H01L31/07

Nanoscale solar energy conversion
20200152814 · 2020-05-14 ·

A system for converting solar energy to electric power and a glass for a layer of solar cells in the system. A solar panel installation comprises a solar panel with at least one solar cell formed with a stack of plural layers of photovoltaic wafer material. Each layer of wafer material has an edge direction from a recipient edge to a back edge, and the solar cell is retained within the solar panel installation with the photovoltaic wafer material disposed with the edge direction aligned with incident solar direction. Reflective material applied to facing surfaces of the photovoltaic wafer material facilitates internal reflection of photons. A glass layer has plural sheets of Graphene layered to form a Graphene Cube constructed to exhibit Multiple Excitation Generation (MEG). A method for assembling the glass fixes a top glass above a bottom glass with photovoltaic wafer material establishing a fixed distance therebetween.

Nanoscale solar energy conversion
20200152814 · 2020-05-14 ·

A system for converting solar energy to electric power and a glass for a layer of solar cells in the system. A solar panel installation comprises a solar panel with at least one solar cell formed with a stack of plural layers of photovoltaic wafer material. Each layer of wafer material has an edge direction from a recipient edge to a back edge, and the solar cell is retained within the solar panel installation with the photovoltaic wafer material disposed with the edge direction aligned with incident solar direction. Reflective material applied to facing surfaces of the photovoltaic wafer material facilitates internal reflection of photons. A glass layer has plural sheets of Graphene layered to form a Graphene Cube constructed to exhibit Multiple Excitation Generation (MEG). A method for assembling the glass fixes a top glass above a bottom glass with photovoltaic wafer material establishing a fixed distance therebetween.

SUPER CMOS DEVICES ON A MICROELECTRONICS SYSTEM
20200144248 · 2020-05-07 ·

A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P and NSi beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.

SUPER CMOS DEVICES ON A MICROELECTRONICS SYSTEM
20200144248 · 2020-05-07 ·

A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P and NSi beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.

Solar antenna array fabrication

A solar antenna array may comprise an array of carbon nanotube antennas that may capture and convert sunlight into electrical power. A method for constructing the solar antenna array from a glass top down to aluminum over a plastic bottom such that light passing through the glass top and/or reflected off the aluminum both may be captured by the antennas sandwiched between. Techniques for patterning the glass to further direct the light toward the antennas and techniques for continuous flow fabrication and testing are also described.

Solar antenna array fabrication

A solar antenna array may comprise an array of carbon nanotube antennas that may capture and convert sunlight into electrical power. A method for constructing the solar antenna array from a glass top down to aluminum over a plastic bottom such that light passing through the glass top and/or reflected off the aluminum both may be captured by the antennas sandwiched between. Techniques for patterning the glass to further direct the light toward the antennas and techniques for continuous flow fabrication and testing are also described.

Metallo-Graphene Nanocomposites and Methods for using Metallo-Graphene Nanocomposites for Electromagnetic Energy Conversion

Nanocomposites in accordance with many embodiments of the invention can be capable of converting electromagnetic radiation to an electric signal, such as signals in the form of current or voltage. In some embodiments, metallic nanostructures are integrated with graphene material to form a metallo-graphene nanocomposite. Graphene is a material that has been explored for broadband and ultrafast photodetection applications because of its distinct optical and electronic characteristics. However, the low optical absorption and the short carrier lifetime of graphene can limit its use in many applications. Nanocomposites in accordance with various embodiments of the invention integrates metallic nanostructures, such as (but not limited to) plasmonic nanoantennas and metallic nanoparticles, with a graphene-based material to form metallo-graphene nanostructures that can offer high responsivity, ultrafast temporal responses, and broadband operation in a variety of optoelectronic applications.

Methods of producing a photovoltaic junction including ligand exchange of quantum dots of a film

The present disclosure is directed to methods for producing a photovoltaic junction that can include coating a bare junction with a composition. In one embodiment, the composition includes a plurality of quantum dots to create a film; exposing the film to a ligand to create a first layer; coating the first layer with the composition to form a film on the first layer; and exposing the film on the first layer to the ligand to create a second layer.

Methods of producing a photovoltaic junction including ligand exchange of quantum dots of a film

The present disclosure is directed to methods for producing a photovoltaic junction that can include coating a bare junction with a composition. In one embodiment, the composition includes a plurality of quantum dots to create a film; exposing the film to a ligand to create a first layer; coating the first layer with the composition to form a film on the first layer; and exposing the film on the first layer to the ligand to create a second layer.

Electric circuit arrangement to determine a level of an excess bias voltage of a single photon avalanche diode
11921150 · 2024-03-05 · ·

An electric circuit arrangement to determine a level of an excess bias voltage of a single photon avalanche diode comprises an evaluation circuit being configured to determine a level of an excess bias voltage of the single photon avalanche diode in dependence on a signal course of an output signal of the single photon avalanche diode. In a first operational cycle of the circuit arrangement a voltage jump to the level of the excess bias voltage is generated at an output terminal, when a photon hits a photosensitive area of the single photon avalanche diode. In a subsequent second operational cycle, the output terminal of the single photon avalanche diode is coupled to a supply terminal.