A photoelectric detection substrate and a manufacturing method thereof, and a photoelectric detection device are provided. The photoelectric detection substrate includes: a base substrate and a semiconductor layer arranged on the base substrate, wherein the semiconductor layer is configured to convert an optical signal into an electrical signal.

An apparatus and method, the apparatus including a charge carrier wherein the charge carrier includes a continuous three dimensional framework including a plurality of cavities throughout the framework; sensor material provided throughout the charge carrier; wherein the sensor material is configured to transduce a detected input and change conductivity of the charge carrier in dependence of the detected input.

An apparatus and method, the apparatus including a charge carrier wherein the charge carrier includes a continuous three dimensional framework including a plurality of cavities throughout the framework; sensor material provided throughout the charge carrier; wherein the sensor material is configured to transduce a detected input and change conductivity of the charge carrier in dependence of the detected input.

The present application relates to a sensing method that is carried out using an electrode that comprises an electrode substrate functionalised with sensing elements. The method involves conducting electrochemical impedance spectroscopy at a plurality of applied voltages and then integrating measurement data as a function of voltage. Also provided is an apparatus for carrying out the sensing method. The method and apparatus are suitable for a broad range of sensing applications, including the detection of diagnostic biomarkers, drug screening, development of glycoarray systems and the sensing of environmental parameters such as light intensity, temperature and humidity.

The present application relates to a sensing method that is carried out using an electrode that comprises an electrode substrate functionalised with sensing elements. The method involves conducting electrochemical impedance spectroscopy at a plurality of applied voltages and then integrating measurement data as a function of voltage. Also provided is an apparatus for carrying out the sensing method. The method and apparatus are suitable for a broad range of sensing applications, including the detection of diagnostic biomarkers, drug screening, development of glycoarray systems and the sensing of environmental parameters such as light intensity, temperature and humidity.

Inorganic perovskites doped with oxygen atoms or fluorine atoms, methods for making the doped perovskites, and hard radiation detectors incorporating the doped perovskites as photoactive layers are provided. The doped perovskites utilize lead oxide, lead fluoride, or compounds that thermally decompose into lead oxide or lead fluoride as dopant atom sources. During the crystallization of a perovskite in the presence of the dopant atom sources, oxygen or fluoride atoms from the dopant source are incorporated into the perovskite crystal lattice.

A device for detecting neutrons with gamma discrimination and/or gamma radiation includes a first semiconductor layer, a second semiconductor layer, an electron separator layer between the first semiconductor device and the second semiconductor device, and a gadolinium-containing layer between the first semiconductor layer and the second semiconductor layer.

A device for detecting neutrons with gamma discrimination and/or gamma radiation includes a first semiconductor layer, a second semiconductor layer, an electron separator layer between the first semiconductor device and the second semiconductor device, and a gadolinium-containing layer between the first semiconductor layer and the second semiconductor layer.

Photodiodes and nuclear batteries may utilize actinide oxides, such a uranium oxide. An actinide oxide photodiode may include a first actinide oxide layer and a second actinide oxide layer deposited on the first actinide oxide layer. The first actinide oxide layer may be n-doped or p-doped. The second actinide oxide layer may be p-doped when the first actinide oxide layer is n-doped, and the second actinide oxide layer may be n-doped when the first actinide oxide layer is p-doped. The first actinide oxide layer and the second actinide oxide layer may form a p/n junction therebetween. Photodiodes including actinide oxides are better light absorbers, can be used in thinner films, and are more thermally stable than silicon, germanium, and gallium arsenide.

Radiation detecting-structures and fabrications methods thereof are presented. The methods include, for instance: providing a substrate, the substrate including at least one trench extending into the substrate from an upper surface thereof; and epitaxially forming a radiation-responsive semiconductor material layer from one or more sidewalls of the at least one trench of the substrate, the radiation-responsive semiconductor material layer responding to incident radiation by generating charge carriers therein. In one embodiment, the sidewalls of the at least one trench of the substrate include a (111) surface of the substrate, which facilitates epitaxially forming the radiation-responsive semiconductor material layer. In another embodiment, the radiation-responsive semiconductor material layer includes hexagonal boron nitride, and the epitaxially forming includes providing the hexagonal boron nitride with an a-axis aligned parallel to the sidewalls of the trench.