Patent classifications
H01L31/068
Solar cell
A solar cell includes a substrate having a front surface and a back surface; an emitter formed on the front surface of the substrate; a plurality of first electrodes positioned on the emitter and extended in first direction; a plurality of first bus lines positioned on the emitter and extended in second direction crossing to the first direction; a plurality of back surface field regions formed on the back surface of the substrate and extended in the first direction; a plurality of second electrodes positioned on the plurality of back surface field regions and extended in the first direction; and, a plurality of second bus lines extended in the second direction.
Solar cell having edge collection electrode and solar cell module comprising same
The present invention relates to a solar cell having an edge collecting electrode and a solar cell module comprising the same, the solar cell being capable of preventing a cell crack phenomenon caused by an interconnector and improving an adhesive characteristic of the interconnector by dividing a planar area of the solar cell into a main area and an edge area and positioning the outermost contact point of the interconnector at a boundary between the main area and the edge area, and being capable of improving carrier collecting efficiency by arranging, in the edge area, the edge collecting electrode and the branched electrode which are physically separated from the interconnector.
Solar cell, solar cell manufacturing system, and solar cell manufacturing method
An object of the present invention is to provide, at a low cost, a system and a method for manufacturing a solar cell having high conversion efficiency. A solar cell according to the present invention is characterized by including a passivation film that protects a semiconductor substrate, a first finger electrode connected to the semiconductor substrate on a main surface of the semiconductor substrate, a first bus bar electrode that intersects the first finger electrode, and an intermediate layer provided in an intersecting position of the first finger electrode and the first bus bar electrode. The solar cell is characterized in that the first finger electrode and the first bus bar electrode are electrically connected to each other via the intermediate layer.
Solar cell, solar cell manufacturing system, and solar cell manufacturing method
An object of the present invention is to provide, at a low cost, a system and a method for manufacturing a solar cell having high conversion efficiency. A solar cell according to the present invention is characterized by including a passivation film that protects a semiconductor substrate, a first finger electrode connected to the semiconductor substrate on a main surface of the semiconductor substrate, a first bus bar electrode that intersects the first finger electrode, and an intermediate layer provided in an intersecting position of the first finger electrode and the first bus bar electrode. The solar cell is characterized in that the first finger electrode and the first bus bar electrode are electrically connected to each other via the intermediate layer.
Solar cell module
A solar cell module, which is easily coordinated with the color of an exterior member at the installation position, comprises a solar cell; a light receiving side sealing material and a light receiving side protection member laminated and disposed in this order on a light receiving side with reference to the solar cell; and a back-side sealing material and a back-side protection member laminated and arranged in this order on a back side on the opposite side from the light receiving side. A value computed from a measured value of the color of reflected light combining positive reflected light and diffused reflected light which are based on light that has become incident on an object to be measured, and a measured value of the color only of the diffused reflected light based on the light that has become incident on the object to be measured, satisfies a specific condition.
Backside emitter solar cell structure having a heterojunction and method and device for producing the same
A backside emitter solar cell structure having a heterojunction, and a method and a device for producing the same. A backside intrinsic layer is first formed on the back side of the substrate, then a frontside intrinsic layer and a frontside doping layer are formed on the front side of the substrate, and finally a backside doping layer is formed on the back side of the substrate.
SOLAR CELL, METHOD FOR MANUFACTURING SOLAR CELL, AND SOLAR CELL MODULE
A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.
SOLAR CELL, METHOD FOR MANUFACTURING SOLAR CELL, AND SOLAR CELL MODULE
A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.
LASER STOP LAYER FOR FOIL-BASED METALLIZATION OF SOLAR CELLS
Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. For example, a method of fabricating a solar cell involves forming a plurality of alternating N-type and P-type semiconductor regions in or above a substrate. The method also involves forming a paste between adjacent ones of the alternating N-type and P-type semiconductor regions. The method also involves curing the paste to form non-conductive material regions in alignment with locations between the alternating N-type and P-type semiconductor regions. The method also involves adhering a metal foil to the alternating N-type and P-type semiconductor regions. The method also involves laser ablating through the metal foil in alignment with the locations between the alternating N-type and P-type semiconductor regions to isolate regions of remaining metal foil in alignment with the alternating N-type and P-type semiconductor regions. The non-conductive material regions act as a laser stop during the laser ablating.
SOLAR CELL, METHOD FOR PRODUCING SAME AND SOLAR MODULE
A solar cell, a method for producing a solar cell, and a solar module are provided. The solar cell includes: an N-type substrate and a P-type emitter formed on a front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed over the front surface of the substrate and in a direction away from the P-type emitter, and a passivated contact structure disposed on a rear surface of the substrate. The first passivation layer includes a first Silicon oxynitride (SiO.sub.xN.sub.y) material, where x > y. The second passivation layer includes a first silicon nitride (Si.sub.mN.sub.n) material, where m > n. The third passivation layer includes a second silicon oxynitride (SiO.sub.iN.sub.j) material, where a ratio of i/j∈ [0.97, 7.58].