Various embodiments of the present application are directed towards a method for forming a semiconductor-on-insulator (SOI) substrate comprising a trap-rich layer with small grain sizes, as well as the resulting SOI substrate. In some embodiments, an amorphous silicon layer is deposited on a high-resistivity substrate. A rapid thermal anneal (RTA) is performed to crystallize the amorphous silicon layer into a trap-rich layer of polysilicon in which a majority of grains are equiaxed. An insulating layer is formed over the trap-rich layer. A device layer is formed over the insulating layer and comprises a semiconductor material. Equiaxed grains are smaller than other grains (e.g., columnar grains). Since a majority of grains in the trap-rich layer are equiaxed, the trap-rich layer has a high grain boundary area and a high density of carrier traps. The high density of carrier traps may, for example, reduce the effects of parasitic surface conduction (PSC).

An infrared sensor includes: a base substrate; a bolometer infrared receiver; a first beam; and a second beam. Each of the first and second beams has a connection portion connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate, and is physically joined to the infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams to be away from the base substrate. The infrared receiver includes a resistance change portion including a resistance change material the electrical resistance of which changes with temperature. The resistance change portion includes an amorphous semiconductor, and the first and second beams include a crystalline semiconductor made of the same base material as the resistance change material, and is electrically connected to the resistance change portion at the separated portion.

The present disclosure provides a photodiode, a manufacturing method thereof, and a display screen. The photodiode includes: a first electrode including a first sub-part and a second sub-part disposed at an interval, wherein the second sub-part includes a first end and a second end; a connecting part disposed on the first sub-part, the first end, and a substrate corresponding to a gap between the first sub-part and the second sub-part; and a light converting part and a second electrode disposed on the second end in sequence.

The instant disclosure provides an optical component packaging structure which includes a far-infrared sensor chip, a first metal layer, a packaging housing and a covering member. The far-infrared sensor chip includes a semiconductor substrate and a semiconductor stack structure. The semiconductor substrate has a first surface, a second surface which is opposite to the first surface, and a cavity. The semiconductor stack structure is disposed on the first surface of the semiconductor substrate, and a part of the semiconductor stack structure is located above the cavity. The first metal layer is disposed on the second surface of the semiconductor substrate, the packaging housing is used to encapsulate the far-infrared sensor chip and expose at least a part of the far-infrared sensor chip, and the covering member is disposed above the semiconductor stack structure.

The instant disclosure provides an optical component packaging structure which includes a far-infrared sensor chip, a first metal layer, a packaging housing and a covering member. The far-infrared sensor chip includes a semiconductor substrate and a semiconductor stack structure. The semiconductor substrate has a first surface, a second surface which is opposite to the first surface, and a cavity. The semiconductor stack structure is disposed on the first surface of the semiconductor substrate, and a part of the semiconductor stack structure is located above the cavity. The first metal layer is disposed on the second surface of the semiconductor substrate, the packaging housing is used to encapsulate the far-infrared sensor chip and expose at least a part of the far-infrared sensor chip, and the covering member is disposed above the semiconductor stack structure.

Described herein is a detector for detecting optical radiation, especially within the infrared spectral range, specifically with regard to sensing at least one of transmissivity, absorption, emission and reflectivity, being capable of avoiding or diminishing a cross detection between sensor areas, specifically between adjacent sensor areas, thus, avoiding or diminishing a deterioration of a measurement based on the at least one sensor signal.

The use of silicon or vanadium oxide nanocomposite consisting of graphene deposited on top of an existing amorphous silicon or vanadium oxide microbolometer can result in a higher sensitivity IR detector. An IR bolometer type detector consisting of a thermally isolated nano-sized (<one micron feature size) electro-mechanical structure comprised of Si3N4, SiO2 thins films, suspended over a cavity with a copper thin film reflecting surface is described. On top of the suspended thin film is a nanostructure composite comprised of graphene monolayers, covered with various surface densities of VoXy or amorphous nanoparticles, followed by another graphene layer. The two conducting legs are connected to a readout integrated circuit (ROIC) fabricated on a CMOS wafer underneath. The nanostructure is fabricated after the completion of the ROIC process and is integrate able with the CMOS process.

The present invention relates to an optical sensor, a detector comprising the optical sensor for an optical detection of at least one object, a method for manufacturing the optical sensor and various uses of the optical sensor and the detector. Furthermore, the invention relates to a human-machine interface, an entertainment device, a scanning system, a tracking system, a stereoscopic system, and a camera. The optical sensor (110) comprises a layer (112) of at least one photoconductive material (114), at least two individual electrical contacts (136, 136) contacting the layer (112) of the photoconductive material (114), and a cover layer (116) deposited on the layer (112) of the photoconductive material (114), wherein the cover layer (116) is an amorphous layer comprising at least one metal-containing compound (120). The optical sensor (110) can be supplied as a non-bulkyhermetic package which, nevertheless, provides a high degree of protection against possible degradation by humidity and/or oxygen. Moreover, the cover layer (116) is capable of activating the photoconductive material (114) which results in an increased performance of the optical sensor (110). Further, the optical sensor (110) may be easily manufactured and integrated on a circuit carrier device.

A radiation detector (10) which has a multilayer structure that includes: a first electrode (34); a second electrode (49) that is disposed so as to face the first electrode; a selenium layer (48) that is disposed between the first electrode and the second electrode and contains amorphous selenium; a first blocking organic layer (38) that is adjacent to the selenium layer, between the first electrode and the selenium layer, and that contains a hole transport material having an electron affinity of 3.7 eV or less; and a second blocking organic layer (37) that is adjacent to the selenium layer, between the second electrode and the selenium layer, and that contains an electron transport material having an ionization potential of 5.9 eV or more. This radiation detector (10) has low dark current, excellent durability, and less afterimages.

A sensor, a manufacturing method thereof and an electronic device. The sensor includes: a base substrate; a thin-film transistor (TFT) disposed on the base substrate and including a source electrode; a first insulation layer disposed on the TFT and provided with a first through hole running through the first insulation layer; a conductive layer disposed in the first through hole and on part of the first insulation layer and electrically connected with the source electrode via the first through hole; a bias electrode disposed on the first insulation layer and separate from the conductive layer; a sensing active layer respectively connected with the conductive layer and the bias electrode; and an auxiliary conductive layer disposed on the conductive layer. The sensor and the manufacturing method thereof improve the conductivity and ensure normal transmission of signals by arranging the auxiliary conductive layer on the conductive layer without addition of processes.