Disclosed is a quantum dot based solar cell device which includes a substrate, a light harvesting structure sandwiched between electrically conducing layers, with at least one electrically conducting layer being substantially transparent with the light harvesting structure being located on the substrate. The light harvesting structure includes a layer of semiconducting quantum dots, with this layer of semiconducting quantum dots including at least two distinct sets of semiconducting quantum dots which are homogenously mixed. One of the two distinct sets of semiconducting quantum dots has a first bandgap and the at least one other distinct set of semiconducting quantum dots has a second bandgap different from the first bandgap. Both sets of semiconducting quantum dots are passivated with any one or combination of halides and pseudo-halides. Upon illumination, the quantum dot solar cell device exhibits a photovoltage that is intermediate between a photovoltage that would generated separately if the solar cell device had only the first set of quantum dots and a photovoltage that would be generated separately if the solar cell device had only the second set of quantum dots.

Disclosed is a quantum dot based solar cell device which includes a substrate, a light harvesting structure sandwiched between electrically conducing layers, with at least one electrically conducting layer being substantially transparent with the light harvesting structure being located on the substrate. The light harvesting structure includes a layer of semiconducting quantum dots, with this layer of semiconducting quantum dots including at least two distinct sets of semiconducting quantum dots which are homogenously mixed. One of the two distinct sets of semiconducting quantum dots has a first bandgap and the at least one other distinct set of semiconducting quantum dots has a second bandgap different from the first bandgap. Both sets of semiconducting quantum dots are passivated with any one or combination of halides and pseudo-halides. Upon illumination, the quantum dot solar cell device exhibits a photovoltage that is intermediate between a photovoltage that would generated separately if the solar cell device had only the first set of quantum dots and a photovoltage that would be generated separately if the solar cell device had only the second set of quantum dots.

A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type that is positioned on the substrate, a first field region of the first conductive type that is positioned on the substrate to be separated from the emitter region, a first electrode electrically connected to the emitter region, a second electrode electrically connected to the first field region, and an insulating region positioned on at least one of the emitter region and the first field region.

A photoelectrode, photovoltaic device and photoelectrochemical cell and methods of making are disclosed. The photoelectrode includes an electrode at least partially formed of FeO combined with at least one of lithium, hydrogen, sodium, magnesium, manganese, zinc, and nickel. The electrode may be doped with at least one of lithium, hydrogen, and sodium. The electrode may be alloyed with at least one of magnesium, manganese, zinc, and nickel.

A photoelectrode, photovoltaic device and photoelectrochemical cell and methods of making are disclosed. The photoelectrode includes an electrode at least partially formed of FeO combined with at least one of lithium, hydrogen, sodium, magnesium, manganese, zinc, and nickel. The electrode may be doped with at least one of lithium, hydrogen, and sodium. The electrode may be alloyed with at least one of magnesium, manganese, zinc, and nickel.

A structure includes a substrate having a first semiconductor material. The substrate has a recess. A bottom portion of the recess has a first sidewall and a second sidewall. The first sidewall intersects the second sidewall. The structure further includes an isolation feature surrounding the recess and a second semiconductor material disposed in the recess and in contact with the first semiconductor material. The second semiconductor material has lattice mismatch to the first semiconductor material.

A method of fabricating a color tunable thin film photovoltaic device includes depositing a layer of a semiconducting compound configured to exhibit a photovoltaic effect, and depositing a buffer layer over the layer of the semiconducting compound. Depositing transparent conducting oxides (TCO) over the buffer layer is followed by selecting two or more layers of optically transparent materials such that constructive interference among wavelengths reflected by the buffer layer, the TCO, and the two or more layers results in a desired exhibited color and depositing the two or more layers of the optically transparent materials above the TCO.

Provided is a LED light source package comprising a circuit board, a light source seated on an upper portion of the circuit board, and a lens structure arranged on the upper portion of the circuit board via the light source. A surface that faces the light source in the lens structure includes a first inclined surface that projects toward the light source as going to a center portion of the lens structure.

Architectures for tandem solar cell including two thin films forming a top layer and a bottom layer. Such cells can be bi-facial. Exemplary materials used for the top layer are CIGS (CGS), perovskites (Sn and Ge), amorphous silicon (a-Si), copper oxide, tin sulfide, CZTS and III-V materials. For the bottom layer an inorganic film such as either silicon or germanium may be used. In general, the architecture includes of a glass, plastic or metal substrate and a buffer layer, either an oxide insulator or nitride conductor.

A photovoltaic (PV) device including: (a) a p-n junction having (i) p-type silicon substrate with an Al-doped P++ surface, (ii) a wide band intrinsic AlP region having a first side formed on the Al-doped P++ surface of the silicon substrate, and (iii) an Si-doped n++ surface formed on a second side of the AlP region that is opposite to the first side; (b) charged quantum dots formed on the Si-doped n++ surface of the p-n junction and optionally (c) an electrode connected to each side of the device; wherein the charged quantum dots are operatively linked to the p-n junction to enable electrons harvested from IR photons absorbed by the quantum dots to be harvested with electrons harvested from photons absorbed by the p-n junction and wherein the wide band intrinsic AlP region is configured to inhibit leakage of hole current. Also, a method for forming the PV device.