The present invention provides a method for manufacturing a solar cell including: preparing a semiconductor silicon substrate which has an electrode, which is formed by baking an electrode precursor containing Ag powder on at least one main surface, has a PN junction, and is less than 100° C.; and performing an annealing treatment to the semiconductor silicon substrate at 100° C. or more and 450° C. or less. Consequently, there is provided the method for manufacturing a solar cell which suppresses a degradation phenomenon that an output of the solar cell is lowered when the solar cell is left as it stands at a room temperature in the atmosphere.

A solar cell panel is disclosed. The disclosed solar cell panel includes a semiconductor substrate, a conductive region disposed in or on the semiconductor substrate, an electrode connected to the conductive region, a lead electrically connected to the electrode. The electrode includes finger lines, and a bus bar line extending across the finger lines, and electrically connected to the lead. First and second end edge areas are arranged at opposite ends of the bus bar line disposed adjacent to opposite edges of the semiconductor substrate, respectively. The bus bar line includes electrode portions respectively disposed at the first end second end edge areas. Each electrode portion includes an opening formed through the each electrode portion, and an outermost end disposed at a position flush with corresponding ones of the outermost ones of the finger lines or a position outwards of the corresponding outermost finger lines.

A solar cell panel is disclosed. The disclosed solar cell panel includes a semiconductor substrate, a conductive region disposed in or on the semiconductor substrate, an electrode connected to the conductive region, a lead electrically connected to the electrode. The electrode includes finger lines, and a bus bar line extending across the finger lines, and electrically connected to the lead. First and second end edge areas are arranged at opposite ends of the bus bar line disposed adjacent to opposite edges of the semiconductor substrate, respectively. The bus bar line includes electrode portions respectively disposed at the first end second end edge areas. Each electrode portion includes an opening formed through the each electrode portion, and an outermost end disposed at a position flush with corresponding ones of the outermost ones of the finger lines or a position outwards of the corresponding outermost finger lines.

An ingot having a first surface, a second surface opposite to the first surface, and a third surface extending in a first direction from the second surface to the first surface and connecting the first and second surfaces includes a first mono-like crystalline portion, a first intermediate portion including one or more mono-like crystalline sections, and a second mono-like crystalline portion sequentially adjacent to one another in a second direction perpendicular to the first direction. The first and second mono-like crystalline portions have a greater width than the first intermediate portion in the second direction. A first boundary between the first mono-like crystalline portion and the first intermediate portion and a second boundary between the second mono-like crystalline portion and the first intermediate portion each include a coincidence boundary. At least one of the first or second boundary is curved in an imaginary cross section perpendicular to the first direction.

An ingot having a first surface, a second surface opposite to the first surface, and a third surface extending in a first direction from the second surface to the first surface and connecting the first and second surfaces includes a first mono-like crystalline portion, a first intermediate portion including one or more mono-like crystalline sections, and a second mono-like crystalline portion sequentially adjacent to one another in a second direction perpendicular to the first direction. The first and second mono-like crystalline portions have a greater width than the first intermediate portion in the second direction. A first boundary between the first mono-like crystalline portion and the first intermediate portion and a second boundary between the second mono-like crystalline portion and the first intermediate portion each include a coincidence boundary. At least one of the first or second boundary is curved in an imaginary cross section perpendicular to the first direction.

A back contact structure of a solar cell, includes: a silicon substrate, the silicon substrate including a back surface including a plurality of recesses disposed at intervals; a plurality of first conductive regions and a plurality of second conductive regions disposed alternately in the plurality of recesses, where each first conductive region includes a first dielectric layer and a first doped region which are disposed successively in the plurality of recesses, and each second conductive region includes a second doped region; a second dielectric layer disposed between the plurality of first conductive regions and the plurality of second conductive regions; and a conductive layer disposed on the plurality of first conductive regions and the plurality of second conductive regions.

A back contact structure includes: a silicon substrate including a back surface including a plurality of recesses disposed at intervals; a first dielectric layer disposed on the back surface of the silicon substrate; a plurality of first doped regions disposed on the first dielectric layer and disposed inside the plurality of recesses; a plurality of second doped regions disposed on the first dielectric layer and disposed outside the plurality of recesses; a second dielectric layer disposed between the first doped regions and the second doped regions; and a conductive layer disposed on the first plurality of doped regions and the plurality of second doped regions.

A back contact structure includes: a silicon substrate including a back surface including a plurality of recesses disposed at intervals; a first dielectric layer disposed on the back surface of the silicon substrate; a plurality of first doped regions disposed on the first dielectric layer and disposed inside the plurality of recesses; a plurality of second doped regions disposed on the first dielectric layer and disposed outside the plurality of recesses; a second dielectric layer disposed between the first doped regions and the second doped regions; and a conductive layer disposed on the first plurality of doped regions and the plurality of second doped regions.

Disclosed is a solar cell. The solar cell includes a semiconductor substrate, conductivity-type regions located in or on the semiconductor substrate, electrodes conductively connected to the conductivity-type regions, and insulating films located on at least one of opposite surfaces of the semiconductor substrate, and including a first film and a second film located on the first film, the second film has a higher carbon content than that of the first film, a refractive index of the second film is equal to or less than a refractive index of the first film, and an extinction coefficient of the second film is equal to or greater than an extinction coefficient of the first film.

A photovoltaic cell and a fabricating method of the photovoltaic cell are provided. The photovoltaic cell includes: a substrate layer; an emitter layer, wherein the emitter layer is provided at a first face of the substrate layer; a plurality of front-face metal grid lines, wherein the plurality of front-face metal grid lines are provided in parallel at a side of the emitter layer that is away from the substrate layer; and a plurality of diffuse-reflection layers, wherein the plurality of diffuse-reflection layers are provided individually at a side of each of the front-face metal grid lines that are away from the emitter layer, and the diffuse-reflection layers are in correspondence with the front-face metal grid lines one to one. The diffuse-reflection layers are provided on the front-face metal grid lines to increase the diffuse reflection of the light emitting the front-face metal grid lines.