A photovoltaic device with an improved n-type partner and a method for making the same. The device includes: a transparent substrate; a transparent conductive electrode layer disposed on the transparent substrate; an n-type layer of Zn.sub.1-xMg.sub.xO, wherein 0<x≦1, disposed on the transparent conductive electrode layer; a chalcogen absorber layer disposed on the n-type layer; and a conductive layer disposed on the chalcogen absorber layer. The method includes: forming a transparent conductive electrode layer on a transparent substrate; forming an n-type layer of Zn.sub.1-xMg.sub.xO, wherein 0<x≦1, on the transparent conductive electrode layer; forming a chalcogen absorber layer on the n-type layer; forming a conductive layer on the chalcogen absorber layer; and annealing to form the device. Another device having a superstrate configuration with the order of the layers reversed and a method for making the same is provided.

A photovoltaic device with an improved n-type partner and a method for making the same. The device includes: a transparent substrate; a transparent conductive electrode layer disposed on the transparent substrate; an n-type layer of Zn.sub.1-xMg.sub.xO, wherein 0<x≦1, disposed on the transparent conductive electrode layer; a chalcogen absorber layer disposed on the n-type layer; and a conductive layer disposed on the chalcogen absorber layer. The method includes: forming a transparent conductive electrode layer on a transparent substrate; forming an n-type layer of Zn.sub.1-xMg.sub.xO, wherein 0<x≦1, on the transparent conductive electrode layer; forming a chalcogen absorber layer on the n-type layer; forming a conductive layer on the chalcogen absorber layer; and annealing to form the device. Another device having a superstrate configuration with the order of the layers reversed and a method for making the same is provided.

Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer.

Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields, greater efficiency, and lower costs. Certain solar cells may be from a different manufacturing process and further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.

Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields, greater efficiency, and lower costs. Certain solar cells may be from a different manufacturing process and further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.

A method for producing a layer system for thin-film solar cells is described, wherein a) an absorber layer is produced, and b) a buffer layer is produced on the absorber layer, wherein the buffer layer contains sodium indium sulfide according to the formula Na.sub.xIn.sub.y-x/3S with 0.063≦x≦0.625 and 0.681≦y≦1.50, and wherein the buffer layer is produced, without deposition of indium sulfide, based on at least one sodium thioindate compound.

A method for producing a layer system for thin-film solar cells is described, wherein a) an absorber layer is produced, and b) a buffer layer is produced on the absorber layer, wherein the buffer layer contains sodium indium sulfide according to the formula Na.sub.xIn.sub.y-x/3S with 0.063≦x≦0.625 and 0.681≦y≦1.50, and wherein the buffer layer is produced, without deposition of indium sulfide, based on at least one sodium thioindate compound.

A structural body that includes a film that has a phase-separated nanostructure where a separate columnar shape phase is dispersed in a matrix phase that are phase-separated in a state of thermal equilibrium. The matrix phase is formed from any one of a p-type semiconductor material and an n-type semiconductor material, and the separate columnar shape phase is formed from the other semiconductor material. The film is formed on a substrate such that the separate columnar shaped phase and the matrix phase have three-dimensional junction planes.