A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

The solar cell element comprises a semiconductor substrate with first and second surfaces, a passivation layer, a protective layer positioned on the passivation layer on the second surface, and a collector electrode. The collector electrode includes a first portion on the protective layer, and a second portion connected to the second surface in a plurality of hole rows each including holes that penetrate the passivation layer and the protective layer and are arranged along a first direction. When first and second hole rows adjacent in a second direction that intersects with the first direction are viewed in a plane perspective facing the second direction, the second hole row includes a third hole that overlaps a gap between first and second holes in a mutually adjacent state in the first hole row and further overlaps a part of at least one of the first and second holes.

The solar cell element comprises a semiconductor substrate with first and second surfaces, a passivation layer, a protective layer positioned on the passivation layer on the second surface, and a collector electrode. The collector electrode includes a first portion on the protective layer, and a second portion connected to the second surface in a plurality of hole rows each including holes that penetrate the passivation layer and the protective layer and are arranged along a first direction. When first and second hole rows adjacent in a second direction that intersects with the first direction are viewed in a plane perspective facing the second direction, the second hole row includes a third hole that overlaps a gap between first and second holes in a mutually adjacent state in the first hole row and further overlaps a part of at least one of the first and second holes.

A photoelectric conversion device includes a photoelectric conversion element formed of a polar material and including no p-n junction, and first and second electrodes provided on the photoelectric conversion element and arranged at an interval. Space-inversion symmetry of a structure of the photoelectric conversion element is broken. The first and second electrodes are each formed of a metal material that generates no substantial potential barrier preventing majority carriers for the photoelectric conversion element from moving from the electrode to the photoelectric conversion element.

A photoelectric conversion device includes a photoelectric conversion element formed of a polar material and including no p-n junction, and first and second electrodes provided on the photoelectric conversion element and arranged at an interval. Space-inversion symmetry of a structure of the photoelectric conversion element is broken. The first and second electrodes are each formed of a metal material that generates no substantial potential barrier preventing majority carriers for the photoelectric conversion element from moving from the electrode to the photoelectric conversion element.

A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

The present invention is directed to photovoltaic and photogalvanic devices and methods of generating electrical energy and power or detecting light therefrom, based on a novel nano-enhanced bulk photovoltaic effect using non-centrosymmetric crystals, including ferroelectric and piezoelectric materials, where the non-centrosymmetry is the equilibrium state or it is static or dynamically induced. In certain embodiments, the device comprises a layer of non-centrosymmetric crystalline materials, and a plurality of electrodes disposed in an array upon or penetrating into at least one surface of the crystalline material, the electrodes being optimally spaced to capture the ballistic carriers generated upon irradiation of the crystalline material.

The present invention is directed to photovoltaic and photogalvanic devices and methods of generating electrical energy and power or detecting light therefrom, based on a novel nano-enhanced bulk photovoltaic effect using non-centrosymmetric crystals, including ferroelectric and piezoelectric materials, where the non-centrosymmetry is the equilibrium state or it is static or dynamically induced. In certain embodiments, the device comprises a layer of non-centrosymmetric crystalline materials, and a plurality of electrodes disposed in an array upon or penetrating into at least one surface of the crystalline material, the electrodes being optimally spaced to capture the ballistic carriers generated upon irradiation of the crystalline material.

A multijunction solar cell includes a base substrate comprising a Group IV semiconductor and a dopant of a first carrier type. A patterned emitter is formed at a first surface of the base substrate. The patterned emitter comprises a plurality of well regions doped with a dopant of a second carrier type in the Group IV semiconductor. The base substrate including the patterned emitter form a first solar subcell. The multijunction solar cell further comprises an upper structure comprising one or more additional solar subcells over the first solar subcell. Methods of making a multijunction solar cell are also described.