and the photoelectric conversion units are located on the base substrate. A photoelectric conversion unit includes a first doped region and a second doped region. The light-emitting elements are located on a side of the driving substrate. The orthographic projection of a light-emitting element among at least part of the light-emitting elements on the driving substrate is a first projection. An orthographic projection of the photoelectric conversion unit on the driving substrate is located between two adjacent first projections. A driver circuit and the photoelectric conversion unit are each electrically connected to the light-emitting element.

A reflector including a substrate and a plurality of alternating layers of two materials having different indices of refraction disposed on the substrate, wherein the reflector exhibits a central peak in reflectance vs wavelength and the reflectance of the high-energy side-lobes is increased in intensity and the reflectance of the low-energy side-lobes is reduced in intensity and method for making the reflector is disclosed.

A reflector including a substrate and a plurality of alternating layers of two materials having different indices of refraction disposed on the substrate, wherein the reflector exhibits a central peak in reflectance vs wavelength and the reflectance of the high-energy side-lobes is increased in intensity and the reflectance of the low-energy side-lobes is reduced in intensity and method for making the reflector is disclosed.

The present invention relates to an optoelectronic device comprising a substrate having a first and a second substantially planar face, a series of grooves in the first substantially planar face, and a first and a second electrical conductor on the second substantially planar face; wherein a first face of the first electrical conductor and a first face of the second electrical conductor are reflective.

The present invention relates to an optoelectronic device comprising a substrate having a first and a second substantially planar face, a series of grooves in the first substantially planar face, and a first and a second electrical conductor on the second substantially planar face; wherein a first face of the first electrical conductor and a first face of the second electrical conductor are reflective.

Described herein is a photovoltaic module, which includes PV cells capable of converting light incoming from a front side and from a rear side (3) and a transparent rear side including a rear surface carrying a structured layer (9), where the lower surface of the structured layer (9) is the lower surface of the module, and where the surface of layer (9) is structured by parallel V-shaped grooves of depth h2 or less than h2, where the lateral faces of the grooves of depth less than h2 form a groove angle beta and adjacent faces of neighbouring grooves form a peak of apex angle alpha, characterized in that h2 is from the range 5 to 200 micrometer, and each pair of neighbouring grooves includes one groove of depth h2 and one groove of depth (h2−h1), where h1 ranges from 0.1 h2 to 0.9 h2.