A thin film transistor array substrate for a digital X-ray detector device including a base substrate; a plurality of data lines and a plurality of gate lines disposed on the base substrate and arranged to cross each other; a driving thin film transistor disposed above the base substrate and including a first electrode, a second electrode, a gate electrode and an active layer; a PIN diode connected to the driving thin film transistor; and at least one shielding layers disposed above the driving thin film transistor and configured to overlay the active layer, wherein the at least one shielding layers are electrically connected to the plurality of data lines.

Provided is a radioisotope battery. A radioisotope battery according to exemplary embodiments may include: a substrate; a shield layer disposed on the substrate and including a first material; a source layer embedded in the shield layer and including a second material which is a radioisotope of the first material; a PN junction layer on the shield layer and the source layer; and a window layer between the PN junction layer and the source layer.

Provided is a radioisotope battery. A radioisotope battery according to exemplary embodiments may include: a substrate; a shield layer disposed on the substrate and including a first material; a source layer embedded in the shield layer and including a second material which is a radioisotope of the first material; a PN junction layer on the shield layer and the source layer; and a window layer between the PN junction layer and the source layer.

A photoelectric conversion panel includes: a substrate; a gate line and a data line formed on the substrate; a pixel transistor connected to the gate line and the data line; a photoelectric conversion element connected to the pixel transistor; an electro-static-discharge protection circuit formed on the substrate and connected to a ground; a depletion transistor for protection connected between either the gate line or the data line and the electro-static-discharge protection circuit; and an interrupting voltage supply line configured to apply an interrupting voltage to a gate electrode of the depletion transistor for protection.

An imaging device of an embodiment comprises an aperture that transmits imaging light applied to a sample, a detector including a linear sensor comprising a linear light receiving surface extending in a first direction, a first image forming element that collects components of the imaging light in the first direction and forms an image on the light receiving surface with a first wave front aberration amount, and a second image forming element that collects components of the imaging light in a second direction orthogonal to the first direction and forms an image on the light receiving surface with a second wave front aberration amount smaller than the first wave front aberration amount.

An imaging device of an embodiment comprises an aperture that transmits imaging light applied to a sample, a detector including a linear sensor comprising a linear light receiving surface extending in a first direction, a first image forming element that collects components of the imaging light in the first direction and forms an image on the light receiving surface with a first wave front aberration amount, and a second image forming element that collects components of the imaging light in a second direction orthogonal to the first direction and forms an image on the light receiving surface with a second wave front aberration amount smaller than the first wave front aberration amount.

A radiation detection probe and a manufacturing method therefor, and a radiation detection chip. The method comprises: simulating each of a plurality of cadmium zinc telluride crystals having different three-dimensional sizes; obtaining the radiation response characteristics of each cadmium zinc telluride crystal; according to the radiation response characteristics, selecting a specific cadmium zinc telluride crystal from the plurality of cadmium zinc telluride crystals, wherein the specific cadmium zinc telluride crystal is a cadmium zinc telluride crystal having optimal performance indexes corresponding to the radiation response characteristics in the plurality of cadmium zinc telluride crystals; and configuring a first electrode and a second electrode for the specific cadmium zinc telluride crystal so as to constitute the radiation detection probe.

A radiation detection probe and a manufacturing method therefor, and a radiation detection chip. The method comprises: simulating each of a plurality of cadmium zinc telluride crystals having different three-dimensional sizes; obtaining the radiation response characteristics of each cadmium zinc telluride crystal; according to the radiation response characteristics, selecting a specific cadmium zinc telluride crystal from the plurality of cadmium zinc telluride crystals, wherein the specific cadmium zinc telluride crystal is a cadmium zinc telluride crystal having optimal performance indexes corresponding to the radiation response characteristics in the plurality of cadmium zinc telluride crystals; and configuring a first electrode and a second electrode for the specific cadmium zinc telluride crystal so as to constitute the radiation detection probe.

An avalanche diode including a gain region and a readout structure including an n-type (p-type) region having electrically isolated segments each including implanted regions; a p-type (n-type) region; and a first electrode on each of the segments. The gain region includes a p-n junction buried between the n-type region and the p-type region: an n.sup.+-type region having a higher n-type dopant density than the n-type region; a p.sup.+-type region having a higher p-type dopant density than the p-type region; and the p-n junction between the n.sup.+-type region and the p.sup.+-type region. A bias between the first electrodes and a second electrode (ohmically contacting the p-type (n-type) region) reverse biases the p-n junction. Electrons generated in response to electromagnetic radiation or charged particles generate additional electrons m the gain region through impact ionization but the segmented region comprises a low field region isolating the gain region from the first electrodes.

An avalanche diode including a gain region and a readout structure including an n-type (p-type) region having electrically isolated segments each including implanted regions; a p-type (n-type) region; and a first electrode on each of the segments. The gain region includes a p-n junction buried between the n-type region and the p-type region: an n.sup.+-type region having a higher n-type dopant density than the n-type region; a p.sup.+-type region having a higher p-type dopant density than the p-type region; and the p-n junction between the n.sup.+-type region and the p.sup.+-type region. A bias between the first electrodes and a second electrode (ohmically contacting the p-type (n-type) region) reverse biases the p-n junction. Electrons generated in response to electromagnetic radiation or charged particles generate additional electrons m the gain region through impact ionization but the segmented region comprises a low field region isolating the gain region from the first electrodes.